IXTE10N60X4 Search Results

Contextual Info: i X y s lflE D coRP 000Db32 □ IX Y S S 1-3^1-13 IXTE10N60X4 MAXIMUM RATINGS PER DEVICE Parameter Sym. IXTE10N60X4 Drain-Source Voltage (1) Voss 600 Vdc Drain-Gate Voltage (Rqs = 1.0MO) (1) Vdgr 600 Vdc Vqs ±20 Vgsm ±30 Vdc V Id 10 Ado Drain Current Pulsed (3)

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Abstract: megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE
Contextual Info: I X Y S CORP 16E 5 IS 4b fit55t Q000563 H H§ I T t-m MODULESand PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested

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Abstract: megamos 13 megamos IXGE75N100Z ID 48 Megamos
Contextual Info: I X Y S CORP 16E 5 IS 4 b fit55t Q000563 H H§ ITt-m MODULES and PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested