IS22I Search Results

Contextual Info: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA4000F VHF-UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Band W id th 700MHz M in. @ 3 dB dow n • Low Noise 4dB (Typ.) @ f = 400MHz • Small Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

BTS 132 SMD

Contextual Info: PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package

PD57045S

Abstract: 700B AN1294 PD57045
Contextual Info: PD57045 PD57045S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD57045 is a common source N-Channel,

2SC4864

Abstract: sanyo lc 15011 ZS22 ic 3586
Contextual Info: Ordering number : EN 4 5 8 3 SAÊYO i No.4583 _ 2SC4864 NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amp Applications Features • Low noise : NF = l.ldB typ f=lGHz •High gain: I S21e I 2= lldB typ (f= 1GHz)

CQ 817

Abstract: cq 0765 TRANSISTOR cq 817 ic 4580 2SC4860
Contextual Info: Ordering number: E N 4 5 8 0 2SC4860 No.4580 NPN E pitaxial P lan ar Silicon Transistor SA\YO UHF Converter, Local Oscillator Applications i F e a tu r e s • H igh cutoff frequency :fT = 6.5GHztyp. * H igh gain : I S21e l2= 11.5dB typ f= 1GHz . •Sm all Cob : N F = 0.65pF typ.

AN1294

Abstract: PD57002 PD57002S BTS 472 E 0927 TRANSISTOR
Contextual Info: PD57002 PD57002S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 15 dB gain @ 960 MHz / 28 V • NEW RF PLASTIC PACKAGE PowerSO-10RF

AN1294

Abstract: PD55008 PD55008S 11 0741
Contextual Info: PD55008 PD55008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE DESCRIPTION

transistor C640

Abstract: transistor bf 179 transistor c640 npn START499 START499TR ST 7 L05 RF NPN power transistor 2.5GHz Ko 368
Contextual Info: START499 NPN Silicon RF Transistor • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START499TR DESCRIPTION START499 is a product of the START family that

J-STD-020B

Abstract: PD55003L
Contextual Info: PD55003L RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION

plate capacitor

Abstract: 8038 block diagram
Contextual Info: 4 I9 Ö S E M I C O N D U C T O R I N C TOSÌÌ I R E L E S S C O M M U N I C A T I O N S TQ9111 Block Diagram 0.3 0.1 V D D V D D ID S S ID S S 1 2 1 -8 GHz Amplifier RF GND1 RF RF RF GND2 GND3 GND4 Product Description Features The TQ9111 is a general-purpose cascadable

TQ9121F

Abstract: circuit diagram of wireless system
Contextual Info: WIRELESS COMMUNICATIONS TQ9121F Block Diagram Low-Noise Amplifier 6 OUT Features Product Description The TQ9121 Low-Noise Amplifier is part of TriQuinfs MMIC Downconverter Building Block family. Intended for use in the first stages of a Low-Noise Receiver front end, the

945 TRANSISTOR

Abstract: 700B AN1294 PD57018 PD57018S
Contextual Info: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

AN0010

Abstract: AN0017 CHA2069-QDG MO-220 RO4003 ro4003 rogers microstrip
Contextual Info: CHA2069-QDG RoHS COMPLIANT 18-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2069-QDG is a three-stage selfbiased wide band monolithic low noise amplifier. Typical applications range from telecommunication point to point, point to multipoint, VSAT to ISM and military markets.

PD57002-E

Abstract: BTS 132 SMD PD57002S PD57002S-E AN1294 JESD97 PD57002
Contextual Info: PD57002-E PD57002S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 2W with 15dB gain @ 960MHz / 28V ■ New RF plastic package

BF295

Abstract: c785 C785 transistor BF 295 transistor BF 451 START450 START450TR transistor C740
Contextual Info: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that

AN1294

Abstract: PD57006 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E
Contextual Info: PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 6W with 15dB gain @ 945MHz / 28V ■ New RF plastic package

transistor smd po3

Abstract: PD55003 AN1294 PD55003S
Contextual Info: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

A2069

Abstract: AN0017 CHA2069-QDG MO-220
Contextual Info: CHA2069-QDG RoHS COMPLIANT 18-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2069-QDG is a three-stage self-biased wide band monolithic low noise amplifier. Typical applications range from telecommunication point to point, point to multipoint, VSAT to ISM and military markets.

SL2128

Abstract: MRF965 MRF961 BFRC96 case 317-01
Contextual Info: MOTOROLA SC XSTRS/R F 4bE b3b7HS4 D 00=14173 b • MOTOROLA SEMICONDUCTOR TECHNICAL DATA BFR96 BFRC96 MRF961 MRF962 MRF965 T h e R F L in e NPN SILICO N H IG H FREQ UENCY TRANSISTORS The B FR 96 series transistors use the same state-of-the-art m icro ­

jis z 0237

Abstract: l 0734 HP11590B
Contextual Info: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1, T3 NPN Silicon High-Frequency TVansistors M o to r o la P r e fe r r e d D e v ic e s Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz

shock vk200

Abstract: marking c7 sot-23 MMBFU310LT1
Contextual Info: MOTOROLA Order this document by MMBFU310LT1/D SEMICONDUCTOR TECHNICAL DATA JFET "Transistor N-Channel 2 SOURCE M MBFU310LT1 Motorola Preferred Device MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Vd S 25 Vdc Gate-Source Voltage vgs 25 Vdc Ig 10 mAdc

SU 179 transistor

Contextual Info: MOTOROLA O rder this docum ent by M RF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N-Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N -C H A N N E L BROADBAND RF POW ER M OSFET Designed for broadband commercial and military applications up to 200 MHz

Nippon capacitors

Contextual Info: MOTOROLA Order this document by MRFIC2401/D SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC2401 2.4 GHz GaAs D ow nconverter The MRFIC2401 is a GaAs low-noise amplifier and downmixer in a low-cost 16 lead plastic package designed for use in the 2.4 to 2.5 GHz IndustrialScientific-Medical ISM band. The design is optimized for efficiency at 5.0 Volt

johanson trim

Contextual Info: MOTOROLA O rder this docum ent by M RF160/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N-Channel Enhancement-Mode MOSFET D e s ig n e d p rim a rily fo r w id e b a n d la r g e -s ig n a l o u tp u t an d d riv e r fro m