IS21I Search Results

Contextual Info: BGA622 1.4 - 6 GHz SiGe LNA ES: NOW WS DS M 1 26.04.2002 Page 1 Vcc = 2.7V, Symbol IS21I2 NF P-1dB IIP3 Id MP: 05/02 Features SOT343 Applications 50Ω matched - no external components required NE W MMIC UMTS / CDMA • GSM / TDMA / EDGE • GPS / ISM • Bluetooth

Contextual Info: SIEMENS Si-M M IC-Am plifier BGA 425 in SIEGET 25-Technologie Preliminary data • Multifunctional ease. 50 Cl block LNA / MIX • Unconditionally stable • Gain IS2-|I2 = 18.5 dB at 1.8 GHz (appl.1) gain IS21I2 = 22 dB at 1.8 GHz (appl.2) /p3out = +7 dBm at 1 8 GHz ( ^D=3V,/D=9.5mA)

BTS 132 SMD

Contextual Info: PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package

XPOSYS

Abstract: gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb
Contextual Info: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

Siemens DIODE E 1240

Abstract: AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor
Contextual Info: S IE M E N S SIEGET 25 BFP420 NPN Silicon RF Transistor • • • • • • For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.05 dB at 1.8 GHz Outstanding Gms = 20 dB at 1.8 GHz Transition Frequency 1j = 25 GHz Gold metalization for high reliability

Contextual Info: SIE M E N S BGA318 Silicon Bipolar MMIC-Amplifier Preliminary Data • • • • • Cascadable 50 Q-Gain Block 16 dB typical Gain at 1.0 GH2 12 dBm typical P.1dB at 1.0 GHz 3 dB-Bandwidth: DC to 1.2 GHz Plastic Package Type Marking Ordering Code 8-mm taped

SIEMENS BFP405

Abstract: marking A06 transistor A06
Contextual Info: SIEMENS SIEGET 25 BFP405 NPN Silicon RF Transistor • • • • • • For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 22 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability

Contextual Info: Silicon Bipolar Cascadable Amplifiers Headline (Headline) Features Ceramic Microstrip Case Style Outlines 1, 2, 3 • • • • • • Available in short lead version as MA4TD0436. SBU_f.pub 4-page data sheet 3 dB Bandwidth: DC to 3.0 GHz 9.0 dB Typical Gain @ 1.0 GHz

PD57045S

Abstract: 700B AN1294 PD57045
Contextual Info: PD57045 PD57045S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD57045 is a common source N-Channel,

2SC4864

Abstract: sanyo lc 15011 ZS22 ic 3586
Contextual Info: Ordering number : EN 4 5 8 3 SAÊYO i No.4583 _ 2SC4864 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications Features • Low noise : NF = l.ldB typ f=lGHz •High gain: I S21e I 2= lldB typ (f= 1GHz)

CQ 817

Abstract: cq 0765 TRANSISTOR cq 817 ic 4580 2SC4860
Contextual Info: Ordering number: E N 4 5 8 0 2SC4860 No.4580 NPN E pitaxial P lan ar Silicon Transistor SA\YO UHF Converter, Local Oscillator Applications i F e a tu r e s • H igh cutoff frequency :fT = 6.5GHztyp. * H igh gain : I S21e l2= 11.5dB typ f= 1GHz . •Sm all Cob : N F = 0.65pF typ.

AN1294

Abstract: PD57002 PD57002S BTS 472 E 0927 TRANSISTOR
Contextual Info: PD57002 PD57002S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 15 dB gain @ 960 MHz / 28 V • NEW RF PLASTIC PACKAGE PowerSO-10RF

AN1294

Abstract: PD55008 PD55008S 11 0741
Contextual Info: PD55008 PD55008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE DESCRIPTION

MARKING CODE 13t sot363

Abstract: A03 MMIC mmic a03 sot363 13t mh 7400 marking 8019 7476 7476 PIN DIAGRAM dbl 8466 amplifier siemens
Contextual Info: SIEMENS BGA425 S i-M M IC -A m p lifier in SIEGET 25-Technology Prelim inary Data # # # # # # # M ultifunctional Case. 50 £2 Block LNA/M IX Unconditionally stable Gain |s21f =18.5 dB at 1.8 GHz (appl.1) Gain |s 21|2=22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (V D= 3 V ,lD=9.5m A)

transistor C640

Abstract: transistor bf 179 transistor c640 npn START499 START499TR ST 7 L05 RF NPN power transistor 2.5GHz Ko 368
Contextual Info: START499 NPN Silicon RF Transistor • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START499TR DESCRIPTION START499 is a product of the START family that

Contextual Info: Thai H E W L E T T mLKM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0520 Features • C ascadable 5 0 Q Gain B lock • High O utput Power: +23 dBm Typical Pj dB at 1.0 GHz • Low D istortion : 33 dBm Typical IP3 at 1.0 GHz

J-STD-020B

Abstract: PD55003L
Contextual Info: PD55003L RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION

Contextual Info: ATA12001D1C AGC Transimpedance Amplifier SONET OC-24 Preliminary Eferm gcs* Your GaAs 1C Source Rev 3 FEATURES APPLICATIONS • Single +5 Volt Supply ■ SONET OC-24 Receiver ■ Automatic Gain Control ■ Low Noise RF Amplifier ■ Excellent Sensitivity ■ BISDN

Contextual Info: data sheet O avantek MGA-66100 2-6 GHz Cascadable GaAs MMIC Amplifier December, 1989 Avantek Chip Outline Features • • • • Cascadable 50 Q Gain Block Broadband Performance: 2-6 GHz 12.5 dB typical Gain + 1.0 dB Gain Flatness 13.0 dBm Pi dB Single Supply Bias

Contextual Info: » i emveir P roduct S p ec ifica tio n s M a y 1994 1 CFC0301 Series Medium Power GaAs FETs of 2 Features □ High Gain □ +23 dBm Power Output □ Ion Implanted Material □ 100 Mil Stripline Flange Package C Package Diagram 1.6 *0.1 DIA 0.6 - 1.0 2.5 MAX

plate capacitor

Abstract: 8038 block diagram
Contextual Info: 4 I9 Ö S E M I C O N D U C T O R I N C TOSÌÌ I R E L E S S C O M M U N I C A T I O N S TQ9111 Block Diagram 0.3 0.1 V D D V D D ID S S ID S S 1 2 1 -8 GHz Amplifier RF GND1 RF RF RF GND2 GND3 GND4 Product Description Features The TQ9111 is a general-purpose cascadable

TQ9121F

Abstract: circuit diagram of wireless system
Contextual Info: WIRELESS COMMUNICATIONS TQ9121F Block Diagram Low-Noise Amplifier 6 OUT Features Product Description The TQ9121 Low-Noise Amplifier is part of TriQuinfs MMIC Downconverter Building Block family. Intended for use in the first stages of a Low-Noise Receiver front end, the

2493 transistor

Abstract: marking 9721 IC 7109
Contextual Info: TO SH IBA MT3S04AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.2 dB at f = 1 GHz TT irrV » fio in JJlg ll V ^ U lll

945 TRANSISTOR

Abstract: 700B AN1294 PD57018 PD57018S
Contextual Info: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE