LBA716

Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division

IXEP1400

Abstract: CPC1706 CPC1020N
Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.

IXEP1400

Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.

IXYS CORPORATION

Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
Contextual Info: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS

A NEW GENERATION OF HIGH PERFORMANCE MOSFET DRIVERS FEATURES HIGH CURRENT, HIGH SPEED OUTPUTS

Abstract: CPC1225N
Contextual Info: 9  # #0 Clare 2009/2010 Product Catalog Semiconductor Products Complete data sheets are available for downloading at Clare’s website: http://www.clare.com Clare, a wholly owned subsidiary of IXYS Corporation, located 20 miles north of Boston, Massachusetts, USA, designs,

LCA717

Abstract: 0-10v to 4-20ma cpc9909 IX2127 PM1206 en50130-4 CPC1020 CPC1002N deutsch relays inc 35v, 1amp smps circuits
Contextual Info: Clare, a wholly owned subsidiary of IXYS Corporation, located 20 miles north of Boston, Massachusetts, USA, designs, manufactures, and markets a wide variety of semiconductor devices. Clare’s wafer fabrication facility features a 600V BCDMOS process on a bonded-wafer, silicon-on-insulator, trench-isolated

cpc9909

Abstract: 6-pin smps power control ic cpc1943 MXHV9910 0-10v to 4-20ma Line Driver SHDSL IX2127 CPC1230 opamps catalog deutsch relays inc
Contextual Info: Clare, a wholly owned subsidiary of IXYS Corporation, located 20 miles north of Boston, Massachusetts, USA, designs, manufactures, and markets a wide variety of semiconductor devices. Clare’s wafer fabrication facility features a 600V BCDMOS process on a bonded-wafer, silicon-on-insulator, trench-isolated

nu-horizons

Contextual Info: □ IXYS North and South American Distributors Distribution Catalog Sales: Digi-key 800-344-4539 D igi-Key T h ie f R iv e r F alls, M N 8 0 0-344-4539 + 2 1 8-681-6674 Future Electronics Illin o is M isso u ri S a n D ie g o , C A 619-625-2800 AIIAmerican

ixys free catalog

Contextual Info: □ IXYS D S E C 16-12A JL JL. Jl. -JL. HiPerFRED Epitaxial Diode IFAV = 2x 10 A VRRM = 1200 V trr = 40 ns with common cathode and soft recovery V RSM 1200 V RRM TvDe ïr' 1200 DSEC 16-12A TO-220 AB A = Anode, C = Cathode, TA B = Cathode Symbol U rms U

diode b3

Abstract: MII 75-12 A3 resistor catalog 30-12A6 grease diode 12A3 B3-12 75-12A3 200-12A4 10-06A6
Contextual Info: IGBT Modules B3 1999 IXYS All rights reserved B3 - 1 IGBT Modules Contents Package style VCES IC VCE sat Type Page TC = 25° C TC = 25° C max. V A V 1200 35 3.0 MWI 35-12A5 B3- 4 50 3.0 MWI 50-12A5 B3- 8 75 3.0 MWI 75-12A5 B3-12 75 3.0 MII 75-12A3 MID 75-12A3

Contextual Info: □ IXYS DSS 2x81-0035/45B Power Schottky Rectifier •f a v V rrm vP 2x80 A 35-45 V 0.64 V P r e lim in a r y D a ta V RRM V 35 45 35 45 RSM Symbol Type b I_ -H - -t-o -W - DSS 2X81-0035B DSS 2X81-0045B Test Conditions Maximum Ratings ^FA V M Tc = 75°C; rectangular, d = 0.5

mw 137 600g

Abstract: transistor 5cw 069UR1S0250B bs88-4 070US3U1400B 110UR2S0800B transistor 6cw 069UR1S0350B transistor 5cw 61 IXYS CATALOGUE
Contextual Info: ULTRA RAPID SEMICONDUCTOR PROTECTION FUSES ULTRA RAPID SEMICONDUCTOR PROTECTION FUSES WESTCODE CATALOGUE Westcode Semiconductors Ltd Issue 6 – March 2005 ULTRA RAPID SEMICONDUCTOR PROTECTION FUSES Contents 1. Introduction 2 2. Applications & Definitions

sj 8207

Abstract: pu 516 abb 8522-389 rectificadores Phoenix Contact 29 61 202 WiNEDGE ST 12107 New Age Electronics Aki Electronic
Contextual Info: North and South American Distributors Distribution Catalog Sales: Digi-key Corporation 800-344-4539 218-681-6674 Alabama All American Huntsville, AL 205-837-1555 Future Electronics Huntsville, AL 205-971-2010 Nu Horizons Huntsville, AL 205-722-9330 Nu Horizons

Contextual Info: □IXYS MUBW 20-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data Ì VCES = 600 V 'C25 = 23 A Vnc, H= 2.1 V CE(sat) > VCES = 600 V 'C25 = 1 1 A II VRRM = 1200V L.,. = 11 A FAVM lC Q M = 250 A FSM u t(s a t)

Contextual Info: □IXYS MUBW 15-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data VCES = 600 V Ì 'C25 = 18 A Vnc, H= 2.1 V CE(sat) > VCES = 600 V 'C25 = 1 1 A II VRRM = 1200V L.,. = 11 A FAVM lC Q M = 250 A FSM u t(s a t)

Contextual Info: □IXYS MUBW 10-12A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data Rectifier Brake Inverter V RRM = 1600V L.,. FAVM = 11 A U = 250 A VCES = 1200 V V CES = 1200 V 'C25 =3-6 A VCE(Sat,= 2 - 8 V 'C25 = 13 A

Contextual Info: □IXYS MUBW 6-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data Rectifier Brake Inverter V RRM = 1200V L.,. = 11 A FAVM U = 250 A VCES = 600 V VCES = 600 V 'C25 =7A VCE(Sat,= 2.0 V 'C25 =7A VCE,Sat,= 2.0 V

Contextual Info: □IXYS MUBW 35-06 A6 Converter - Brake - Inverter Module CBI1 Rectifier Brake Inverter VRRM = 1200V *FAVM - 25 A lC QM = 370 A FSM VCES = 600 V 'C25 = 23 A Vnc, H= 2.1 V CE(sat) VCES = 600 V 'C25 = 38 A Vnc, H= 2.1 V CE(sat) Features Input Rectifier Bridge D8 - D13

Contextual Info: □IXYS MUBW 25-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 0 D 23 8 25 24 D 2Ï Preliminary data Rectifier Brake Inverter VRRM = 1200V L.,. = 11 A FAVM lC Q M = 250 A FSM VCES = 600 V 'C25 = 1 8 A Vnc, H= 2.1 V C E (sat) VCES = 600 V

Contextual Info: □IXYS MUBW 4-12 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 25 24 D 2Ï Preliminary data Rectifier Brake VRRM = 1600V L.,. = 11 A FAVM U = 250 A VCES Inverter = 1200 V ^C25 = 3.6 A VC E (sat) = 2.8 V VCES = 1200 V 'C25 = 3 - 6 A

ixys free catalog

Abstract: IXYS catalog IXYS IGBT MUBW NTC thermistor 680 ohm A2S250 inverter "SM 1600" output 48 V
Contextual Info: MUBW 15-12 A6 Converter - Brake - Inverter Module CBI1 Brake VRRM = 1600V IFAVM = 25 A IFSM = 370 A VCES = 1200 V IC25 = 13 A VCE(sat) = 2.8 V Inverter VCES = 1200 V IC25 = 18 A VCE(sat) = 2.8 V Features Input Rectifier Bridge D8 - D13 Symbol Conditions

Contextual Info: □IXYS Advanced Technical Data DSSK 40-006B Power Schottky Rectifier Ifav with common cathode V rrm Vp v RSM ^ rrm V V 60 60 2x20 A = 60 V = 0.66 V = TO-247 AD Type L r*T ~ A DSSK 40-006B C A C TAB Symbol Test Conditions Maximum Ratings 70 20 70 A A A 350

IXTD08N100P-1A

Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types

Contextual Info: □IXYS DSEC 60-04; HiPerFRED Epitaxial Diode with soft recovery v RSM Type V VRHM V 400 400 DSEC 60-04A I fav VRRM t,rr 30 A 400 V 30 ns TO-247 AD V C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions Maximum Ratings 70 30 tbd A A A I fsm