ISSI IS61LV6416 Search Results

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

IS61LV6416-20T

Abstract: IS61LV6416 ISSI IS61LV6416
Contextual Info: ISSI ISSI IS61LV6416 IS61LV6416 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES ® ADVANCE INFORMATION OCTOBER 1996 1 DESCRIPTION The ISSI IS61LV6416 is a high-speed, 1,048,576-bit static • High-speed access time: 12, 15, 20 ns • CMOS low power operation

roadmap ISSI

Abstract: IS61C1024 IS61C64AH IS61C64B IS62C64 IS89C52 IS25M080A5T2R IS80C32 flash memory 5v 16M-bit 48 TSOP ISSI
Contextual Info: Memory Based Solutions ISSI Integrated Silicon Solution, Inc. ISSI www.issi.com 1 ISSI_498 04/09/98 ® Integrated Silicon Solution, Inc. Memory Based Solutions ISSI Milestones • • • • • • • Incorporated - 1988 First Foundry Partnership TSMC - 1990

IS61LV6416L-10T

Contextual Info: ISSI IS61LV6416L 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES NOVEMBER 2001 DESCRIPTION The ISSI IS61LV6416L is a high-speed, 1,048,576-bit • High-speed access time: 8, 10, 12 ns • CMOS low power operation — 250 mW typical operating

IS61LV6416

Contextual Info: ISSI ISSI IS61LV6416 IS61LV6416 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 10, 12, 15, and 20 ns • CMOS low power operation — 250 mW typical operating — 250 µW (typical) standby • TTL compatible interface levels

61LV6416

Abstract: TBA 810 AT IS61LV6416 K-400
Contextual Info: IS61LV6416 IS61LV6416L ISSI 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES JUNE 2003 DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, • High-speed access time: 8, 10, 12 ns • CMOS low power operation — 61LV6416: 75 mW typical operating current

Contextual Info: IS61LV6416 IS61LV6416L ISSI 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES MAY 2004 DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, • High-speed access time: 8, 10, 12 ns • CMOS low power operation — 61LV6416: 75 mW typical operating current

Contextual Info: IS61LV6416 IS61LV6416L ISSI 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES NOVEMBER 2005 DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, • High-speed access time: 8, 10, 12 ns • CMOS low power operation — 61LV6416: 75 mW typical operating current

IS61LV6416-10TLI

Abstract: 61LV6416 IS61LV6416 IS61LV6416-8TL
Contextual Info: ISSI IS61LV6416 IS61LV6416L 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES NOVEMBER 2005 DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, • High-speed access time: 8, 10, 12 ns • CMOS low power operation — 61LV6416: 75 mW typical operating current

Contextual Info: IS61LV6416 IS61LV6416L ISSI 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES AUGUST 2005 DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, • High-speed access time: 8, 10, 12 ns • CMOS low power operation — 61LV6416: 75 mW typical operating current

61LV6416

Abstract: IS61LV6416
Contextual Info: IS61LV6416 IS61LV6416L ISSI 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES OCTOBER 2003 DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, • High-speed access time: 8, 10, 12 ns • CMOS low power operation — 61LV6416: 75 mW typical operating current

Contextual Info: IS61LV6416 IS61LV6416L ISSI 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES APRIL 2004 DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed, • High-speed access time: 8, 10, 12 ns • CMOS low power operation — 61LV6416: 75 mW typical operating current

c9013

Abstract: 84 pin PBGA oscilloscope MTBF TSMC retention memory dc 8069 IS61C1024 IC Data-book Q-16 car radio 14x20 TSOP 8638
Contextual Info: ISSI Integrated Silicon Solution, Inc. Quality and Reliability 1997-1998 An ISO 9001 Company ISSI ® Quality System Manual QUALITY Reliabilty Report 1997-1998 RELIABILITY Integrated Silicon Solution, Inc. An ISO 9001 Company 1997 Integrated Silicon Solution, Inc.

KM62256BLG-7

Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
Contextual Info: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC

TSOP 28 SPI memory Package flash

Abstract: IS61C256AH IS61C3216 IS61C64AH IS61C64B IS61LV256 IS61LV3216 IS61LV3216L IS62C256 IS62C64
Contextual Info: ISSI Celebrating Ten Years 1988 - 1998 Integrated Silicon Solution, Inc. 2231 Lawson Lane • Santa Clara, CA 95054 • 800-379-4774 • Fax: 408-588-0806 e-mail: sales@issi.com • Web: www.issi.com ISSI® Memory Based Solutions Integrated Silicon Solution, Inc.

70241k

Abstract: d5611 61c256 ic 9022 61c64 RELIABILITY REPORT ISSI vacuum tubes CMS 2015 S/TRANSISTOR J 5804 EQUIVALENT 28F010P
Contextual Info: ISSI Integrated Silicon Solution, Inc. Quality and Reliability 1997-1998 An ISO 9001 Company ISSI ® Reliability Report 1997-1998 An ISO 9001 Company 1997 Integrated Silicon Solution, Inc. Integrated Silicon Solution, Inc. • 2231 Lawson Lane • Santa Clara, CA 95054

IS61C256AH

Abstract: IS61C3216 IS61C64AH IS61C64B IS61LV256 IS61LV3216 IS61LV3216L IS62C256 IS62C64 IS62LV256
Contextual Info: ISSI Celebrating Ten Years 1988 - 1998 Integrated Silicon Solution, Inc. 2231 Lawson Lane • Santa Clara, CA 95054 • 800-379-4774 • Fax: 408-588-0806 e-mail: sales@issi.com • Web: www.issi.com ISSI® Memory Based Solutions Integrated Silicon Solution, Inc.

K6X0808C1D-BF55

Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
Contextual Info: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI

IS61LF51232-8

Abstract: IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T
Contextual Info: ISSI * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor # - Connect pin 14 FT pin to Vss IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML

is62c51216al

Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
Contextual Info: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive electronics (ii) networking/telecommunications infrastructure, (iii) industrial/military/medical electronics (iv) mobile communications and digital

Contextual Info: ISSI IS61LV6416 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation — 250 mW typical operating — 250 [l\N (typical) standby • TTL compatible interface levels • Single 3.3V ± 10% power supply

TBA 261

Contextual Info: ISSI IS61LV6416 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY ADV“JANUARY “ :.N 1997 "iT,0N FEATURES DESCRIPTION • High-speed access time: 10, 12, 15, and 20 ns The I S S I IS61LV6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated

Contextual Info: IS 6 1 L V 6 4 1 6 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY ISSI ADVANCE INFORMATION FEBRUARY 1998 FEATURES DESCRIPTION • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation The IS S IIS61LV6416 is a high-speed, 1,048,576-bit static

WINBOND cross reference

Abstract: winbond WINBOND SRAM cross reference CYPRESS SAMSUNG CROSS REFERENCE sram cross reference Winbond Electronics IDT7164 IDT CROSS 64K X 4 SRAM CY7C199
Contextual Info: High-Speed SRAM Cross Reference Guide Density bits 64K Org. (bits) 8K*8 Package Type Company Winbond W2465A UTRON UT6164 ISSI IS61C64AH Cypress 256K 32K*8 CY7C185 Voltage 300-mil DIP X 5V X Speed (ns) SOJ SOP TSOP-I STSOP X 12 X X 10/12/15 X X 15/20/25 X