ISD 1700 APPLICATION Search Results

HUF75637SMD05

Abstract: HUF75637SMD05R SMD05
Contextual Info: HUF75637SMD05R HUF75637SMD05R MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 3 .1 7 5 (0 .1 2 5 ) M a x . 2 .4 1 (0 .0 9 5 ) 3 .0 5 (0 .1 2 0 ) 0 .1 2 7 (0 .0 0 5 )

HUF75637SMD05

Abstract: HUF75637SMD05R SMD05
Contextual Info: HUF75637SMD05R HUF75637SMD05R MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 3 .1 7 5 (0 .1 2 5 ) M a x . 2 .4 1 (0 .0 9 5 ) 3 .0 5 (0 .1 2 0 ) 0 .1 2 7 (0 .0 0 5 )

STW3N170

Abstract: stfw3n170 N-channel MOSFET to-247
Contextual Info: STFW3N170, STW3N170 N-channel 1700 V, 8 Ω typ., 2.3 A, PowerMESH Power MOSFET in TO-3FP and TO-247 packages Datasheet − preliminary data Features VDSS RDS on max ID 1700 V 12 Ω 2.3 A Order codes STFW3N170 STW3N170 1 3 2 • Intrinsic capacitances and Qg minimized

Contextual Info: APTMC170AM60CT1AG VDSS = 1700V RDSon = 60mΩ max @ Tj = 25°C ID = 53A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET

100A 1000V mosfet

Contextual Info: APTMC170AM30CT1AG VDSS = 1700V RDSon = 30mΩ max @ Tj = 25°C ID = 106A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET

STB55NF06L

Contextual Info: STP16NF06L N-CHANNEL 60V - 0.014 Ω - 55A D2PAK STripFET II POWER MOSFET TYPE STB55NF06L • ■ ■ ■ VDSS RDS on ID 60 V <0.018 Ω 55 A TYPICAL RDS(on) = 0.014 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

smps 24v 10a

Abstract: DIODE 76A 24V 10A SMPS 035H IRFPE30 MJ6000
Contextual Info: PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l Lead-Free VDSS RDS on max ID 30V 0.0028Ω 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

Contextual Info: PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l Lead-Free VDSS RDS on max ID 30V 0.0028Ω 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

24V 10A SMPS

Abstract: DIODE 76A IRFP3703PbF 035H IRFPE30 SMPS 24V irfp3703
Contextual Info: PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l Lead-Free VDSS RDS on max ID 30V 0.0028Ω 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

24V 10A SMPS

Abstract: IRFBL3703 DIODE 76A ISD76A
Contextual Info: PD - 93841 IRFBL3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification in High Power High Frequency DC/DC Converters VDSS RDS on max ID 30V 0.0025Ω 260A† Benefits >1mm lower profile than D2Pak Same footprint as D2Pak Low Gate Impedance to Reduce Switching

Contextual Info: PD - 94971 IRF3703PbF SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l VDSS RDS on max ID 30V 2.8m! 210A† Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

DIODE 76A

Contextual Info: PD - 94971 IRF3703PbF SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l VDSS RDS on max ID 30V 2.8mΩ 210A† Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

Contextual Info: PD - 94971 IRF3703PbF SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing l VDSS RDS on max ID 30V 2.8mΩ 210A† Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

IRF3703

Abstract: 24V 10A SMPS
Contextual Info: PD - 93918 IRF3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing VDSS RDS on max ID 30V 2.8mΩ 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-220AB

IRFP3703

Contextual Info: PD - 93917A IRFP3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing VDSS RDS on max ID 30V 0.0028Ω 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

Contextual Info: PD - 93918 IRF3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing VDSS RDS on max ID 30V 2.8mΩ 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-220AB

IRFP3703

Abstract: 5000d
Contextual Info: PD - 93917A IRFP3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing VDSS RDS on max ID 30V 0.0028Ω 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

irf3703

Contextual Info: PD - 93918 IRF3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing VDSS RDS on max ID 30V 2.8mΩ 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-220AB

Contextual Info: PD - 93917A IRFP3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing VDSS RDS on max ID 30V 0.0028Ω 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

24V 10A SMPS

Abstract: IRFP3703
Contextual Info: PD - 93917 IRFP3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing VDSS RDS on max ID 30V 0.0028Ω 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

7662

Contextual Info: STD35NF06L N-channel 60 V, 0.014 Ω, 35 A STripFET II Power MOSFET in a DPAK package Datasheet — production data Features Order code VDSS RDS on ID STD35NF06LT4 60V <0.017Ω 35A • Low threshold drive ■ Gate charge minimized TAB 3 1 Applications ■

D35NF06L

Contextual Info: STD35NF06L N-channel 60 V, 0.014 Ω, 35 A STripFET II Power MOSFET in a DPAK package Datasheet — production data Features Order code VDSS RDS on ID STD35NF06LT4 60V <0.017Ω 35A • Low threshold drive ■ Gate charge minimized TAB 3 1 Applications ■

Contextual Info: TQP3M9037 Ultra Low Noise, High Linearity LNA Applications • • • • • Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems 8 pin 2x2 mm DFN Package Product Features • • • • • • • • •

H-bridge Mosfet

Abstract: SPM4M28-10
Contextual Info: SENSITRON SEMICONDUCTOR SPM4M28-10 DATA SHEET, 685, REV. A Hermetic H-Bridge MOSFET Module With Gate Driver 100V, 28A Description: œThis power module is suited for high reliability switching applications such as motion control, UPS systems, induction heating, and DC/DC and DC/AC switch mode power supplies. Both the gate drivers