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    IXTT170N10P Search Results

    IXTT170N10P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTT170N10P
    		IXYS Discrete MOSFETs: Standard N-channel Types Original PDF 634.02KB 5
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    IXTT170N10P Price and Stock

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    Littelfuse Inc IXTT170N10P

    MOSFET N-CH 100V 170A TO268
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    DigiKey IXTT170N10P Tube 1
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    Littelfuse Inc IXTT170N10P-TR

    MOSFET N-CH 100V 170A TO268
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    DigiKey IXTT170N10P-TR Reel 400
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    Newark IXTT170N10P-TR Reel 400
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    IXYS Corporation IXTT170N10P

    MOSFETs 170 Amps 100V 0.009 Ohm Rds
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    Mouser Electronics IXTT170N10P
    • 1 $13.76
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    Newark IXTT170N10P Bulk 1
    • 1 $13.76
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    TTI IXTT170N10P Tube 300
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    TME IXTT170N10P 292 1
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    New Advantage Corporation IXTT170N10P 318 1
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    IXYS Corporation IXTT170N10P-TR

    MOSFETs IXTT170N10P TR
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    Mouser Electronics IXTT170N10P-TR
    • 1 $11.89
    • 10 $10.44
    • 100 $9.03
    • 1000 $7.77
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    IXTT170N10P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTQ170N10P

    Abstract: IXTK170N10P IXTT170N10P
    Contextual Info: IXTT170N10P IXTQ170N10P IXTK170N10P PolarTM Power MOSFET VDSS ID25 = 100V = 170A ≤ 9mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S Tab TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXTT170N10P IXTQ170N10P IXTK170N10P O-268 IXTT170N10P 170N10P 01-07-10-C IXTQ170N10P IXTK170N10P PDF

    Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTT170N10P IXTQ170N10P IXTK170N10P = 100V = 170A ≤ 9mΩ Ω RDS on TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Tab TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXTT170N10P IXTQ170N10P IXTK170N10P O-268 IXTT170N10P 170N10P 01-07-10-C PDF