ISD 1700 Search Results

isd1700 design guide

Abstract: ISD1730 ISD1720 ISD1700 ISD1760 ISD17120 design guide ISD17240 isd1730 design guide SPIISD1700SPI ISD1790
Contextual Info: ISD 1700 系列数码语音电路 使用手册 （中文版） WWW.ATVOC.COM 中青世纪 http://www.atvoc.com 前 言 ISD1700 系列是华邦公司新推出的语音芯片，用来替代已经 停产的 ISD1400 系列及 ISD2500 系列芯片。ISD1700 系列不仅在

STW3N170

Abstract: stfw3n170 N-channel MOSFET to-247
Contextual Info: STFW3N170, STW3N170 N-channel 1700 V, 8 Ω typ., 2.3 A, PowerMESH Power MOSFET in TO-3FP and TO-247 packages Datasheet − preliminary data Features VDSS RDS on max ID 1700 V 12 Ω 2.3 A Order codes STFW3N170 STW3N170 1 3 2 • Intrinsic capacitances and Qg minimized

100A 1000V mosfet

Contextual Info: APTMC170AM30CT1AG VDSS = 1700V RDSon = 30mΩ max @ Tj = 25°C ID = 106A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET

Contextual Info: APTMC170AM60CT1AG VDSS = 1700V RDSon = 60mΩ max @ Tj = 25°C ID = 53A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET

Contextual Info: PRECISION TEMPERATURE CALIBRATOR WITH PRESSURE OPTION MODEL CLB CLB 3590 $ Model Shown Temperature Calibrator CLB $3590 Shown with optional CLB-PM-602-602 Pressure module ($1595) ߜ Calibration Lab in a Nutshell ߜ Rotatable Control Panel ߜ Reads Input and

irf440

Contextual Info: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t

LTC1619

Abstract: becker automotive ltc1680 LT1945 LTC1867 str 6753 data sheet str 6753 LTC1871 LTC3703 LT1786F
Contextual Info: 04.2006 オートモーティブ・エレクトロニクス・ソリューション ハイパフォーマンス・アナログ IC 昨今のオートモーティブ車載環境は高い入力電圧を受ける能力、広い動作温度範囲、効率の高

Contextual Info: STP12NK60Z STF12NK60Z N-CHANNEL 600V - 0.53Ω - 10A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET PRODUCT PREVIEW Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STP12NK60Z STF12NK60Z 600 V 600 V < 0.64 Ω < 0.64 Ω 10 A 10 A

smps 24v 10a

Abstract: DIODE 76A 24V 10A SMPS 035H IRFPE30 MJ6000
Contextual Info: PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l Lead-Free VDSS RDS on max ID 30V 0.0028Ω 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

Contextual Info: PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l Lead-Free VDSS RDS on max ID 30V 0.0028Ω 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N100 Preliminary Power MOSFET 9A, 1000V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N100 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state

9N100

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9N100 Preliminary Power MOSFET 9A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N100 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 9N100 Preliminary Power MOSFET 9 A, 1 0 0 0 V N -CH AN N EL POWER M OSFET ̈ DESCRI PT I ON The UTC 9N100 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state

24V 10A SMPS

Abstract: DIODE 76A IRFP3703PbF 035H IRFPE30 SMPS 24V irfp3703
Contextual Info: PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l Lead-Free VDSS RDS on max ID 30V 0.0028Ω 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

IRLZ44N equivalent

Abstract: IRLZ44N isd 1700
Contextual Info: PD - 95456 IRLIZ44NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V

STR 6753

Abstract: data sheet str 6753 RF3103 7805 12v to 5v 3a High Current Voltage Regulator mosfet 7805 TM 1628 driver display inverter STR 6753 LTC1964 7805 12v to 5v 1a 7805 IC
Contextual Info: Power Management & Wireless Solutions Power Management & Wireless Solutions ▼ Introduction Today’s handheld products require extremely small and low profile power management solutions. Consumers expect long battery life, so maximum efficiency is essential. And sensitive wireless receivers in close proximity to switching regulators pose potential

STD35NF06L

Contextual Info: STD35NF06L N-CHANNEL 60V - 0.014Ω - 35A DPAK STripFET II MOSFET PRELIMINARY DATA TYPE STD35NF06L • ■ ■ ■ ■ VDSS RDS on ID 60 V < 0.017 Ω 35 A TYPICAL RDS(on) = 0.014 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK

STD35NF06L

Contextual Info: STD35NF06L N-CHANNEL 60V - 0.014Ω - 35A DPAK STripFET II MOSFET PRELIMINARY DATA TYPE STD35NF06L • ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.017 Ω 35 A TYPICAL RDS(on) = 0.014 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK

d35nf06l

Abstract: STD35NF06L STD35NF06LT4 isd 1700 isd 1700 application D35NF
Contextual Info: STD35NF06L N-CHANNEL 60V - 0.014 Ω - 35A DPAK STripFET II POWER MOSFET TYPE STD35NF06L • ■ ■ ■ VDSS RDS on ID 60 V < 0.017 Ω 35 A TYPICAL RDS(on) = 0.014 Ω LOW THRESHOLD DRIVE GATE CHARGE MINIMIZED SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL

Contextual Info: IRFI540G Power MOSFET FEATURES D TO-220 FULLPAK • Isolated Package • High Voltage Isolation = 2.5 kVRMS t = 60 s; f = 60 Hz • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance

LTC1619

Abstract: STR 6753 LT3406 data sheet str 6753 LT1172 boost converter 60v 7805 LDO LT1170 boost converter 12v dc LT3406B-2 LT3406B LTC2602
Contextual Info: 03.2005 Automotive Electronics Solutions High Performance Analog ICs Linear Technology Automotive Awards Today’s automotive environment demands high input voltage capability, wide operating temperature ranges and efficient thermal management. Consumer expectations and

STP80NF03L-04

Abstract: airbag
Contextual Info: STP80NF03L-04 N-CHANNEL 30V - 0.0035 Ω - 80A TO-220 STripFET POWER MOSFET PRELIMINARY DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STP80NF03L-04 30 V <0.004 Ω 80 A TYPICAL RDS(on) = 0.0035Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE

Contextual Info: PD - 94971 IRF3703PbF SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l VDSS RDS on max ID 30V 2.8mΩ 210A† Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

P12NK60Z

Abstract: 0409 06 027 053 P12NK60 P12NK f12nk
Contextual Info: STP12NK60Z STF12NK60Z N-CHANNEL 600V - 0.53Ω - 10A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET PRODUCT PREVIEW Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STP12NK60Z STF12NK60Z 600 V 600 V < 0.64 Ω < 0.64 Ω 10 A 10 A 140 W