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    IXBX75N170A Price and Stock

    IXYS Corporation IXBX75N170A

    IGBT 1700V 110A 1040W PLUS247
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    DigiKey IXBX75N170A Tube 300
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    • 1000 $37.0275
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    Mouser Electronics IXBX75N170A
    • 1 -
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    Future Electronics IXBX75N170A Tube 26 Weeks 30
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    • 100 $56.33
    • 1000 $56.33
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    TTI IXBX75N170A Tube 300
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    • 1000 $37.03
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    TME IXBX75N170A 8 1
    • 1 $65.51
    • 10 $54.95
    • 100 $53.04
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    New Advantage Corporation IXBX75N170A 24 1
    • 1 -
    • 10 $108.5
    • 100 $101.27
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    Littelfuse Inc IXBX75N170A

    Disc Igbt Bimosfet-High Volt To-247Ad/ Tube |Littelfuse IXBX75N170A
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    Newark IXBX75N170A Bulk 300
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    • 100 $38.81
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    RS IXBX75N170A Bulk 8 Weeks 30
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    • 100 $57.27
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    IXBX75N170A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXBX75N170A IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 110A 1040W PLUS247 Original PDF

    IXBX75N170A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC90 IXBK75N170A IXBX75N170A VCE sat tfi(typ) = = ≤ = 1700V 65A 6.00V 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBK75N170A IXBX75N170A O-264 PLUS247TM Tstg60V 75N170A PDF

    IXBK75N170A

    Abstract: IXBX75N170 PLUS247 IXBX75N170A G1040 100Z
    Text: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170A IXBX75N170A VCES IC90 VCE sat tfi(typ) = = ≤ = 1700V 65A 6.00V 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBK75N170A IXBX75N170A O-264 PLUS247TM 75N170A IXBK75N170A IXBX75N170 PLUS247 IXBX75N170A G1040 100Z PDF