IXBA10N300HV Search Results
IXBA10N300HV Datasheets Context Search
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Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA10N300HV IXBH10N300HV VCES = 3000V IC110 = 10A VCE sat 3.2V TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 |
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IXBA10N300HV IXBH10N300HV IC110 O-263HV 100ms 10N300 |