ISS 99 DIODE Search Results

03BPL001

Abstract: beamsplitter 03BPL007 03BPL003 22-wavelength
Contextual Info: 8/28/99 2:30 PM Page 11.14 Pellicle Beamsplitters te 45° in ci de nt uncoated surface fB f D n tr an sm iss io n io ct fle A pellicle beamsplitter is a high tensile strength elastic membrane, stretched like a drumhead over a black anodized flat metal frame,

IRF7101

Abstract: IRF7326D2
Contextual Info: PD - 93763 IRF7326D2 FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint 1 8 K

IRF7326D2

Abstract: IRF7101
Contextual Info: PD - 93763 IRF7326D2 FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint 1 8 K

MA721

Abstract: Schottky Diode SOT-89 Schottky Barrier Diode SOT-89 step-up sot-23 Step-up DC/DC Converter marking sot-23 regulator dcdc sot-89
Contextual Info: ELM93xxxA HIGH EFFICIENCY PFM STEP-UP DC/DC CONVERTER • GENERAL DESCRIPTION ELM93xxxA Series is a CMOS step-up DC-DC Converter. As external parts, a coil, diode, and capacitor are used to obtain constant output voltage 2.7V, 3.0V, 3.3V higher than input voltage.

C3289

Abstract: C32S1 c3277
Contextual Info: VARACTOR TUNING DIODES l i l a i i l l P a rt P ro d u c t H ig h lig h ts C a p a c ita n c e a t V „= 4 0 V and f= 1 0 M H z iillllllli! W C3289 7 W C3290 10 W C3291 12 W C3292 15 W C3293 H ig h V o lt a g e F ig u r e o f M a rti at 4 0 V and se M Hz

ISS 99 diode

Contextual Info: WIRELESS - Voltage Converter AVC7660 Switched Capacitor Voltage Converter Preliminary REVO FEATURES Small SOT-25 package saves board spaceonly 4mm x 5mm total mounting area 75 SI output impedance 75mV loss per 1mA load APPLICATIONS Simple conversion of +5 V to - 5V supplies

AA7 smd diode

Abstract: C10T60F C10T60F-11A FCF10A60 GCF10A60
Contextual Info: FAST RECOVERY DIODE C10T60F C10T60F-11A 11A /6 0 0 V / trr : 40nsec 10.4C.409 9.8 .3S6) FEATURES o | SQUARE-PAK I TO-263AB (SMD) Packaged in 24mm Tape and Reel : C10T60F o Tabless TO-220: C10T60F-11A o T0-220AB : GCF10A60 o TO-22ÛAB Fully Molded Isolation

ISS 99 diode

Contextual Info: • G 0 6114577 GDGG734 TB b AVC7660S9C h m p iG ic s ' Switched Capacitor Voltage Converter Preliminary Your GaAs 1C Source REVO FEATURES • • • • Small SOT-25 package saves board space- only 4mm x 5mm total mounting area 75 £2 output impedance 75mV loss per

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

IRF7524D1

Abstract: IR IL 070 503 11 02 HEXFET SO-8
Contextual Info: PD -91648C IRF7524D1 PRELIMINARY FETKYTM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint A A S G 1 8 K 2 7 K 3 6 4 5 D VDSS = -20V

P65 MOSFET

Abstract: IRF7353D2
Contextual Info: PD- 93809 IRF7353D2 FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-Pack HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint

Contextual Info: WIRELESS - Voltage Converter AVC7660 Switched Capacitor Voltage Converter Preliminary REVO FEATURES Small SOT-25 package saves board spaceonly 4mm x 5mm total mounting area 75 i2 output impedance 75mV loss per 1mA load APPLICATIONS Simple conversion of +5 V to - 5V supplies

ISS 99 diode

Abstract: OPT201 OPT201KP 30E-9
Contextual Info: * OPT201 INTEGRATED PHOTODIODE AND AMPLIFIER MACROMODEL * * CREATED USING PARTS 3/18/93 WM * REV.A * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE; | * | HOWEVER; BURR-BROWN ASSUMES NO RESPONSIBILITY FOR INACCURACIES OR

00E-6

Abstract: OPT209
Contextual Info: * OPT209 INTEGRATED PHOTODIODE AND AMPLIFIER MACROMODEL * Bandwidth 16kHz, Iq = 0.4mA * * CREATED USING PARTS 4/27/94 WM * REV. A * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;

ISS 99 diode

Abstract: OPT211
Contextual Info: * OPT211 INTEGRATED PHOTODIODE AND AMPLIFIER MACROMODEL * * CREATED USING PARTS 12/6/94 WM * REV.A * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE; | * | HOWEVER; BURR-BROWN ASSUMES NO RESPONSIBILITY FOR INACCURACIES OR

CD4023A

Abstract: CD4023 175C 300C
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 07/22/99 Last Update Date: 11/17/99 Last Major Revision Date: 07/22/99 MJCD4023A-X REV 1A0 TRIPLE 3-INPUT NAND GATE General Description The CD4023 is a monolithic complementary MOS CMOS integrated circuit constructed with Nand P- channel enhancement mode transistors. It has equal source and sink current

CD4007A

Abstract: 023mA CD4007 175C 300C
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 07/15/99 Last Update Date: 07/30/99 Last Major Revision Date: 07/15/99 MJCD4007A-X REV 1A0 DUAL COMPLEMENTARY PAIR PLUS INVERTER General Description The CD4007 consists of three complementary pairs of N- and P- channel enhancement mode MOS

Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information SDH/SONET 2.5Gb/s Laser Diode Driver VSC7927 Features • Rise Times Less Than 100ps • Direct Access to Modulation and Bias FET’s • High Speed Operation Up to 2.5 Gb/s NRZ Data • Data Density Monitors

Contextual Info: AVC7660S9C EmhDtacs 1 Switched Capacitor Voltage Converter Preliminary Your GbAs IC Source revo APPLICATIONS FEATURES • • • Small SOT-25 package saves board space- only 4mm x 5mm total mounting area 75 Cl output impedance 75mV loss per 1mA load Smaller external capacitors due to

Contextual Info: C3d ci] . . . . . . . . . . t . . RURG5070, t/f RURG5080 ii/ i lU v i/ o i/ RURG5090, RURG50100 n i/ i !v f % / v / I 50A, 700V - 1 000V Ultrafast Diodes D e c e m b e r 1 99 3 Package Features J E D E C S T Y L E 2 L E A D TO-247 T O P VIEW • Ultrafast with Soft Recovery. <125ns

S3 DIODE schottky

Abstract: 100N10S1
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 S2 4 D VDSS ID25 RDS(on) = 100 V = 100 A = 15 mW S3 4(D)

S3 DIODE schottky

Abstract: 100N1
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 S2 4 D VDSS ID25 RDS(on) = 100 V = 100 A = 15 mW S3 4(D)

CD4001A

Abstract: JM4001ABCA 175C 300C CD4001B
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 06/16/99 Last Update Date: 07/30/99 Last Major Revision Date: 06/16/99 MJCD4001A-X REV 1A0 QUAD 2-INPUT NOR GATE General Description These quad gates are monolithic complementary MOS CMOS integrated circuits constructed

CD4011A

Abstract: 175C 300C JM4011ABCA JM4011ABDA JM40
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 06/15/99 Last Update Date: 07/30/99 Last Major Revision Date: 06/15/99 MJCD4011A-X REV 1A0 QUAD 2-INPUT NAND GATE General Description These quad gates are monolithic complementary MOS CMOS integrated circuits constructed