ISS-101 DIODE Search Results

YG802C09

Abstract: YG802N09 A448 yg802c
Contextual Info: YG802C N 09( ioa) SCHOTTKY B A RRIER DIODE : Features Insulated package by fully m olding. • teV F Low VF • T .A 'V + V 'f C o n n e c tio n D ia g ra m Super high speed switching. • f a it Y G 802C 09 High reliability by planer design.’ {¿)Q PI 1

S-80746AL

Abstract: S-80751SL-EF-X dtx 370
Contextual Info: Contents Features .1 Pin Assignment .1 Block

Contextual Info: Contents Features .1 Pin Assignment .1 Block

a7x transistor

Abstract: TRANSISTOR 318 13003 S80742AL S805 S-80746AL S-805 S-807 Diode A4X S-808 S80727AN
Contextual Info: Rev.2.0 * S-807 Series will be summarized into S-808 Series. S-807 Series HIGH-PRECISION VOLTAGE DETECTOR The S-807 Series is an adjustment-free high-precision voltage detector made using the CMOS process. The output voltage is fixed internally, with an accuracy of ±2.4%. Two output types are available, Nch opendrain and CMOS output active “H” and “L” , both of which have various

S-807 Series

Abstract: replacement transistor 13003 S-80746AL S-805 S-807 S-80716AN S-808 dtx 370 S-80722 S807XX
Contextual Info: Contents Features .1 Pin Assignment .1 Block

S-80746AL

Abstract: S-805 S-807 S-80716AN S-808 transistor 3904 TO-92
Contextual Info: Contents Features. 1 Applications . 1 Pin Assignment. 1 Block Diagram . 2

replacement transistor 13003

Abstract: S-805 S-807 S-80716AN S-808 S-80745 S807XX S-80740AH-B4-X 80747 S-80730
Contextual Info: Contents Features. 1 Applications . 1 Pin Assignment. 1 Block Diagram . 2

BSC014N04LSI

Abstract: BSC014N04
Contextual Info: BSC014N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.45 mW ID 100 A QOSS

BSC014N04LSI

Abstract: bsc014n04 BSC014N04LS
Contextual Info: BSC014N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.45 mW ID 100 A QOSS

Contextual Info: BSC010N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.05 mW ID 100 A QOSS

Contextual Info: BSN011NE2LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 25 V RDS(on),max 1.1

DIODE DS12

Contextual Info: BSN011NE2LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 25 V RDS(on),max 1.1

0901NSI

Abstract: BSC0901NSI IEC61249-2-21
Contextual Info: BSC0901NSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized SyncFET for high performance buck converter • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 30 V RDS(on),max

Contextual Info: BSN011NE2LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 25 V RDS(on),max 1.1

PG-TSDSON-8

Contextual Info: BSZ0904NSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized SyncFET for high performance buck converter • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 30 V RDS(on),max

Contextual Info: BSZ0902NSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized SyncFET for high performance buck converter • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 30 V RDS(on),max

Contextual Info: BSC0901NSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized SyncFET for high performance buck converter • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 30 V RDS(on),max

Contextual Info: BSN011NE2LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 25 V RDS(on),max 1.1

018NE2LI

Contextual Info: BSC018NE2LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 25 V RDS(on),max 1.8

Contextual Info: BSZ0901NSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized SyncFET for high performance buck converter • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 30 V RDS(on),max

Contextual Info: BSC014N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.45 mW ID 100 A QOSS

BSC010N04LSI

Contextual Info: BSC010N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.05 mW ID 100 A QOSS

Contextual Info: BSC014N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.45 mW ID 100 A QOSS

Contextual Info: BSZ018NE2LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested VDS 25 V RDS(on),max 1.8