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    IXGQ90N33TCD1

    Abstract: ixgq90n33 IXGA90N33TC 90N33TCD1 90n33 90N33TC IXGQ90N33TC IXGQ90N33TCD
    Contextual Info: Trench Gate, High Speed, IGBTs IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1 For PDP Applications VCES = ICP = VCE sat ≤ 330V 360A 1.80V 90N33TCD1 90N33TC Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 330 V VGES VGEM Continuous Transient ±20


    Original     		IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1 90N33TC 90N33TCD1 IC110 O-263 062in. 5-30-07-C IXGQ90N33TCD1 ixgq90n33 90N33TCD1 90n33 90N33TC IXGQ90N33TCD PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF