IT00286 Search Results

diode RL-250

Contextual Info: Ordering number:ENN6130 N-Channel Silicon MOSFET 5LN02M Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2158 0.3 0.2 0.425 [5LN02M] 0.15 3 0.425 2.1 1.250 0 to 0.1

bx 18A

Abstract: 2SJ268 ITR00278 ITR00279 ITR00280 ITR00281 ITR00282
Contextual Info: 注文コード No.N 4 2 3 7 2SJ268 No. 4 2 3 7 三洋半導体ニューズ 61599 新 2SJ268 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。

Contextual Info: 5LN02M Ordering number : EN6130A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 5LN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: 5LN02M Ordering number : EN6130A N-Channel Silicon MOSFET 5LN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

5LN02M

Abstract: D1099
Contextual Info: 5LN02M Ordering number : EN6130A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 5LN02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C