ISD 2210 Search Results

ISD 2210

Contextual Info: ZETEX SEMICONDUCTORS TSD D Bi T'ïVOSTÔ D O O S b ? ? 2 MZETB 95D 0 5 6 7 7 T '3 ? '0 ? ZV N 2210 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

ZVP 210

Abstract: ZVP2210B zetex zvp ZVP P-channel
Contextual Info: ZE TE X S E M I C O N D U C T O R S I S » TTTGSTÖ OODSÖCH 4 « Z E T B D = P-channel enhancement mode vertical DMOS FET 95D 0 5 8 0 9 T '3 7 -ss ZVP 2210 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

6790

Abstract: MOSFET 50V 100A IRFPS3810PBF
Contextual Info: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A†

IRFB16N50KPBF

Contextual Info: PD - 95619 SMPS MOSFET IRFB16N50KPbF Applications HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Lead-Free l l l l l VDSS RDS(on) typ. 285m: 500V ID 17A

IRFPS3810

Contextual Info: PD - 93912A IRFPS3810 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.009Ω G ID = 170A† S Description

Contextual Info: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A†

22mH 400v inductor

Abstract: IRFB16N50K TO-220aB DIODE 11A
Contextual Info: PD - 95855A IRFB16N50K SMPS MOSFET Applications HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits l l l l VDSS RDS(on) typ. 285m: 500V Benefits Low Gate Charge Qg results in Simple Drive

Contextual Info: PD - 95703 IRFPS3810PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 0.009Ω G ID = 170A†

6790

Abstract: TO274 IRFPS3810 TO-274
Contextual Info: PD - 93912B IRFPS3810 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.009Ω G ID = 170A† S Description

Contextual Info: PD - 93912B IRFPS3810 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.009Ω G ID = 170A† S Description

IRFB16N50K

Contextual Info: PD - 95855 IRFB16N50K SMPS MOSFET Applications HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits l l l l VDSS RDS(on) typ. 285m: 500V Benefits Low Gate Charge Qg results in Simple Drive

IRFB16N50K

Abstract: SiHFB16N50K SiHFB16N50K-E3
Contextual Info: IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.285 Qg (Max.) (nC) 89 Qgs (nC) 27 Qgd (nC) 43 Configuration Available RoHS* • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT

IRFB16N50K

Abstract: SiHFB16N50K SiHFB16N50K-E3
Contextual Info: IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.285 Qg (Max.) (nC) 89 Qgs (nC) 27 Qgd (nC) 43 Configuration Available RoHS* • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT

Contextual Info: IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.285 Qg (Max.) (nC) 89 Qgs (nC) 27 Qgd (nC) 43 Configuration Available RoHS* • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT

Contextual Info: PD - 95619 SMPS MOSFET IRFB16N50KPbF Applications l l l l l HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Lead-Free VDSS RDS(on) typ. 285m: 500V ID 17A

Contextual Info: PD - 95855A IRFB16N50K SMPS MOSFET Applications l l l l HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits VDSS RDS(on) typ. 285m: 500V Benefits l l l l Low Gate Charge Qg results in Simple Drive

Contextual Info: PD - 95619 SMPS MOSFET IRFB16N50KPbF Applications l l l l l HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Lead-Free VDSS RDS(on) typ. 285m: 500V ID 17A

Contextual Info: PD - 94436A IRF2804 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 2.3mΩ

IRF2804

Abstract: MOSFET driver 175C
Contextual Info: PD - 94436B IRF2804 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 2.3mΩ

Contextual Info: PD - 94495A IRF2804S IRF2804L HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 2.5mΩ G Description Specifically designed for Automotive applications,

STL30NF3LL

Contextual Info: STL30NF3LL N-CHANNEL 30V - 0.008Ω - 30A PowerFLAT LOW GATE CHARGE STripFET MOSFET PRELIMINARY DATA • ■ ■ TYPE VDSS RDS on ID STL30NF3LL 30 V < 0.010 Ω 30 A TYPICAL RDS(on) = 0.008Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE

STL30NF3LL

Contextual Info: STL30NF3LL N-CHANNEL 30V - 0.008Ω - 30A PowerFLAT LOW GATE CHARGE STripFET™ MOSFET PRELIMINARY DATA • ■ ■ TYPE VDSS RDS on ID STL30NF3LL 30 V < 0.010 Ω 30 A TYPICAL RDS(on) = 0.008Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE

stl30nf3ll

Contextual Info: STL30NF3LL N-CHANNEL 30V - 0.006Ω - 30A PowerFLAT LOW GATE CHARGE STripFET MOSFET PRELIMINARY DATA TYPE VDSS R DS on ID STL30NF3LL 30 V < 0.008 Ω 30 A • ■ ■ TYPICAL RDS(on) = 0.006Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE

IRF2804L

Abstract: IRF2804S
Contextual Info: PD - 94495B IRF2804S IRF2804L HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 2.5mΩ G Description Specifically designed for Automotive applications,