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    ISOTOP MOSFET 100V Search Results

    ISOTOP MOSFET 100V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    ISOTOP MOSFET 100V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    isotop mosfet 180A 100V

    Abstract: "Level Shifter" mosfet STPS80100TV ST62xx mosfet 600v power mosfet 600v MOSFET TO-220 2x60 600v
    Text: POWER TRACTION Driver & Breaking . 12/24/48V STMicroelectronics SOLUTIONS Direction Control Panel RECOMMENDED DEVICES MAIN FEATURES Drive & Break L6353 STE250/180N06/10 STWxxNE10 STPS80100TV STTA6006TV / 12006TV High Current Gate Driver 8Apeak Mosfet ISOTOP 60/100V, 250/180A


    Original     		PDF 12/24/48V L6353 STE250/180N06/10 STWxxNE10 STPS80100TV STTA6006TV 12006TV 60/100V, 250/180A O-247 isotop mosfet 180A 100V "Level Shifter" mosfet STPS80100TV ST62xx mosfet 600v power mosfet 600v MOSFET TO-220 2x60 600v

    STE250NS10

    Abstract: No abstract text available
    Text: STE250NS10 N-CHANNEL 100V - 0.0045 Ω - 220A ISOTOP STripFET POWER MOSFET TYPE STE250NS10 • ■ ■ VDSS RDS on ID 100 V <0.0055 Ω 220A TYPICAL RDS(on) = 0.0045Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED APPLICATIONS ■ SMPS & UPS ■ MOTOR CONTROL


    Original     		PDF STE250NS10 STE250NS10

    STE180N10

    Abstract: Ultrasonic welding circuit diagram S18000
    Text: STE180N10 N - CHANNEL 100V - 0.0055 Ω - 180A - ISOTOP POWER MOSFET TYPE STE180N10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.007 Ω 180 A TYPICAL RDS(on) = 0.0055 Ω 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		PDF STE180N10 STE180N10 Ultrasonic welding circuit diagram S18000

    200V 200A mosfet

    Abstract: SOT-227 heatsink CHopper DC ISOTOP isotop mosfet 100V APT20M22JVRU2
    Text: APT20M22JVRU2 ISOTOP Boost chopper MOSFET Power Module K D S K Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Very rugged • Low profile


    Original     		PDF APT20M22JVRU2 OT-227) 200V 200A mosfet SOT-227 heatsink CHopper DC ISOTOP isotop mosfet 100V APT20M22JVRU2

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original     		PDF APT10M11JVRU2 OT-227)

    isotop mosfet 180A 100V

    Abstract: STE180NE10
    Text: STE180NE10 N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET TYPE STE180NE10 • ■ ■ ■ ■ VDSS RDS on ID 100 V < 6 mΩ 180A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		PDF STE180NE10 isotop mosfet 180A 100V STE180NE10

    isotop mosfet 100V

    Abstract: APT10M11JVRU2
    Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original     		PDF APT10M11JVRU2 OT-227) isotop mosfet 100V APT10M11JVRU2

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11m max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction  Brake switch


    Original     		PDF APT10M11JVRU2 OT-227)

    isotop mosfet 180A 100V

    Abstract: STE180N10
    Text: STE180N10 N - CHANNEL 100V - 5.5 mΩ - 180A - ISOTOP POWER MOSFET TYPE STE180N10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 7 mΩ 180 A TYPICAL RDS(on) = 5.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		PDF STE180N10 isotop mosfet 180A 100V STE180N10

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control  Switched Mode Power Supplies G S A A S D G VDSS = 100V RDSon = 11m max @ Tj = 25°C ID = 142A @ Tc = 25°C Features  Power MOS V® MOSFETs - Low RDSon


    Original     		PDF APT10M11JVRU3 OT-227)

    MOSFET Module 100v 1000A

    Abstract: APT10M11JVRU3 SOT-227 heatsink
    Text: APT10M11JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Features • Power MOS V® MOSFETs - Low RDSon


    Original     		PDF APT10M11JVRU3 OT-227) MOSFET Module 100v 1000A APT10M11JVRU3 SOT-227 heatsink

    APT0502

    Abstract: No abstract text available
    Text: APT58M50JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 500V RDSon = 65mΩ Max @ Tj = 25°C ID = 58A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original     		PDF APT58M50JCU2 OT-227) APT0502

    isotop mosfet 180A 100V

    Abstract: schematic diagram UPS Ultrasonic welding circuit diagram schematic diagram welding device Ultrasonic welding circuit STE180NE10 schematic diagram electrical motor control
    Text: STE180NE10  N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET TYPE STE180NE10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 6 mΩ 180 A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		PDF STE180NE10 isotop mosfet 180A 100V schematic diagram UPS Ultrasonic welding circuit diagram schematic diagram welding device Ultrasonic welding circuit STE180NE10 schematic diagram electrical motor control

    Untitled

    Abstract: No abstract text available
    Text: APT58M50JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 500V RDSon = 65mΩ Max @ Tj = 25°C ID = 58A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode - Zero reverse recovery


    Original     		PDF APT58M50JCU3 OT-227)

    STE48NM50

    Abstract: No abstract text available
    Text: STE48NM50 N-CHANNEL 500V - 0.08Ω - 48A ISOTOP MDmesh Power MOSFET TYPE STE48NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.1Ω 48 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE


    Original     		PDF STE48NM50 STE48NM50

    APT0502

    Abstract: 20A 100 V ISOTOP
    Text: APT58M50JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 500V RDSon = 65mΩ Max @ Tj = 25°C ID = 58A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode - Zero reverse recovery


    Original     		PDF APT58M50JCU3 OT-227) APT0502 20A 100 V ISOTOP

    isotop mosfet 100V

    Abstract: STE53NM50
    Text: STE53NM50 N-CHANNEL 500V - 0.08Ω - 50A ISOTOP MDmesh Power MOSFET PRELIMINARY DATA TYPE STE53NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.1Ω 50 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE


    Original     		PDF STE53NM50 isotop mosfet 100V STE53NM50

    APT20M22JVRU3

    Abstract: 200V 200A mosfet MOSFET Module 100v 1000A
    Text: APT20M22JVRU3 ISOTOP Buck chopper MOSFET Power Module D VDSS = 200V RDSon = 22mΩ max @ Tj = 25°C ID = 97A @ Tc = 25°C Application • • G AC and DC motor control Switched Mode Power Supplies Features S • A • • • A S Power MOS V® MOSFETs - Low RDSon


    Original     		PDF APT20M22JVRU3 OT-227) APT20M22JVRU3 200V 200A mosfet MOSFET Module 100v 1000A

    APT20M22JVRU3

    Abstract: No abstract text available
    Text: APT20M22JVRU3 ISOTOP Buck chopper MOSFET Power Module D VDSS = 200V RDSon = 22mΩ max @ Tj = 25°C ID = 97A @ Tc = 25°C Application • • G AC and DC motor control Switched Mode Power Supplies Features S • A A S • • • Power MOS V® MOSFETs - Low RDSon


    Original     		PDF APT20M22JVRU3 OT-227) APT20M22JVRU3

    Untitled

    Abstract: No abstract text available
    Text: APT20M22JVRU3 ISOTOP Buck chopper MOSFET Power Module D VDSS = 200V RDSon = 22m max @ Tj = 25°C ID = 97A @ Tc = 25°C Application •  G AC and DC motor control Switched Mode Power Supplies Features S  A A S    Power MOS V® MOSFETs - Low RDSon


    Original     		PDF APT20M22JVRU3 OT-227)

    STE110NS20FD

    Abstract: No abstract text available
    Text: STE110NS20FD N-CHANNEL 200V - 0.022Ω - 110A ISOTOP MESH OVERLAY Power MOSFET TYPE STE110NS20FD n n n n n n n VDSS RDS on ID 200V < 0.024Ω 110 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ± 20V GATE TO SOURCE VOLTAGE RATING


    Original     		PDF STE110NS20FD STE110NS20FD

    SOT-227 lead frame

    Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
    Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic


    Original     		PDF MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series

    MOSFET 600v 60a

    Abstract: 100V 60A Mosfet APT80M60J MIC4452
    Text: APT80M60J 600V, 84A, 0.055Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT80M60J E145592 MOSFET 600v 60a 100V 60A Mosfet APT80M60J MIC4452

    APT19M120J

    Abstract: MIC4452
    Text: APT19M120J 1200V, 19A, 0.53Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		PDF APT19M120J E145592 APT19M120J MIC4452