IXFX Search Results
IXFX Price and Stock
Littelfuse Inc IXFX140N30PMOSFET N-CH 300V 140A PLUS247-3 |
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IXFX140N30P | Tube | 951 | 1 |
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Littelfuse Inc IXFX64N60PMOSFET N-CH 600V 64A PLUS247-3 |
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IXFX64N60P | Tube | 787 | 1 |
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Littelfuse Inc IXFX180N25TMOSFET N-CH 250V 180A PLUS247-3 |
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IXFX180N25T | Tube | 501 | 1 |
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Littelfuse Inc IXFX300N20X3MOSFET N-CH 200V 300A PLUS247-3 |
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IXFX300N20X3 | Tube | 451 | 1 |
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Littelfuse Inc IXFX40N90PMOSFET N-CH 900V 40A PLUS247-3 |
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IXFX40N90P | Tube | 360 | 1 |
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IXFX40N90P | Bulk | 300 |
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IXFX Datasheets (115)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IXFX100N25 |
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250V HiPerFET power MOSFET | Original | 98.1KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX100N65X2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 100A PLUS247 | Original | 206.86KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX120N20 |
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200V HiPerFET power MOSFET | Original | 47.88KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX120N20 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 120A PLUS247 | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX120N25 |
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250V HiPerFET power MOSFET | Original | 98.73KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX120N25P |
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PolarHT HiPerFET Power MOSFET | Original | 141.57KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX120N30P3 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 120A TO-247 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX120N30T |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 120A 300V PLUS247 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX120N65X2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 120A PLUS247 | Original | 207.87KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX12N90Q |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 12A PLUS247 | Original | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX140N25T |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 140A 250V PLUS247 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX140N30P |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 140A PLUS 247 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX14N100 |
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1000V HiPerFET power MOSFET | Original | 117.71KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX150N15 |
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150V HiPerFET power MOSFET | Original | 47.78KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IXFX150N30P3 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 150A TO-247 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX15N100 |
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1000V HiPerFET power MOSFET | Original | 117.71KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX160N30T |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 160A 300V PLUS247 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX16N90 |
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HiPerFET Power MOSFET | Original | 271.64KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX170N20P |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 170A PLUS247 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX170N20T |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 170A 200V PLUS247 | Original | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFX Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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34N80
Abstract: IXFN34N80 ixfx34n80
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34N80 247TM 34N80 IXFN34N80 ixfx34n80 | |
62n25
Abstract: 62n25 mosfet 62n2 247TM
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62N25 247TM O-264 728B1 62n25 62n25 mosfet 62n2 247TM | |
120N25
Abstract: ID104
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120N25 ID104 247TM 728B1 120N25 ID104 | |
100N25
Abstract: ID104
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100N25 ID104 247TM capa26 100N25 ID104 | |
32N50Q
Abstract: 125OC
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32N50Q 247TM 125OC 728B1 123B1 728B1 065B1 32N50Q 125OC | |
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Contextual Info: IXFX 21N100F IXFK 21N100F HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching VDSS = 1000 V ID25 = 21 A RDS on = 0.50 Ω trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr PLUS 247TM (IXFX) |
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21N100F 247TM 728B1 | |
IXFK240N15T2
Abstract: IXFX240N15T2 PLUS247
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IXFK240N15T2 IXFX240N15T2 140ns O-264 240N15T2 IXFK240N15T2 IXFX240N15T2 PLUS247 | |
80N50P
Abstract: IXFK 80N50P PLUS247
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80N50P O-264 80N50P IXFK 80N50P PLUS247 | |
200N10P
Abstract: IXFN200N10P TO-227B IXFX200N10P PLUS247 IXFN200N10P IXYS
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200N10P OT-227 E153432 IXFX200N10P IXFN200N10P 200N10P IXFN200N10P TO-227B IXFX200N10P PLUS247 IXFN200N10P IXYS | |
360N10T
Abstract: PLUS-247 IXFK360N10T IXFX360N10T PLUS247
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IXFK360N10T IXFX360N10T 130ns O-264 360N10T PLUS-247 IXFK360N10T IXFX360N10T PLUS247 | |
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Contextual Info: Advanced Technical Information IXFX 90N30 IXFK 90N30 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous Transient |
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90N30 90N30 ID104 247TM O-264 | |
Siemens DIODE E 1240
Abstract: IXFK80N60P3 IXFX80N60P3
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IXFK80N60P3 IXFX80N60P3 O-264 250ns PLUS247 80N60P3 Siemens DIODE E 1240 IXFX80N60P3 | |
120N20Contextual Info: IXFX 120N20 HiPerFET TM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = = = 200 V 120 A 17 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 200 200 V V VGS |
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120N20 120N20 | |
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Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 24N100 IXFX 24N100 VDSS ID25 RDS on Single MOSFET Die Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Maximum Ratings VGS VGSM Continuous Transient ID25 IDM IAR 1000 |
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24N100 24N100 247TM O-264 | |
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16N90Contextual Info: IXFH16N90 IXFX16N90 HiPerFET Power MOSFETs V DSS I D25 D DS on N-Channel Enhancement Mode High dv/dt, Lowtrr, HDMOS™ Family = 900 V = 16 A = 0.65 Q trr < 200 ns Prelim inary data Symbol V DSS v™ V GS v GS* Test Conditions T, = 25°C to 150°C T,J = 25°C to 150°C;’ RGS |
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IXFH16N90 IXFX16N90 O-247 247TM 16N90 | |
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Contextual Info: Advance Technical Information IXFK260N17T IXFX260N17T GigaMOSTM Power MOSFET VDSS ID25 = = 170V 260A Ω 6.5mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings |
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IXFK260N17T IXFX260N17T 200ns O-264 -55ig. 260N17T | |
120N20Contextual Info: HiPerFET TM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ |
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120N20 120N20 ID104 247TM O-264 125OC 728B1 | |
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Contextual Info: IXFX 1806 HiPerFET TM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = = = 500 V 53 A 90 mW trr £ 250 ns Preliminary data sheet Maximum Ratings PLUS 247TM (IXFX) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 500 |
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247TM | |
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Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 75 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings |
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80N50P 80N50P O-264 PLUS247 | |
z 607 maContextual Info: IXFK 24N100 IXFX 24N100 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings VGS VGSM Continuous Transient ID25 IDM IAR 1000 1000 |
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24N100 24N100 247TM O-264 z 607 ma | |
64N50Contextual Info: Advance Technical Information IXFK64N50Q3 IXFX64N50Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 500V 64A Ω 85mΩ 250ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings |
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O-264) O-264 PLUS247 PLUS247) IXFK64N50Q3 IXFX64N50Q3 250ns O-264 PLUS247 64N50 | |
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Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 180N06 IXFX 180N06 VDSS ID25 RDS on Single Die MOSFET = 60 V = 180 A = 5 mW trr £ 200 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS |
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180N06 180N06 247TM O-264 | |
ixfk32n80Contextual Info: Preliminary Technical Information IXFK32N80Q3 IXFX32N80Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ |
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O-264) O-264 PLUS247 PLUS247) IXFK32N80Q3 IXFX32N80Q3 300ns O-264 ixfk32n80 | |
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Contextual Info: Advance Technical Information IXFK24N100Q3 IXFX24N100Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 1000V 24A Ω 440mΩ 300ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings |
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IXFK24N100Q3 IXFX24N100Q3 300ns O-264 PLUS247 24N100Q3 | |