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    ISOTOP MOSFET 100V Search Results

    ISOTOP MOSFET 100V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    ISOTOP MOSFET 100V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E250NS10

    Abstract: JESD97 STE250NS10 isotop mosfet 100V
    Text: STE250NS10 N-channel 100V - 0.0045Ω - 220A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE250NS10 100V <0.0055Ω 220A • Standard threshold drive ■ 100% avalanche tested Description ISOTOP This Power MOSFET is the latest development of


    Original     		PDF STE250NS10 E250NS10 E250NS10 JESD97 STE250NS10 isotop mosfet 100V

    e180ne10

    Abstract: No abstract text available
    Text: STE180NE10 N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE180NE10 100V <6mΩ 180A • 100% avalanche tested ■ Low intrinsic capacitance ■ Gate charge minimized ■ Reduced voltage spread ISOTOP


    Original     		PDF STE180NE10 STE180NE10 E180NE10

    e180ne10

    Abstract: isotop mosfet 180A 100V STE180NE10 MOSFET MARKING ST JESD97
    Text: STE180NE10 N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE180NE10 100V <6mΩ 180A • 100% avalanche tested ■ Low intrinsic capacitance ■ Gate charge minimized ■ Reduced voltage spread ISOTOP


    Original     		PDF STE180NE10 e180ne10 isotop mosfet 180A 100V STE180NE10 MOSFET MARKING ST JESD97

    e180ne10

    Abstract: E180N STE180NE10 STE180N JESD97
    Text: STE180NE10 N-channel 100V - 4.5mΩ - 180A - ISOTOP STripFET Power MOSFET General features Type VDSS RDS on ID STE180NE10 100V <6mΩ 180A • 100% avalanche tested ■ Low intrinsic capacitance ■ Gate charge minimized ■ Reduced voltage spread ISOTOP


    Original     		PDF STE180NE10 e180ne10 E180N STE180NE10 STE180N JESD97

    isotop mosfet 180A 100V

    Abstract: "Level Shifter" mosfet STPS80100TV ST62xx mosfet 600v power mosfet 600v MOSFET TO-220 2x60 600v
    Text: POWER TRACTION Driver & Breaking . 12/24/48V STMicroelectronics SOLUTIONS Direction Control Panel RECOMMENDED DEVICES MAIN FEATURES Drive & Break L6353 STE250/180N06/10 STWxxNE10 STPS80100TV STTA6006TV / 12006TV High Current Gate Driver 8Apeak Mosfet ISOTOP 60/100V, 250/180A


    Original     		PDF 12/24/48V L6353 STE250/180N06/10 STWxxNE10 STPS80100TV STTA6006TV 12006TV 60/100V, 250/180A O-247 isotop mosfet 180A 100V "Level Shifter" mosfet STPS80100TV ST62xx mosfet 600v power mosfet 600v MOSFET TO-220 2x60 600v

    STE250NS10

    Abstract: No abstract text available
    Text: STE250NS10 N-CHANNEL 100V - 0.0045 Ω - 220A ISOTOP STripFET POWER MOSFET TYPE STE250NS10 • ■ ■ VDSS RDS on ID 100 V <0.0055 Ω 220A TYPICAL RDS(on) = 0.0045Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED APPLICATIONS ■ SMPS & UPS ■ MOTOR CONTROL


    Original     		PDF STE250NS10 STE250NS10

    Ultrasonic welding circuit diagram

    Abstract: STE250NS10
    Text: STE250NS10 N-CHANNEL 100V - 0.0045 Ω - 220A ISOTOP STripFET POWER MOSFET TYPE STE250NS10 • ■ ■ VDSS R DS on ID 100 V <0.0055 Ω 220A TYPICAL RDS(on) = 0.0045Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED APPLICATIONS ■ SMPS & UPS ■ MOTOR CONTROL


    Original     		PDF STE250NS10 Ultrasonic welding circuit diagram STE250NS10

    STE180N10

    Abstract: Ultrasonic welding circuit diagram S18000
    Text: STE180N10 N - CHANNEL 100V - 0.0055 Ω - 180A - ISOTOP POWER MOSFET TYPE STE180N10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.007 Ω 180 A TYPICAL RDS(on) = 0.0055 Ω 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		PDF STE180N10 STE180N10 Ultrasonic welding circuit diagram S18000

    200V 200A mosfet

    Abstract: SOT-227 heatsink CHopper DC ISOTOP isotop mosfet 100V APT20M22JVRU2
    Text: APT20M22JVRU2 ISOTOP Boost chopper MOSFET Power Module K D S K Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Very rugged • Low profile


    Original     		PDF APT20M22JVRU2 OT-227) 200V 200A mosfet SOT-227 heatsink CHopper DC ISOTOP isotop mosfet 100V APT20M22JVRU2

    APT10M11JVRU2

    Abstract: MOSFET Module 100v 1000A
    Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D S K Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Very rugged • Low profile


    Original     		PDF APT10M11JVRU2 OT-227) APT10M11JVRU2 MOSFET Module 100v 1000A

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original     		PDF APT10M11JVRU2 OT-227)

    isotop mosfet 180A 100V

    Abstract: STE180NE10
    Text: STE180NE10 N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET POWER MOSFET TYPE STE180NE10 • ■ ■ ■ ■ VDSS RDS on ID 100 V < 6 mΩ 180A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		PDF STE180NE10 isotop mosfet 180A 100V STE180NE10

    isotop mosfet 100V

    Abstract: APT10M11JVRU2
    Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original     		PDF APT10M11JVRU2 OT-227) isotop mosfet 100V APT10M11JVRU2

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVRU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 100V RDSon = 11m max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction  Brake switch


    Original     		PDF APT10M11JVRU2 OT-227)

    isotop mosfet 180A 100V

    Abstract: STE180N10
    Text: STE180N10 N - CHANNEL 100V - 5.5 mΩ - 180A - ISOTOP POWER MOSFET TYPE STE180N10 • ■ ■ ■ ■ V DSS R DS on ID 100 V < 7 mΩ 180 A TYPICAL RDS(on) = 5.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    Original     		PDF STE180N10 isotop mosfet 180A 100V STE180N10

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control  Switched Mode Power Supplies G S A A S D G VDSS = 100V RDSon = 11m max @ Tj = 25°C ID = 142A @ Tc = 25°C Features  Power MOS V® MOSFETs - Low RDSon


    Original     		PDF APT10M11JVRU3 OT-227)

    Untitled

    Abstract: No abstract text available
    Text: APT33N90JCU2 ISOTOP Boost chopper VDSS = 900V RDSon = 120m max @ Tj = 25°C ID = 33A @ Tc = 25°C Super Junction MOSFET Power Module K D Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction  Brake switch


    Original     		PDF APT33N90JCU2 OT-227)

    Untitled

    Abstract: No abstract text available
    Text: APT33N90JCCU2 ISOTOP Boost chopper VDSS = 900V RDSon = 120m max @ Tj = 25°C ID = 33A @ Tc = 25°C Super Junction MOSFET SiC chopper diode Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction  Brake switch


    Original     		PDF APT33N90JCCU2 OT-227)

    Untitled

    Abstract: No abstract text available
    Text: APT10M11JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Features • Power MOS V® MOSFETs - Low RDSon


    Original     		PDF APT10M11JVRU3 OT-227)

    MOSFET Module 100v 1000A

    Abstract: APT10M11JVRU3 SOT-227 heatsink
    Text: APT10M11JVRU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 100V RDSon = 11mΩ max @ Tj = 25°C ID = 142A @ Tc = 25°C Features • Power MOS V® MOSFETs - Low RDSon


    Original     		PDF APT10M11JVRU3 OT-227) MOSFET Module 100v 1000A APT10M11JVRU3 SOT-227 heatsink

    Untitled

    Abstract: No abstract text available
    Text: APT58M50JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 500V RDSon = 65mΩ Max @ Tj = 25°C ID = 58A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original     		PDF APT58M50JCU2 OT-227)

    transistors mj 1504

    Abstract: APT0502
    Text: APT33N90JCCU2 ISOTOP Boost chopper VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 33A @ Tc = 25°C Super Junction MOSFET SiC chopper diode Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original     		PDF APT33N90JCCU2 OT-227) transistors mj 1504 APT0502

    3C043

    Abstract: No abstract text available
    Text: S TE 180N 10 N - CHANNEL 100V - 0.055 Q - 180A - ISOTOP POWER MOSFET TYPE STE180N 10 V dss RDS on Id 100 V < 0 .0 0 7 Í2 180 A TYPICAL R d s (oii) = 0.055 Q 100% AVALANCHE TESTED . LOW INTRINSIC CAPACITANCE . GATE CHARGE MINIMIZED . REDUCED VOLTAGE SPREAD


    OCR Scan     		PDF STE180N 3C04390 3C043

    Untitled

    Abstract: No abstract text available
    Text: STE180N10 N - CHANNEL 100V - 5.5 m£1 - 180A - ISOTOP POWER MOSFET TYPE V STE180N10 • . . . . d s s 100 V R d S o ii < 7 m£2 Id 180 A TYPICAL RDS(on) = 5.5 m il 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD


    OCR Scan     		PDF STE180N10