ISEK Search Results

gd 09

Abstract: sk 753 Semikron sK1 04 SK 09 D 08 3S1E T-03-1 3GD10 SK3GD08 SK3GD06 28N04
Contextual Info: S1E D ai3t.b71 OGüB'lül T37 ISEK G SEMIKRDN SEUIKRON INC V rsm Ifr m s V rrm 3A If a v Fast Recovery Rectifier Diodes maximum values for continuous operation 3A 10 A (sin. 180; Tref= 120 °C, L = 10 mm; f < 1 kHz) SK 09 D SK 1 GD SK3GD 1,1 A 1,15 A 2,7 A

EY81

Abstract: diode V6 81 PY81 philips tubes max 5000 TELEVISION BOOSTER
Contextual Info: PHILIPS E Y 81 BOOSTER DIODE for time base circuits in television re­ ceivers DIODE SURVOLTEUSE pour les circuits base de temps de récepteurs de télévision SPANNUNGSERHÖHERDIODE BOOSTER f.ür Zeitbasisstromkreise in Fernsehempfängern Heating : indirect; parallel supply

ECL85

Abstract: pentode ecl85 philips oszillator philips B TR10DE equivalente
Contextual Info: PHILIPS ÎËCL85 TRIODE-PENTODE for use as frame output tube and frame oscillator or pulse amplifier in television receivers. TRIODE PENTODE pour utilisation comme tube de sortie pour le balayage image et oscillatrice pour le balayage image ou amplificatrice d'impulsions dans les récepteurs de

semikron SK 50 DB 100 D

Contextual Info: SIE D Ö13bb71 GÜG3ÖDD 11T S EM IK R O N SEMIKRON INC Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, Vbe = - 2 V Values > CM I II III m > VcEV Units 1200 V 1200 V V VCBO Ie = 0 1200 V ebo lc = 0 7 V lc D. C. 50 A tp = 1 ms 100 A D. C. 50 A ICM If = - l c

Contextual Info: S1E D • Û 1 3 tib71 Q D D 3 4 0 ^ 713 M S E K C SEMIKRDN S E M I K R O N INC Thyr istor Vrsm Vdrm Vrrm V V Diode Vrsm Vrrm V 1500 1400 2000 1700 1600 2500 2300 2200 3000 = 90 °<2 R.M.S. motor current pe phase) IMRMS 320 A (T e a s e | 410 A 360 A SKKH 131/14 E 20 SKKH 161/14 E 20 SKKH 210/14 E 20

Contextual Info: 51E D Ô13bb71 DDD371Ô M7T se MIKRDN SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Ptot Tj, Tslg Visol hum idity climate C onditions 1 • SEK G Values . 102 D 122 D 1000 I 1200 1000 1 1200 400/300 800/600 ±20 2500 - 5 5 . . .+150

Semikron SK 3 G

Abstract: Semikron sk 1/08
Contextual Info: S1E D fllBbL.71 0003032 S1Û se MIKRD n SEMIKRON INC Ifrm s maximum values for continuous operation V rsm V rrm 3A | 6,7 A 1,9 A V 200 400 600 800 1000 1200 Symbol Conditions Ifav 4,3 A SK 1 G 01 S K 1 G 02 SK 1 G 04 SK 1 G 06 SK 1 G 08 SK1 G 10 SK 1 G 12 *

ecg semiconductors master replacement guide

Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Contextual Info: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei

E17A

Abstract: SKR 870 diode skn 170 semikron semikron skn 320/02 Semikron SKR320 skn diodes B832 DIN41814 semikron skr 100 DO-200
Contextual Info: S1E D • B13fc.fc.71 0003670 533 « S E K G SEMIKRDN SENIKRON INC V rsm Ifrms maximum values for continuous operation V rrm 700 A SKN 320 SKR 320 SKN 400_ IfaV (sin. 180; Tease = 100 °C) 420 A V 200 400 800 1200 1600 1800 2400 2700 3000 SKR 320/02

diode skmd 40 f 10 semikron

Abstract: IR 421F SKMD42F10 SKKD42F15 SKKD42F10 SKKD42F SKKD42F12 SKKD42F14 SKMD42F SKND42F
Contextual Info: S IE D • Ö13bb71 00D3421 BID « I S E K G SEMIKRON SËÎÏIIKRON INC V rsm V rrm Ifrms maximum value for continuous operation 120 A V Ifav (sin. 180; Tease =85°C;50Hz) 42 A 1000 SKKD42F 10 SKMD 42 F 10 SKND42F 10 1200 SKKD42 F 12 SKMD 42 F 12 SKND42F 12

Semikron SKB 7 02

Abstract: DIODE BRIDGE SKB Semikron SKBa SKB 1.2 13 SKB 7 02 SKB 40 SKB 1.2 08 SKB 7 08 SKB 42 SKB1
Contextual Info: S1E D Ö13bb71 □GDB'lb'l V rsm Id Tamb = 45 °C 1,2 A VvRMS V V 100 200 400 800 1200 40 80 125 250 500 V(BR) V VvRMS V 1300 500 Types SKB SKB SKB SKB SKB 1,2/01 1,2/02 1,2/04 1,2/08 1,2/12 Cmax [ 5 000 3 300 1 600 800 400 ; ' ! ! ! I Rmin Q 0,5 0,8 1,5

skm 200 gb 122 d

Abstract: SKM 200 GB 102 D SKM 200 GB 12V Si 122D SKM 150 GB 12V SKM 200 GB 102D skm 150 gal 122d SEMIKRON SKM 50 GAL 121D SEMIKRON SKM 22 GAL 121D semikron skm 150 gb 122
Contextual Info: SEMIKRON Conditions ' VcES VcGR lc ICM V ges Tease Ptot per Values . 101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 200/150 400/300 ±20 1250 - 5 5 . .+150 2 500 Class F 55/150/56 Rge = 20 k fl = 25/80 °C Tease = 25/80 °C T j, Tstg Visol AC, humidity

skm 100 gb 101 d

Abstract: skm 100 gb 121d Si 122D GAL 16 v 8 D DIP skm 100 gb 122 d skm 50 gb 101 d D4252-1 skm 200 gb 122 d skm 75 gb 101 d SEMIKRON SKM 22 GAL 121D
Contextual Info: m SIE I Ö13bb?l D[]G3L,7fl TbS » S E K G semikrdn SENIKRON INC Absolute Maximum Ratings Sym bol Values . 101 D I . 121 D . 102.D I . 122 D Conditions 1 1000 VCES Units 1200. 1000 , V 1200 V VCGR R g e = 2 0 kQ Ic Tease = 2 5 /8 0 °C 1 0 0 /7 5 ICM

HK1G

Abstract: HK-1-G din 7985 b517 SKW1450 hk-2 SKW1000 SKW1200 420PA40 T25E
Contextual Info: 51£J>_J5_fll3bb71 00035b4 S=Ì7 • SEKG s e MIKRO n SEMIKRON INC V drm V rsm V rrm Irm s1 Volw = 4l/min,Tw = 40 °C, ED = 50 %, n = 10) V 2150 A 2400 A 1200 SKW 1450/12 SKW 1700/12 1400 SKW 1450/14 SKW 1700/14 1600 SKW 1450/16 SKW 1700/16 SKW1450 SKW 1700

PY 81

Abstract: PY tube py81 TELEVISION BOOSTER rs tube
Contextual Info: PHILIPS ÎPŸSÏ BOOSTER DIODE for time base circuits in television receivers DIODE SUBVOLTEUSE pour utilisation dans circuits base de temps dans récepteurs de télévision SCHALTERDIODE zur Verwendung ln Zeitbasisschaltungen ln Fernsehempfängern Heating : Indirect by A.C. or D.C.

7093 magnetron

Abstract: magnetron 2m210-m1 magnetrons Philips TA 2092 N WG22 WR28 L6ss DE diode cepe
Contextual Info: PHILIPS Packaged MAGNETRON for use as pulsed oscillator, operating at a fixed frequency within the range 34512-35208 Mc/s, capable of delivering a peak output power of more than 25 kfl at a peak anode current of 12.5 A. It is especially suited for use in high definition short

magnetrons Philips

Abstract: ABZI magnetrons 2J51 DRUCK GLBT M501 U501 sharp modulateur Scans-0017388
Contextual Info: PHILIPS 2J51 F o rc e d - a ir cooled packaged MAQNETRON f o r use as pulsed os­ c i l l a t o r , tunable over a frequency range from 8500-9600 llc/s cap ab le o f d e liv e r in g a peak o u tp u t power Wop > 40 kW a t Timp_= 1 usee. P u ls e d u ra tio n s o f 0.1 &isec up to 3 .4 usee

Contextual Info: SIE ]> SEMIKRON V drm V rsm V rrm Irm s1 Volw • ai3bb?l DG03SSfl 2T3 M t S E K G s e M IK R o n INC = 4 l/min., Tw = 40 °C, ED = 50 %, n = 10) V 1600 A 1750 A 1200 SKIW1000/12 SKIW 1200/12 1400 SKIW1000/14 SKIW 1200/14 1600 SKIW 1000/16 SKIW 1200/16 Symbol Conditions

Contextual Info: SIE D Ö13bb71 □□D3ÔPÔ ST1 » S E K G • SEMIKRDN SEMIKRON INC Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, - 2 600 V V II V o V 600 V ebo o 600 o II I m Vbe = Units > II CM UJ CO > VcEV Values 7 V lc D. C. 150 A tp = 1 ms 300 A If = - l c 150

semikron skkt 19 120

Contextual Info: m fil3bb?l □DQ33Ô1 ÛOM M S E K G 51E D SEMIKRDN SEMIKRON INC V rsm V rrm dv/ V drm dt cr V Itrm s (m axim um values for continuous operation) 240 A | V/|1S 1 50 A (8 5 °C) V 90 0 800 13 00 1200 50 0 500 1000 1500 1400 1000 1700 1600 1000 19 00 1800 1000

Contextual Info: 51E D fil3hb?l D D G 3 7 Û 4 1M7 SEMIKRON S E M I K R O N INC Maximum Ratings Symbol Conditions VcEVsus lc VcEV CÛ > 1 A, Vbe = - 2V > CM I II LU VcBO = Ie = 0 Values Units 1000 V 1000 V 1000 V V ebo lc = 0 7 V lc D. C. 30 A tp = 1 ms 60 A D. C. 30 A ICM

Contextual Info: S IE D m Ö1 3 b b 7 1 ÜGQ3 3 7 1 SEniKR0N INC V rsm Vrrm Vdrm dv/ Itrms (maximum value for continuous operation dt)cr 180 A ITAV (sin. 180;Tcase = 80 CC) V 500 400 500 700 600 500 SKKT 105/06 D SKKT 106/06 D 900 800 500 SKKT 105/08 D SKKT 106/08 D1) SKKH 105/08 D SKKH 106/08 D

Contextual Info: 3bE D SEMIKRON INC ai3bb?l QQQ2fi5M 2 « S E K G • 5EMIKR0N 'T'Vo VoRM I d Tcasa = 89 °C , full conduction V rsm V rrm 28 A 400V SKBT 2 8 /0 4 SKBH 2 8 /0 4 SKBZ 2 8 /0 4 SKCH 2 8 /0 4 600 V SKBT 2 8 /0 6 SKBH 2 8 /0 6 SKBZ 2 8 /0 6 SKCH 2 8 /0 6 800 V

matsua resistor network

Abstract: matsushita resistor network matsushita RESISTOR 7483 resistor network matsua matsua RESISTOR
Contextual Info: No.191 July 1999 Chip resistor network Chip attenuator Minimum size in the market Industry/Field: Mobile communication, Automobilenavigation, Set top box, RF-module Smaller π-Pad attenuator in 0404 size • Development Target: Market : Equipment which needs attenuation, level-adjustment,