ISD 2040 Search Results

ISD-9200

Abstract: ISD-9201
Contextual Info: ISD-9200 Series SPDT Balanced Pin Diode Switches with Integral Drivers ISOLATION vs. FREQUENCY INSERTION LOSS vs. FREQUENCY 3.0 70 2 3 4 5 60 2.5 50 VSWR ISOLATION (dB) 1 LOSS (dB) VSWR vs. FREQUENCY 40 30 20 1.5 10 0.5 5 50 500 1.0 0.5 5 Transient Feedthrough

isd 2100

Contextual Info: ISD-9900 Series SPST Balanced Pin Diode Switches with Integral Drivers ISOLATION vs. FREQUENCY INSERTION LOSS vs. FREQUENCY 3.0 70 2 3 4 5 60 2.5 50 VSWR ISOLATION (dB) 1 LOSS (dB) VSWR vs. FREQUENCY 40 30 20 1.5 10 0.5 5 50 500 1.0 0.5 5 Transient Feedthrough

ISD-9110

Abstract: ISD-9111 ISD-9112
Contextual Info: ISD-9110 Series SPST Balanced Pin Diode Switches with Integral Drivers ISOLATION vs. FREQUENCY INSERTION LOSS vs. FREQUENCY 3.0 70 2 3 4 5 60 2.5 50 VSWR ISOLATION (dB) 1 LOSS (dB) VSWR vs. FREQUENCY 40 30 20 1.5 10 0.5 5 50 500 1.0 0.5 5 Transient Feedthrough

LTC1619

Abstract: becker automotive ltc1680 LT1945 LTC1867 str 6753 data sheet str 6753 LTC1871 LTC3703 LT1786F
Contextual Info: 04.2006 オートモーティブ・エレクトロニクス・ソリューション ハイパフォーマンス・アナログ IC 昨今のオートモーティブ車載環境は高い入力電圧を受ける能力、広い動作温度範囲、効率の高

Contextual Info: PD - 94213A IRFP254N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 125mΩ G ID = 23A

STR 6753

Abstract: data sheet str 6753 RF3103 7805 12v to 5v 3a High Current Voltage Regulator mosfet 7805 TM 1628 driver display inverter STR 6753 LTC1964 7805 12v to 5v 1a 7805 IC
Contextual Info: Power Management & Wireless Solutions Power Management & Wireless Solutions ▼ Introduction Today’s handheld products require extremely small and low profile power management solutions. Consumers expect long battery life, so maximum efficiency is essential. And sensitive wireless receivers in close proximity to switching regulators pose potential

LTC1619

Abstract: STR 6753 LT3406 data sheet str 6753 LT1172 boost converter 60v 7805 LDO LT1170 boost converter 12v dc LT3406B-2 LT3406B LTC2602
Contextual Info: 03.2005 Automotive Electronics Solutions High Performance Analog ICs Linear Technology Automotive Awards Today’s automotive environment demands high input voltage capability, wide operating temperature ranges and efficient thermal management. Consumer expectations and

035H

Abstract: IRFPE30
Contextual Info: PD - 95041 IRFP254NPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 125mΩ

IRFP254N

Abstract: 035H IRFPE30
Contextual Info: PD - 94213 IRFP254N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 125mΩ G ID = 23A

Contextual Info: PD - 94213A IRFP254N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 125mΩ G ID = 23A

IRFP254N

Contextual Info: IRFP254N, SiHFP254N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.125 Qg (Max.) (nC) 100 Qgs (nC) 17 Qgd (nC) 44 Configuration Single D Advanced Process Technology Dynamic dV/dt Rating

IRFP254N

Abstract: 035H IRFPE30
Contextual Info: PD - 94213A IRFP254N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 125mΩ G ID = 23A

IRF (10A) 55V

Abstract: AN-994 IRFR2405 IRFU120 IRFU2405 R120 U120 IRFU2405PBF
Contextual Info: PD - 95369A IRFR2405PbF IRFU2405PbF Surface Mount IRFR2405 l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.016Ω

IRFP254N

Contextual Info: IRFP254N, SiHFP254N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.125 Qg (Max.) (nC) 100 Qgs (nC) 17 Qgd (nC) 44 Configuration Single D Advanced Process Technology Dynamic dV/dt Rating

Contextual Info: PD - 95369A IRFR2405PbF IRFU2405PbF Surface Mount IRFR2405 l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.016Ω

IRF 260 N

Abstract: rectifier diode assembly diode 1600 rectifier HEXFET Power MOSFET IRF (10A) 55V IRF (10A) 55V P IRF N-Channel Power MOSFETs AN-994 IRFR2405 IRFU120
Contextual Info: PD - 95369A IRFR2405PbF IRFU2405PbF Surface Mount IRFR2405 l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.016Ω

Contextual Info: IRFP254N, SiHFP254N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.125 Qg (Max.) (nC) 100 Qgs (nC) 17 Qgd (nC) 44 Configuration Single D Advanced Process Technology Dynamic dV/dt Rating

035H

Abstract: IRFPE30
Contextual Info: PD - 95041 IRFP254NPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 125mΩ

Contextual Info: PD - 95369 IRFR2405PbF IRFU2405PbF Surface Mount IRFR2405 l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.016Ω

Contextual Info: PD - 97688 AUTOMOTIVE GRADE AUIRFR2405 HEXFET Power MOSFET Features l ● l l l l l l l Advanced Planar Technology Dynamic dV/dT Rating Low On-Resistance 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allow ed up to Tjmax

Contextual Info: IRFR2405 IRFU2405 D-Pak IRFR2405 l l l l l l I-Pak IRFU2405 Surface Mount IRFR2405 Straight Lead (IRFU2405) Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated D Description VDSS = 55V The D-Pak is designed for surface mounting using

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65Z-Q Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high

10N60K

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.

Contextual Info: IRFR2405 IRFU2405 l l l l l l D-Pak IRFR2405 Surface Mount IRFR2405 Straight Lead (IRFU2405) Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated I-Pak IRFU2405 Description The D-Pak is designed for surface mounting using