IXTP IXTP IXTP IXTP Search Results
IXTP IXTP IXTP IXTP Price and Stock
IXYS Corporation IXTP26P20PMOSFETs -26.0 Amps -200V 0.170 Rds |
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IXTP26P20P | 6,362 |
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IXYS Corporation IXTP08N120PMOSFETs 0.8 Amps 1200V 25 Rds |
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IXTP08N120P | 3,218 |
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IXYS Corporation IXTP32P20TMOSFETs TenchP Power MOSFET |
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IXTP32P20T | 2,888 |
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IXYS Corporation IXTP1N120PMOSFETs 1 Amps 1200V 20 Rds |
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IXTP1N120P | 1,618 |
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IXYS Corporation IXTP96P085TMOSFETs -96 Amps -85V 0.013 Rds |
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IXTP96P085T | 1,363 |
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IXTP IXTP IXTP IXTP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IXTP IXTP IXTP IXTP
Abstract: 2R4N50P
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2R4N50P IXTP IXTP IXTP IXTP 2R4N50P | |
98844Contextual Info: High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt VDSS ID25 RDS on 1200 V 1100 V 3A 3A 4.5 Ω 4.0 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
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3N120 3N110 3N110 O-220 O-263 125OC 98844 | |
3n120
Abstract: 125OC 3N110 IXTP3N120
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3N120 3N110 O-220 VDSS40 125OC 3n120 125OC 3N110 IXTP3N120 | |
IXTP50N20PMContextual Info: PolarHTTM Power MOSFET IXTP 50N20PM VDSS ID25 RDS on (Electrically Isolated Tab) = 200 V = 20 A ≤ 60 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Maximum Ratings OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C |
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50N20PM O-220 50N20P 02-16-06-E IXTP50N20PM | |
3n120
Abstract: 3N110 98844
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3N120 3N110 3N110 O-220 O-263 98844 | |
Contextual Info: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM IXTP 180N055T IXTQ 180N055T VDSS = 55 V ID25 = 180 A Ω RDS on = 4.0 mΩ TO-220 (IXTP) Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous ±20 V ID25 TC = 25°C; Note 1 |
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ISOPLUS220TM 180N055T 180N055T O-220 O-220) 123B1 728B1 065B1 IXTP180N055T | |
4N60P
Abstract: IXTA4N60P IXTP4N60P IXTY4N60P
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4N60P O-220 O-263 4N60P IXTA4N60P IXTP4N60P IXTY4N60P | |
5n60pContextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N60P IXTP 5N60P VDSS = 600 = 5 ID25 RDS on ≤ 1.6 V A W N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR VGSS VGSM Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ |
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5N60P O-220 O-263 O-263 O-220) 405B2 5n60p | |
3N120
Abstract: transistor tl 187 125OC 3N110 IXTP IXTP IXTP IXTP
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3N120 3N110 O-220 125OC 728B1 3N120 transistor tl 187 125OC 3N110 IXTP IXTP IXTP IXTP | |
100N055
Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D
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02N50D 01N100D O-220AB O-247 20N60C 40N60C 75N60C 45N80C 100N055 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D | |
IXTP16N50PM
Abstract: 16N50 16N50P
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IXTP16N50PM 16N50P 4-30-09-C IXTP16N50PM 16N50 | |
IXTP18N60PM
Abstract: 18N60P
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IXTP18N60PM O-220 18N60P 8-21-06-B IXTP18N60PM | |
IXTP22N50PM
Abstract: 22N50 22N50P
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IXTP22N50PM 22N50P 1-09-A IXTP22N50PM 22N50 | |
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET IXTA7N60PM IXTP7N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600V = 4A Ω ≤ 1.1Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol |
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IXTA7N60PM IXTP7N60PM O-220 7N60P 06-17-08-D | |
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IXTA120P065T
Abstract: IXTH120P065T IXTH120 120P065T IXTP120P065T P-CHANNEL 25A TO-247 POWER MOSFET
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IXTA120P065T IXTP120P065T IXTH120P065T O-263 O-220 IXTA120P065T 120P065T IXTH120P065T IXTH120 IXTP120P065T P-CHANNEL 25A TO-247 POWER MOSFET | |
Contextual Info: Advance Technical Information IXTA64N10L2 IXTP64N10L2 IXTH64N10L2 LinearL2TM Power MOSFETs w/Extended FBSOA VDSS ID25 = 100V = 64A 32m RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-263AA (IXTA) G S D (Tab) TO-220AB (IXTP) |
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IXTA64N10L2 IXTP64N10L2 IXTH64N10L2 O-263AA O-220AB O-247 tN10L2 O-247 O-220 | |
IXTP12N50PM
Abstract: 12n50p d1518
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IXTP12N50PM 300ns O-220 12N50P 4-14-08-D IXTP12N50PM d1518 | |
IXTP12N50PMContextual Info: PolarTM Power MOSFET VDSS ID25 IXTP12N50PM RDS on (Electrically Isolated Tab) trr = 500V = 6A Ω ≤ 500mΩ ≤ 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings |
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IXTP12N50PM 300ns O-220 12N50P 4-14-08-D IXTP12N50PM | |
3N60PContextual Info: Advance Technical Information IXTA 3N60P IXTP 3N60P IXTY 3N60P PolarHVTM Power MOSFET VDSS ID25 RDS on = 600 = 2.8 ≤ 2.8 V A Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C |
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3N60P 405B2 3N60P | |
IXTH76P10T
Abstract: IXTA76P10T VDSS -60 RDS 0,50 ID 1,8 A IXTP76P10T
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IXTA76P10T IXTP76P10T IXTH76P10T O-263 O-220AB O-247 IXTA76P10T 76P10T IXTH76P10T VDSS -60 RDS 0,50 ID 1,8 A IXTP76P10T | |
IXTU1N80P
Abstract: T1N80 1N80P
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O-263 IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P O-251 O-220 IXTU1N80P T1N80 1N80P | |
Contextual Info: TrenchPTM Power MOSFET VDSS ID25 IXTA120P065T IXTP120P065T IXTH120P065T = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated - 65V - 120A Ω 10mΩ TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
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IXTA120P065T IXTP120P065T IXTH120P065T O-263 O-220AB O-247 IXTA120P065T 120P065T | |
Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTP60N10TM = 100V = 33A Ω ≤ 19mΩ RDS on N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 W/ FORMED LEAD (IXTP.M) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C |
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IXTP60N10TM O-220 60N10T 7-08-A | |
Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTP64N055T IXTY64N055T VDSS ID25 = = RDS on ≤ 55 V 64 A Ω 13 mΩ N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) G Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C |
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IXTP64N055T IXTY64N055T O-220 O-252 64N055T |