IXFN 80N50P Search Results

IXFN 80N50P Price and Stock

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Littelfuse Inc IXFN80N50P MOSFET N-CH 500V 66A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN80N50P	Tube	126		1	1 $34.54 10 $25.548 100 $22.5384 1000 $22.5384 10000 $22.5384	Buy Now
Verical	IXFN80N50P		6		2	1 - 10 $23.9199 100 $23.9199 1000 $23.9199 10000 $23.9199	Buy Now
Newark	IXFN80N50P	Bulk	52		1	1 $21.22 10 $21.22 100 $21.22 1000 $21.22 10000 $21.22	Buy Now
RS	IXFN80N50P	Bulk		8 Weeks	300	1 - 10 - 100 - 1000 $33.12 10000 $32.07	Get Quote
IXYS Corporation IXFN80N50P MOSFET Modules 500V 80A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFN80N50P		672			1 $31.88 10 $24.16 100 $22.53 1000 $22.53 10000 $22.53	Buy Now
Quest Components	IXFN80N50P		56			1 $39.072 10 $39.072 100 $33.2112 1000 $33.2112 10000 $33.2112	Buy Now
TTI	IXFN80N50P	Tube			300	1 - 10 - 100 - 1000 $30.05 10000 $30.05	Buy Now
New Advantage Corporation	IXFN80N50P		290		1	1 - 10 $27.99 100 $27.99 1000 $27.99 10000 $27.99	Buy Now
Vyrian	IXFN80N50P		159			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IXFN 80N50P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
IXFN80N50P		IXYS	PolarHV HiPerFET Power MOSFET		Original	PDF	124.21KB	5

IXFN 80N50P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
80N50P Abstract: IXFN 80N50P E153432 Contextual Info: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80N50P 80N50P IXFN 80N50P E153432	PDF
Contextual Info: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80N50P OT-227 E153432 405B2	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous	Original	80N50P	PDF
80N50 Abstract: 80N50P IXFN 80N50P Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous	Original	80N50P 80N50 80N50P IXFN 80N50P	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF