IXDR 35N60 BD1 Search Results
IXDR 35N60 BD1 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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IXDR 35N60 BD1 |
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IGBT Chip, High Speed, Low Saturation Voltage IGBT with optional Diode | Original | 78.27KB | 4 | ||
IXDR35N60BD1 |
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IGBT Discretes: NPT IGBT | Original | 78.27KB | 4 |
IXDR 35N60 BD1 Price and Stock
IXYS Corporation IXDR35N60BD1IGBT NPT 600V 38A ISOPLUS247 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXDR35N60BD1 | Tube |
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IXDR35N60BD1 | 54 | 1 |
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IXDR35N60BD1 | 808 |
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IXDR 35N60 BD1 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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35N60
Abstract: 35N60BD1
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Original |
35N60 247TM IXDR30N60BD1 35N60BD1 | |
35N60Contextual Info: IXDR 35N60 BD1 VCES = 600 V = 38 A IC25 VCE sat typ = 2.2 V IGBT with optional Diode High Speed, Low Saturation Voltage ISOPLUS 247TM C G G C E E Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 20 kW 600 |
Original |
35N60 247TM IXDR30N60BD1 | |
Contextual Info: IXDR 35N60 BD1 VCES = 600 V IC25 = 38 A VCE sat typ = 2.2 V IGBT with optional Diode High Speed, Low Saturation Voltage ISOPLUS 247TM C G G C E E G = Gate, C = Collector , Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V Features ● ● VCGR TJ = 25°C to 150°C; RGE = 20 kΩ |
Original |
35N60 247TM IXDR30N60BD1 | |
35N60
Abstract: 30N120 75N120 ixys ixdn 75 n 120 20n60 IXDN75N120 IXDH30N60 55N120 20N60 to220 ixdn55n
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Original |
O-263 O-247 20N60 35N60 STO-227 O-268 247TM O-220 20N120 30N120 75N120 ixys ixdn 75 n 120 IXDN75N120 IXDH30N60 55N120 20N60 to220 ixdn55n |