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    IXBH6N170 Search Results

    IXBH6N170 Datasheets (4)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXBH6N170
    		IXYS Discrete IGBTs Original PDF 112.07KB 2
    IXBH6N170
    		IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 12A 75W TO247AD Original PDF 5
    IXBH 6N170
    		IXYS High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor Original PDF 112.06KB 2
    IXBH6N170SN
    		IXYS High Voltage: High Gain BIMOSFET Monolithic Bipolar MOS Transistor Original PDF 112.07KB 2
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    IXBH6N170 Price and Stock

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    IXYS Corporation IXBH6N170

    IGBT 1700V 12A TO-247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBH6N170 Tube 298 1
    • 1 $12.58
    • 10 $12.58
    • 100 $7.59
    • 1000 $6.21
    • 10000 $6.21
    		Buy Now
    Mouser Electronics IXBH6N170 180
    • 1 $11.03
    • 10 $11.02
    • 100 $6.96
    • 1000 $6.21
    • 10000 $6.21
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    TTI IXBH6N170 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $6.15
    • 10000 $6.15
    		Buy Now
    TME IXBH6N170 1
    • 1 $8.02
    • 10 $6.72
    • 100 $6.48
    • 1000 $6.48
    • 10000 $6.48
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    New Advantage Corporation IXBH6N170 436 1
    • 1 -
    • 10 -
    • 100 $18.43
    • 1000 $17.02
    • 10000 $17.02
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    Littelfuse Inc IXBH6N170

    Disc Igbt Bimosfet-High Volt To-247Ad/ Tube |Littelfuse IXBH6N170
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXBH6N170 Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $6.51
    • 10000 $6.51
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    IXBH6N170 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V IXBH6N170 IXBT6N170 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700


    Original     		IXBH6N170 IXBT6N170 O-247 6N170 PDF

    IXBH6N170

    Abstract: IXBT6N170
    Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700


    Original     		IXBH6N170 IXBT6N170 O-247 O-268 6N170 IXBT6N170 PDF

    6N170

    Abstract: IXBH6N170 IXBT6N170 9632ns
    Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700


    Original     		IXBH6N170 IXBT6N170 O-247 6N170 IXBH6N170 IXBT6N170 9632ns PDF