ISSI 64MB Search Results

as15 G

Abstract: AS15 U as15 h TB001 0AP15 IS82C600 TMS320LC54X 6AP15 AS10
Contextual Info: ISSI ISSI IS82C600 IS82C600 TRAILBLAZER High-Speed SRAM with Address Decoding and Ready Logic ® PRELIMINARY JANUARY 1999 FEATURES • Zero wait-state performance on the Primary Bus — Point-to-point interface between the SRAM and the high-speed processor

Contextual Info: ISSI IS43R16160A1 16Meg x 16 256-MBIT DDR SDRAM PRELIMINARY INFORMATION MAY 2006 FEATURES DEVICE OVERVIEW • • ISSI’s 256-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory

16M x 16 DDR TSOP-66

Abstract: DDR333 DDR400 IS43R16160A
Contextual Info: ISSI IS43R16160A 16Meg x 16 256-MBIT DDR SDRAM PRELIMINARY INFORMATION NOVEMBER 2005 FEATURES DEVICE OVERVIEW • • ISSI’s 256-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory

ISSI 742

Contextual Info: ISSI IS43R16160A 16Meg x 16 256-MBIT DDR SDRAM PRELIMINARY INFORMATION AUGUST 2005 FEATURES DEVICE OVERVIEW • • ISSI’s 256-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory

512MB SRAM

Abstract: TSOP-II 44 issi 8Mx16 SDRAM tsop-ii micross tsopII 16Mx16 ISSI
Contextual Info: ISSI & Micross Components announce Agreement to Supply MIL Temp Memory March 2011 March 2011 ISSI & Micross Mi Partnership P t hi for f MIL Temp T Memory M  ISSI announces partnership with

IS41LV16400

Contextual Info: ISSI IS41LV16400 4M x 16 64-MBIT DYNAMIC RAM WITH EDO PAGE MODE AUGUST 2001 FEATURES DESCRIPTION • Extended Data-Out (EDO) Page Mode access cycle The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called

IS41LV16400

Abstract: 32A11A1
Contextual Info: ISSI IS41LV16400 4M x 16 64-MBIT DYNAMIC RAM WITH EDO PAGE MODE NOVEMBER 1999 FEATURES DESCRIPTION • Extended Data-Out (EDO) Page Mode access cycle The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called

Contextual Info: ISSI IS 4 1 L V 1 6 4 0 0 4M x 16 64-MBIT DYNAMIC RAM WITH EDO PAGE MODE ADVANCE INFORMATION JULY 1999 DESCRIPTION FEATURES The ISSI IS41LV16400 is 4,194304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page

IS42LS16800A

Abstract: IS42LS32400A IS42LS81600A IS42S16800A IS42S32400A IS42S81600A 2MX16x4
Contextual Info: IS42S81600A, IS42LS81600A IS42S16800A, IS42LS16800A IS42S32400A, IS42LS32400A ISSI 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM ADVANCED INFORMATION AUGUST 2002 • Clock frequency: 133 100, MHz OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed

Contextual Info: Enhancing Long-Term Reliability with Copper Leadframes One of the points to consider when selecting a semiconductor device is the package reliability, relative to the operating conditions of the electronics application. With this in mind, ISSI recently added synchronous

BGA-60

Abstract: IS43R32800D IS43R32400E
Contextual Info: High-Speed DDR SDRAM ► ISSI DDR Standard Features ► Applications • Access and Aggregation Nodes • Enterprise Switches • Packet Optical Transport • Core and Edge Routers • Automotive Multimedia and Telematics • Industrial Test and Measurement

00E-12

Contextual Info: IS43R83200D IS43/46R16160D, IS43/46R32800D ADVANCED INFORMATION 8Mx32, 16Mx16, 32Mx8 DECEMBER 2011 256Mb DDR SDRAM FEATURES DEVICE OVERVIEW • • • • ISSI’s 256-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word

IS43R16400B

Abstract: DDR SDRAM 43R16400B BA0A11
Contextual Info: IS43R16400B OCTOBER 2012 4Mx16 64Mb DDR SDRAM FEATURES DEVICE OVERVIEW • • • • ISSI’s 64-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 67,108,864-bit memory array is internally organized as four banks of 16Mb to

IS42S32200C1

Contextual Info: ISSI IS42S32200C1-DIE 512K Bits x 32 Bits x 4 Banks 64-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 166, 143 MHz PRELIMINARY INFORMATION May 2005 OVERVIEW ISSI's 64Mb Synchronous DRAM IS42S32200C1 is • LVTTL interface organized as 524,288 bits x 32-bit x 4-bank for improved

Contextual Info: Enhancing Long-Term Reliability with Copper Leadframes One of the points to consider when selecting a semiconductor device is the package reliability, relative to the expected operating conditions of the electronics application. With this in mind, ISSI now includes

LZ 44 ns

Contextual Info: IS43R83200D IS43/46R16160D, IS43/46R32800D ADVANCED INFORMATION 8Mx32, 16Mx16, 32Mx8 NOVEMBER 2011 256Mb DDR SDRAM FEATURES DEVICE OVERVIEW • • • • ISSI’s 256-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word

IS43R32800D

Contextual Info: IS43R83200D IS43/46R16160D, IS43/46R32800D ADVANCED INFORMATION 8Mx32, 16Mx16, 32Mx8 NOVEMBER 2010 256Mb DDR SDRAM FEATURES DEVICE OVERVIEW • • • • ISSI’s 256-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word

PSRAM

Abstract: Flash Memory 32Mbit
Contextual Info: ISSI IS75V16F96GS32 3.0 Volt Multi-Chip Package MCP — 96 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo SRAM TARGET INFORMATION OCTOBER 2002 MCP FEATURES • Erase Algorithms: • Power supply voltage 2.7V to 3.1V • High performance:

PSRAM 256 FLash

Contextual Info: ISSI IS75V16F128GS32 3.0 Volt- Multi-Chip Package MCP — 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM TARGET INFORMATION OCTOBER 2002 MCP FEATURES • Power supply voltage 2.7V to 3.1V • High performance: Flash: 70ns maximum access time

Contextual Info: ISSI IS75V16F128GS32 3.0 Volt Multi-Chip Package MCP — 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM PRELIMINARY INFORMATION January 2003 MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: Flash: 70ns maximum access time

SA52 DT 90

Contextual Info: ISSI IS75V16F96GS32 3.0 Volt Multi-Chip Package MCP — 96 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo SRAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: Flash: 70ns maximum access time PSRAM: 65ns maximum access time

Contextual Info: IS42S16800L IS42S32400L ISSI 8Meg x16 & 4Meg x 32 128-MBIT PowerSaver SYNC DYNAMIC RAM FEATURES • Clock frequency: 143, 100, MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply

Contextual Info: ISSI IS45S16400A 1 Meg Bits x 16 Bits x 4 Banks 64-MBIT AUTOMOTIVE SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 133, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge

Contextual Info: ISSI IS75V16F128GS32 3.0 Volt- Multi-Chip Package MCP — 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM PRELIMINARY INFORMATION OCTOBER 2002 MCP FEATURES • Power supply voltage 2.7V to 3.1V • High performance: Flash: 70ns maximum access time