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    IXTA1N200P3HV Search Results

    IXTA1N200P3HV Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTA1N200P3HV
    		IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 2000V 1A TO-263HV Original PDF 271.04KB
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    IXTA1N200P3HV Price and Stock

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    Littelfuse Inc IXTA1N200P3HV

    MOSFET N-CH 2000V 1A TO263
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    DigiKey IXTA1N200P3HV Tube 2,740 1
    • 1 $9.53
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    Newark IXTA1N200P3HV Bulk 26,517 1
    • 1 $6.53
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    • 100 $5.23
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    Littelfuse Inc IXTA1N200P3HV-TRL

    MOSFET N-CH 2000V 1A TO263HV
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    DigiKey () IXTA1N200P3HV-TRL Digi-Reel 89 1
    • 1 $10.48
    • 10 $7.23
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    IXTA1N200P3HV-TRL Cut Tape 89 1
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    IXTA1N200P3HV-TRL Reel 800
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    Newark IXTA1N200P3HV-TRL Reel 800 800
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    TTI IXTA1N200P3HV-TRL Reel 800
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    IXYS Corporation IXTA1N200P3HV

    MOSFETs 2000V/1A HV Power MOSFET, TO-263HV
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    Mouser Electronics IXTA1N200P3HV 566
    • 1 $9.34
    • 10 $8.58
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    Future Electronics IXTA1N200P3HV Tube 24 Weeks 50
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    Bristol Electronics IXTA1N200P3HV 9
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    TTI IXTA1N200P3HV Tube 300
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    TME IXTA1N200P3HV 1
    • 1 $8.28
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    Vyrian IXTA1N200P3HV 4,990
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    IXYS Corporation IXTA1N200P3HV-TRL

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    New Advantage Corporation IXTA1N200P3HV-TRL 1,600 1
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    IXTA1N200P3HV Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    T1N200

    Contextual Info: Advance Technical Information IXTA1N200P3HV IXTH1N200P3 High Voltage Power MOSFETs VDSS ID25 = 2000V = 1.0A   40 RDS on N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 2000


    Original     		IXTA1N200P3HV IXTH1N200P3 O-263HV ID110 100ms 1N200P3 T1N200 PDF

    Contextual Info: Preliminary Technical Information IXTA1N200P3HV IXTH1N200P3HV IXTH1N200P3 High Voltage Power MOSFET VDSS ID25 = 2000V = 1.0A   40 RDS on N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C


    Original     		IXTA1N200P3HV IXTH1N200P3HV IXTH1N200P3 O-263HV ID110 100ms PDF

    Contextual Info: Advance Technical Information IXTA1N200P3HV IXTH1N200P3 High Voltage Power MOSFET VDSS ID25 = 2000V = 1.0A   40 RDS on N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 2000


    Original     		IXTA1N200P3HV IXTH1N200P3 O-263HV ID110 100ms 1N200P3 PDF