IXGH20 Search Results

20N50A

Abstract: 20n50 IXGH20N50 f sss 20n60 sss 20n60
Contextual Info: 4686226 ' I X Y S CORP 03 DE I •-§tiñ b SEb □□□□5E4 T~ 3 T — t £ T 1~~ £} IXGH20N50, 60 IXGM20N50, 60 20 A M PS, 5 0 0 -6 0 0 VOLTS M AXIM UM RATINGS Sym. IXGH20N50 IXGM20N50 IXGH20N60 IXGM20N60 Unit Drain-Source Voltage 1) Vdss 500 600 Vdc

Contextual Info: PRELIMINARY DATA SHEET vCES IXGH20N30 IXGH20N30S HiPerFAST IGBT ^C25 VCE sat typ t < Symbol Test Conditions VCES ^ VCGR vGES VœM > Maximum Ratings = 25°C to 150°C 300 V Tj = 25°C to 150°C; RGE = 1 MO 300 V Continuous ±20 V Transient ±30 V Tc = 25° C

IXGH20N50

Abstract: ixgh20n50u1 rectifier d 355 n 2000 ic 3404A
Contextual Info: I X Y S CORP 1ÖE D • ODOObTS 4 ■ T - 3 V 13 □IXYS A D V A N C E T E C H N IC A L D A TA S H E E T Data Sheet No. 3404A _ MOS1GBT with Anti-Parallel Rectifier March 1989 PART NUMBER IXGH20N50U1 F E A T U R E S :_

Contextual Info: GenX3TM 1200V IGBTs VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXGH20N50

Abstract: IXGH20N50U1 ic 3404A N-150 100V
Contextual Info: I X Y S CORP 1ÛE ß 4bôb22b OOOOLTS 4 ^ - 1 3 □IXYS ADVANCE TECHNICAL DATA S H E E T Data Sheet No. 3404A March 1989 PART NUMBER MOSIGBT with Anti-Parallel Rectifier IXGH20N50U1 • High Voltage MOSIGBT and Anti-Parallel Rectifier in One Package

IXGH20N60BU1

Abstract: IXGH20N60BU1S HIPERFAST IGBT WITH DIODE IXGH20N60BU1 TO-247 IXYS DIODE SMD GEM TAA 521 D
Contextual Info: □ IXYS Preliminary data IXGH20N60BU1 IXGH20N60BU1S HiPerFAST IGBT with Diode V CES ^C 25 V CE(sat)typ Combi Pack *fi(typ) = 600 V = 40 A = 1.7 V = 100 ns TO-247 SMD* Symbol Test Conditions V v CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i

qe R 521 smd

Contextual Info: P re lim in a ry data <> IXGH20N60B IXGH20N60BS HiPerFAST IGBT Symbol Test Conditions V CES Tj = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 Mi2 vC0R vGES •« Tc = 25°C Tc = 90°C Tc = 25°C, 1 ms U ■c. SSOA RBSOA p c 600 600 VGE= 15 V, TVJ = 125°C, RG= 22 O

20N120A3

Abstract: IXGH24N120C3 20N120 G20N120
Contextual Info: Preliminary Technical Information VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGH20N120A3 IXGP20N120A3 GenX3TM 1200V IGBT Ultra-low Vsat PT IGBTs for up to 3 kHz switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

2355ZankerRd

Contextual Info: IflE D I X Y S CORP 4b ö b 2 2 b OOOOb'n 1 ~T-2P\ -<2> □IXYS ADVANCE TECHNICAL DATA SHEET* March 1989 PART NUMBER Data Sheet No. 3407A MOSIGBT with Anti-Parallel Rectifier IXGH20N100U1 FEATURES: • High Voltage M OSIGBT and Anti-Parallel Rectifier in One Package

G20N120

Abstract: IXGA20N120A3 IXGP20N120A3 IXGH20N120A3
Contextual Info: GenX3TM 1200V IGBTs VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: ÏXYS HiPerFAST IGBT IXGH20N30 VCES C25 VCE sat typ t fi(typ) Symbol Test Conditions V T j = 2 5 °C to 150°C Maximum Ratings 300 V 300 V Continuous +20 V Transient 130 V T,J = 2 5 °C to 150J C; FLO 1 M fi Tc -2 5 C 40 A ^C9G T c = 90° C 20 A ^CM T c = 25° C, 1 ms

IXGH20N60BU1

Abstract: TO-247 AD
Contextual Info: IXGH20N60BU1 HiPerFASTTM IGBT with Diode Combi Pack VCES IC 25 VCE(sat)typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM

20n50

Abstract: 20N50A IXGH20N50 c 20n50
Contextual Info: ' 4686226 I X Y S CORP 03 D E I 4hflbaEti ODDDSSM T • "” T~ 3 T —t £ o IXGH20N50, 60 IXGM20N50, 60 20 A M PS, 5 0 0 -6 0 0 VO LTS M A X IM U M RA TIN G S Parameter IXGH20N50 IXGM20N50 Sym. Drain-Gate Voltage Rgs 1-OMii) (1) = 600 Vd g r 600 Vdc Vg s

20n80

Abstract: 20N90 20N80A 20N100
Contextual Info: 4686226 I X Y S CORP ¡J3 ß T | MhfibSEk O O D G E S l 3 T~ 37-13 IXGH20N80, 90, 100 IXGM20N80, 90, 100 * 2 0 A M PS, 8 0 0 -1 0 0 0 VOLTS MAXIMUM RATINGS Unit Drain-Source Voltage 1 Vd s s 800 900 1000 Vdc Drain-Gate Voltage (Rg s = 10M Ü) (1) Vd g r

Contextual Info: Advance Technical Information GenX3TM 1000V IGBTs VCES = 1000V IC90 = 20A VCE sat ≤ 2.3V IXGA20N100A3 IXGP20N100A3 IXGH20N100A3 Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

B81 diode smd

Abstract: b81 004 IXGH20N60BU1 U 244
Contextual Info: HiPerFAST IGBT with Diode IXGH20N60BU1 IXGH20N60BU1S v CES ^C25 v CE sat typ *« = = = = 600 40 1.7 100 V A V ns P relim inary data Sym bol Test C onditions v CES v CGR T, = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 M£2 600 V Maximum Ratings

10A600V

Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
Contextual Info: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU

qe R 521 smd

Abstract: smd mk ixgh20n60b
Contextual Info: □ IXYS P re lim in a ry data HIPerFAST IGBT Symbol Test Conditions V v CGR T j = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 v v GEM Continuous Transient ^C25 ^C90 ' cm SSOA RBSOA Pc IXGH20N60B IXGH20N60BS « Maximum Ratings 600 600 V V ±20 ±30

robot control

Abstract: IXGH20N30
Contextual Info: HiPerFASTTM IGBT IXGH20N30 VCES IC25 VCE sat typ tfi(typ) = 300 V = 40 A = 1.45 V = 180 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient

20N100A

Abstract: IXGH20N100A IXGH20N100A3 IXGP20N100A3
Contextual Info: Advance Technical Information GenX3TM 1000V IGBTs VCES = 1000V IC90 = 20A VCE sat ≤ 2.3V IXGA20N100A3 IXGP20N100A3 IXGH20N100A3 Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

IXGH20N60B

Contextual Info: HiPerFAST IGBT IXGH20N60B IXGH20N60BS ÇC VCES ^C25 v CE sat typ tfi = = = = 600 V 40 A 1.7 V 100 ns Preliminary data Symbol Test Conditions v CES Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 M fi 600 V v' GES Continuous ±20 V v GEM Transient

IXGH20N140C3H1

Abstract: IXGT20N140C3H1 IC100 GenX3TM
Contextual Info: Advance Technical Information GenX3TM 1400V IGBTs w/ Diode IXGH20N140C3H1 IXGT20N140C3H1 High-Speed PT IGBTs for 20 - 50 kHz Switching VCES = IC100 = VCE sat ≤ tfi(typ) = 1400V 20A 5.0V 32ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR

Contextual Info: Advance Technical Information GenX3TM 1400V IGBTs w/ Diode IXGH20N140C3H1 IXGT20N140C3H1 High-Speed PT IGBTs for 20 - 50 kHz Switching VCES = IC100 = VCE sat ≤ tfi(typ) = 1400V 20A 5.0V 32ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR

K25 1-GATE

Abstract: 3407A IXGH20N100U1 UPS DL-P ICM72
Contextual Info: I X Y S Mbñbaab OOODb*n 1 IñE D CORP □IXYS AD V A N CE TECH N ICAL DATA SHEET* March 1989 PART NUMBER Data Sheet No. 3407A MOSIGBT with Anti-Parallel Rectifier IXGH20N100U1 F EAT U RES: • High Voltage M O SIG B T and Anti-Parallel Rectifier in One Package