IXTJ4N150 Search Results
IXTJ4N150 Price and Stock
Littelfuse Inc IXTJ4N150MOSFET N-CH 1500V 2.5A TO247 |
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IXTJ4N150 | Tube | 300 | 1 |
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IXTJ4N150 | Bulk | 300 |
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IXYS Corporation IXTJ4N150MOSFETs High Voltage Power MOSFET |
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IXTJ4N150 | Tube | 300 |
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IXTJ4N150 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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IXTJ4N150 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 2.5A ISOTO-247 | Original | 5 |
IXTJ4N150 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Advance Technical Information IXTJ4N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 2.5A 6Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings |
Original |
IXTJ4N150 O-247TM E153432 100ms 4N150 02-23-12-B | |
Contextual Info: IXTJ4N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 2.5A 6Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 |
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IXTJ4N150 O-247TM E153432 100ms 4N150 09-12-12-C | |
Contextual Info: Preliminary Technical Information IXTJ4N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 2.5A 6Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings |
Original |
IXTJ4N150 O-247TM E153432 100ms 4N150 09-12-12-C |