IVAX 300 Search Results

2SK2642-01MR

Abstract: 2SK2652 2SK2876-01MR
Contextual Info: MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 - 900 Volts Device Type 2SK2872-01MR 2SK2870-01L.S Maximum Ratinas I d A Pd (W) Voss (V) 450 8 30 450 8 50 8 450 50 Cha •acteristics (IVax.) Package

H7843

Abstract: msap DK-2750 ivax 300 CH-8047 P-2720-093
Contextual Info: IVAX Now ADSL. I N F I N E O N T E C H N O LO G I E S CO R P O R AT E S A L E S O F F I C E S W O R L D W I D E – PA R T LY R E P R E S E N T E D B Y S I E M E N S A G Following parameters can be measured by ITDF: a single-ended configuration on ࡯ Loop resistance to localize short circuits

d74c

Abstract: FSDV 3df s 45 58x58 5CCL MC139
Contextual Info: M INIATURE C O IL S TO KO f r i g n i J i, F r e q .r a n g e Type L ran ge Q T y p . kHz kHz MHz MHz MHz 10 10 0 1 1 0 10 0 “ 1-1-1-1-1“ il i il i 1mH~ 680(iH f& w 75-100 18 - 58pF (E -12 series) (6.2x6.2x6.2mm) IV 5PA 5PAG i i 1 ' H

adsl filter

Abstract: PCB layout for electronic choke n262 marking code ep FIN0146-Y FIN0147-G FIN0153-H FIN0137-Z FIN0138-H FIN0140-C
Contextual Info: Inductive Ferrite Components xDSL Transformers Data Sheet EP 13 xDSL ADSL Interface Transformers B78421-A1638-A3 Application 13,5 max. 12,4 max. • Matched to Infineon IC: PEB4565/4566 Features ■ PTH version upon request Marking 17,2 max. Pin 1 marking

tsa3100j circuit

Abstract: TSA3100J TSA3100G LFT 3A
Contextual Info: TO SH IBA TSA3100GJSA3100J TENTATIVE-RESTRICTIVE DATA TOSHIBA AC SWITCH OPTICALLY ISOLATED AC SWITCH TSA3100G, TSA3100J • R.M.S. On-State Current : It RM S -0-l~3A Repetitive Peak Off-State Voltage : V d r m = 400, 600V Isolation Voltage between Input to Output: 3000V AC (t=lm in.)

RJ12CY202

Abstract: RJ22CL103 RJ22CP504 RJ12CP104 RJ12CY RJ24CX RJ24CW503 RJ12C rj24cw103 RJ22C
Contextual Info: MIL-SPEC NUMBERING SYSTEM Explanation of System Non-Wirewound RJR Styles - High Reliability MIL-R-39035 RJR24 F W 102 P Style N o.-^ ^- Failure Rate % Failures/1,000 Hrs. 60% Confidence M = 1.0% P = 0.1 % R = .01 % Characteristic

SF21G

Abstract: SF23G SF28G
Contextual Info: E SF21G - SF28G TAIWAN SEMICONDUCTOR 2.0 AMPS. Glass Passivated Super Fast Rectifiers DO-15 RoHS COMPLIANCE -S 3 - .m iM i •fr 10.55*1 k'lV .'Wftfii Features a i. U High efficiency, low VF High current capability High reliahilily Hig h s ur9e cu rro nI ca pabi lily

transistor 320v 1000A

Abstract: 2SK2952
Contextual Info: TO SH IBA 2SK2952 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2952 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR APPLICATIONS • • • • Low Drain-Source ON Resistance Rd s (ON) = 0.4 n (Typ.)

424400 60

Abstract: NEC 424400-60 424400 424400 memory 424400V NEC 424400-70
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT ¿¿P D 42S4400, 4 2 4 4 0 0 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE D e s c rip tio n The / jPD42S4400, 424400 are 1,048,576 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.

75182

Abstract: DS8820A
Contextual Info: <T ' 7 S - - l 9 1 SN55182, SN75182 DUAL DIFFERENTIAL LINE RECEIVERS 6 T b l 7 S 4 006235= fl B T i m TEXAS INSTR ( L I N / I NT FC ) 40E ]> 01292, OCTOBER 1972-REVISED SEPTEMBER 1986 SN 55182 . , . J PACKAGE SN 75182 . . . D, J , OR N PACKAGE Single 5-V Supply

6.8-35 k2

Contextual Info: AM D3 A m 7 9 M 5 7 6 A Metering Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant-resistance feed ■ Programmable loop-detect threshold ■ On-chip switching regulator for low-power dissipation ■ Two-wire impedance set by single external

siemens master drive circuit diagram

Abstract: SR flip flop IC toshiba tc110g TC110G jk flip flop to d flip flop conversion SC11C1 JK flip flop IC siemens Nand gate scxc1 SR flip flop IC pin diagram
Contextual Info: SIEM EN S ASIC Product Description SCxC1 Family CMOS Gate Arrays FEATURES • Alternate source of Toshiba TC110G family ■ Densities up to 129,000 raw gates ■ Channelless “ sea of gates” architecture ■ 1.5 firn drawn CMOS technology, scalable to 1.0 /¿m

PD42S17805

Abstract: 4217805
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /ZPD 4 2 S 1 7 8 0 5 ,4 2 178 0 5 16M -B IT DYNAMIC RAM 2 M-WORD BY 8-BIT, EDO Description T h e ¿¿PD42S17805, 4 2 1 7 8 0 5 a re 2 ,0 9 7 ,1 5 2 w o rd s b y 8 b its C M O S d y n a m ic R A M s w ith o p tio n a l E D O ,

1492/LT1493

Contextual Info: rrw m _ LT1492/LT1493 TECHNOLOGY 5MHz, 3V/|lls, Low Pow er Single Supply, D ual a n d Q u a d Precision O p Am ps F€flTUR€S D€SCRIPTIOfl • Gain-Bandwidth Product: 5MHz Typ ■ Slew Rate: 3V/fis Typ ■ Low Supply Current per Amplifier: 0.55mA Max

Contextual Info: / " T L in f iA E _ LT1492/LT1493 TECHNOLOGY 5MHz, 3V/*is, Low Pow er Single Supply, Dual a n d Q u a d Precision O p A m ps FCRTURCS DCSCRIPTIOn • ■ ■ ■ The LT 1492/LT1493 are dual/quad, low power, single sup­ ply precision op amps with 5MHz gain-bandwidth product,

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT ¿¿PP4 2 S 1 7 4 0 5 L , 4 2 1 7 4 0 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO Description The ¿iPD42S17405L, 4217405L are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

KNC 201 15

Abstract: K1503 hp 1502 vga knc 201 39 82C452 CD 1517 intergrated circuit KNC 201 82C322 LIM EMS 4.0 82C631
Contextual Info: CHIPS AND TECHNOLOGIES, INC. 3050 ZÄNKER ROAD. SAN JOSE, CA 95134 408-434-0600 PRELIMINARY SPECIFICATION CHIPS/280 MODEL 70/80 COMPATIBLE CHIPSET 16-, 20-, 25-, & 33-Mhz* * 33M h z t im in g w a v e f o r m s & T-NUMBERS ARE AVAILABLE A u g u s t 9 ,1 9 8 9