ISL9N3 Search Results

ISL9N307AP3

Abstract: ISL9N307AS3ST N307AS
Contextual Info: ISL9N307AP3/ISL9N307AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

AN9321

Abstract: AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS
Contextual Info: ISL9N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features

Contextual Info: PWM Optimized ISL9N308AP3/ISL9N308AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

n312ad

Contextual Info: PWM Optimized ISL9N312AD3ST/ ISL9N312AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 12mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

n322ad

Contextual Info: PWM Optimized ISL9N322AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 20A, 0.022Ω General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

N304AP

Abstract: ISL9N304AP3 ISL9N304AS3ST TC146
Contextual Info: PWM Optimized ISL9N304AP3/ISL9N304AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

N322AP

Abstract: ISL9N322AS3ST N322A ISL9N322AP3 7E10 N322 N322AS
Contextual Info: ISL9N322AP3/ISL9N322AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

Contextual Info: ISL9N305ASK8T N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFET General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching Optimized for switching applications, this device improves

FQP630

Abstract: FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A
Contextual Info: Discrete MOSFET TO-220 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-220 N-Channel ISL9N302AP3 30 Single 0.0025 0.0033 - - 110 75 345 FDP8030L 30 Single 0.0035 0.0045

n310ad

Abstract: ISL9N310AD3
Contextual Info: ISL9N310AD3, ISL9N310AD3S3T TM Data Sheet November 2000 File Number 30V, 0.010 Ohm, 35A, N-Channel Logic Level UltraFET Trench Power MOSFETs PWM Optimized This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining

n308ad

Abstract: ISL9N308AD3ST N-308 35KP ISL9N308AD3
Contextual Info: PWM Optimized ISL9N308AD3 / ISL9N308AD3ST N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

N310AS

Abstract: N310AP ISL9N310AP3 ISL9N310AS3 ISL9N310AS3ST
Contextual Info: ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

n318ad

Abstract: ISL9N318AD3ST
Contextual Info: ISL9N318AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

N306AS

Abstract: n306a ISL9N306AP3 ISL9N306AS3ST 45E-2
Contextual Info: ISL9N306AP3/ISL9N306AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

N308AP

Abstract: 35KP ISL9N308AP3 ISL9N308AS3ST
Contextual Info: PWM Optimized ISL9N308AP3/ISL9N308AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

n322ad

Abstract: ISL9N322AD3ST N-322 N322 16E-3
Contextual Info: PWM Optimized ISL9N322AD3ST N-Channel Logic Level UltraFET Trench MOSFET 30V, 20A, 0.022Ω General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

ISL9N303AP3

Abstract: ISL9N303AS3 ISL9N303AS3ST N303AP N303AS diode marking 41a on semiconductor KP20
Contextual Info: PWM Optimized ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining

N316AD

Contextual Info: ISL9N316AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

n310ad

Abstract: ISL9N310AD3 40e5
Contextual Info: ISL9N310AD3, ISL9N310AD3S3T Data Sheet November 2000 File Number 30V, 0.010 Ohm, 35A, N-Channel Logic Level UltraFET Trench Power MOSFETs PWM Optimized This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining

n327ad

Abstract: ISL9N327AD3ST
Contextual Info: ISL9N327AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

n310ad

Contextual Info: ISL9N310AD3/ISL9N310AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching

ISL9N305ASK8T

Abstract: 76T marking
Contextual Info: ISL9N305ASK8T N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFET General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching Optimized for switching applications, this device improves

N316A

Contextual Info: ISL9N316AP3, ISL9N316AS3ST TM Data Sheet January 2001 File Number 30V, 0.0155 Ohm, 48A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Contextual Info: ISL9N310AP3, ISL9N310AS3ST TM Data Sheet November 2000 File Number 30V, 0.010 Ohm, 62A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.