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    IXTU05N Search Results

    IXTU05N Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTU05N100
    		IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1000V 750MA TO-251 Original PDF 155.95KB
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    IXTU05N Price and Stock

    IXYS Corporation

    IXYS Corporation IXTU05N100

    MOSFET N-CH 1000V 750MA TO251
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    DigiKey IXTU05N100 Tube 75
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    Mouser Electronics IXTU05N100
    • 1 $2.83
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    IXYS Corporation IXTU05N120

    MOSFET N-CH 1200V 500MA TO251
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    DigiKey IXTU05N120 Tube 75
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    IXTU05N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: VDSS ID25 IXTU05N100 IXTY05N100 High Voltage Power MOSFET = = ≤ RDS on 1000V 750mA Ω 17Ω N-Channel Enhancement Mode Avalanche Rated TO-251 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTU05N100 IXTY05N100 750mA O-251 05N100M PDF

    Contextual Info: High Voltage Power MOSFET IXTU05N100 IXTY05N100 VDSS ID25 = =  RDS on 1000V 750mA  17 N-Channel Enhancement Mode Avalanche Rated TO-251 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M


    Original     		IXTU05N100 IXTY05N100 750mA O-251 100ms 05N100 3-14-A PDF

    IXTY05N100

    Abstract: IXTU05N10 IXTU 1000V IXTU05N
    Contextual Info: High Voltage Power MOSFET IXTU05N100 IXTY05N100 VDSS ID25 = = ≤ RDS on 1000V 750mA Ω 17Ω N-Channel Enhancement Mode Avalanche Rated TO-251 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000


    Original     		IXTU05N100 IXTY05N100 750mA O-251 05N100M IXTY05N100 IXTU05N10 IXTU 1000V IXTU05N PDF