ISD 2530 Search Results
ISD 2530 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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P82530 |
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P82530 - Multi Protocol Controller, 2 Channel(s), 0.125MBps, NMOS, PDIP40 |
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P82530-6 |
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P82530 - Multi Protocol Controller, 2 Channel(s), 0.1875MBps, NMOS, PDIP40 |
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D82530-6 |
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82530 - Multi Protocol Controller, 2 Channel(s), 0.1875MBps, NMOS, CDIP40 |
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TP82530-6 |
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82530 - Serial Communication Controller |
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CC2530F128RHAR |
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Second Generation System-on-Chip Solution for 2.4 GHz IEEE 802.15.4 / RF4CE / ZigBee 40-VQFN -40 to 125 |
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ISD 2530 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: _ea_ Section A-A Echao rffnia_r r ô — 1— ^p - R 0,3 « l| ^— X _ 13,94 1 _ 1,2 1 20,32 1 . 1,8 > DESCRIPTION C o n n e c t o r e s p e c ia lly d e s ig n e d f o r SMT "te ch n o lo g y EMV co m p a tib le a n d in a c c o r d a n c e w ith ISD 78 1 6 -2 |
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isd 2530
Abstract: isd1800 ISD1810 ISD ChipCorder Application Information ISD DIGITAL CHIPCORDER chipcorder isd chipcorder application notes ISD1810P ISD1810X INFORMATION STORAGE DEVICES
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ISD1810 16-Second ISD1810 2200898D1510 isd 2530 isd1800 ISD ChipCorder Application Information ISD DIGITAL CHIPCORDER chipcorder isd chipcorder application notes ISD1810P ISD1810X INFORMATION STORAGE DEVICES | |
ISD ChipCorder Application Information
Abstract: ISD1810 ISD1810X chipcorder ISD1800 ISD1810P 40 pin record and play INFORMATION STORAGE DEVICES
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ISD1810 16-Second ISD1810 2200898D1510 ISD ChipCorder Application Information ISD1810X chipcorder ISD1800 ISD1810P 40 pin record and play INFORMATION STORAGE DEVICES | |
ISD1800
Abstract: ISD DIGITAL CHIPCORDER isd 2530 ISD ChipCorder Application Information chipcorder ISD1810 ISD1810P ISD1810X
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ISD1810 16-Second ISD1810 2200898D1510 ISD1800 ISD DIGITAL CHIPCORDER isd 2530 ISD ChipCorder Application Information chipcorder ISD1810P ISD1810X | |
11n90Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 11N90 Preliminary 11 Amps, 900 Volts N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in |
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11N90 O-220 11N90 O-220F1 QW-R502-497 | |
11n90
Abstract: isd 2530 MOSFET 900V TO-220
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11N90 11N90 QW-R502-497 isd 2530 MOSFET 900V TO-220 | |
11n90
Abstract: isd 2530
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11N90 11N90 QW-R502-497 isd 2530 | |
11N90Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 11N90 Power MOSFET 11 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in |
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11N90 11N90 QW-R502-497 | |
ISD1810SContextual Info: ADVANCED INFORMATION ISD1810 SINGLE-CHIP, SINGLE-MESSAGE VOICE RECORD/PLAYBACK DEVICE 8- TO 16-SECOND DURATIONS Advanced Information Please check with Winbond for datasheet updates -1- Publication Release Date: February 2003 Revision 0.1 ISD1810 1. GENERAL DESCRIPTION |
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ISD1810 16-SECOND ISD1810 ISD1810S | |
JESD97
Abstract: STS15N4LL
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STS15N4LL JESD97 STS15N4LL | |
JESD97
Abstract: STS15N4LLF3
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STS15N4LLF3 JESD97 STS15N4LLF3 | |
Contextual Info: STSJ80N4LL N-channel 40V - 0.0042Ω - 18A - PowerSO-8 STripFET™III Power MOSFET for DC-DC conversion General features Type VDSS RDS on ID STSJ80N4LL 40V 0.005Ω 18A(1) 1. This value is rated according to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V |
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STSJ80N4LL STSJ80N4LL | |
JESD97
Abstract: STL80N4LL
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STL80N4LL JESD97 STL80N4LL | |
Contextual Info: STL80N4LL N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LL 40V <0.005Ω 20A (1) 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec • Improved die-to-footprint ratio |
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STL80N4LL STL80N4LL | |
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JESD97
Abstract: STSJ80N4LLF3
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STSJ80N4LLF3 JESD97 STSJ80N4LLF3 | |
Contextual Info: SUN12A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =0.55Ω (Typ.) Low gate charge: Qg=38nC (Typ.) Low reverse transfer capacitance: Crss=15pF (Typ.) Lower EMI noise RoHS compliant device |
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SUN12A60F O-220F-3L SUN12A60 SDB20D45 24-JUL-14 KSD-T0O165-000 | |
ISD1800
Abstract: ISD1806 balanced electret mic preamp ISD18xx ISD ChipCorder Application Information isd chipcorder application notes 300MIL ISD1810 ISD1810S HKZ 121 E
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ISD1800 16-SECOND ISD1806 balanced electret mic preamp ISD18xx ISD ChipCorder Application Information isd chipcorder application notes 300MIL ISD1810 ISD1810S HKZ 121 E | |
Contextual Info: STS15N4LLF3 N-channel 40V - 0.0042Ω - 15A - SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS15N4LLF3 40V <0.005Ω 15A • Optimal RDS(on)x Qg trade-off @ 4.5V ■ Conduction losses reduced ■ Switching losses reduced ) s ( ct u d |
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STS15N4LLF3 | |
JESD97
Abstract: STSJ80N4LLF3
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STSJ80N4LLF3 JESD97 STSJ80N4LLF3 | |
Contextual Info: STSJ80N4LLF3 N-channel 40V - 0.0042Ω - 18A - PowerSO-8 STripFET™III Power MOSFET for DC-DC conversion General features Type VDSS RDS on ID STSJ80N4LLF3 40V 0.005Ω 18A(1) ) s ( ct 1. This value is rated according to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V |
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STSJ80N4LLF3 STSJ80N4LLF3 | |
Contextual Info: STL80N4LLF3 N-channel 40V - 0.0042Ω - 80A - PowerFLAT 6x5 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS(on) ID STL80N4LLF3 40V <0.005Ω 20A (1) ) s ( ct 1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec • |
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STL80N4LLF3 STL80N4LLF3 | |
ISD1800
Abstract: isd chipcorder application notes HKZ 121 E voice record
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ISD1800 16-SECOND isd chipcorder application notes HKZ 121 E voice record | |
balanced electret mic preamp
Abstract: HKZ 121 E 300MIL 600MIL I1806X ISD1810 HKZ 121 16-SECOND ic 74175 pin diagram
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I1800 16-SECOND balanced electret mic preamp HKZ 121 E 300MIL 600MIL I1806X ISD1810 HKZ 121 ic 74175 pin diagram | |
isd1806
Abstract: ISD18xx ISD1806X HKZ 121 E ISD1800 Voice Record
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ISD1800 16-SECOND isd1806 ISD18xx ISD1806X HKZ 121 E Voice Record |