IT07659 Search Results

3LP03M

Abstract: TYP300V
Contextual Info: 3LP03M 注文コード No. N 8 1 5 4 3LP03M P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・高速スイッチング。 ・2.5V 駆動。 ・高静電耐量 TYP300V [ゲート・ソース間保護用片側 Di 内蔵]。

3LP03SS

Contextual Info: 3LP03SS Ordering number : EN8649 P-Channel Silicon MOSFET 3LP03SS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High resistance to damage from ESD TYP 300V [with a protection diode connected between the gate and source].

3LP03S

Abstract: A00104
Contextual Info: 3LP03S Ordering number : ENA0010 P-Channel Silicon MOSFET 3LP03S General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].

Contextual Info: 3LP03M Ordering number : ENN8154 P-Channel Silicon MOSFET 3LP03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].

marking XG

Abstract: sw 8154 if 3LP03M
Contextual Info: 3LP03M Ordering number : ENN8154 P-Channel Silicon MOSFET 3LP03M General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage TYP 300V [Built-in one side diode for protection between Gate-to-Source].

EC4304C

Contextual Info: EC4304C Ordering number : ENN8124 P-Channel Silicon MOSFET EC4304C General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 2.5V drive. High resistance to damage from ESD typ 300V [with a protection diode connected between the gate and source].