IXGP70N33
Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim
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D-68623
IXBOD1-08
IXBOD1-09
IXBOD1-10
DSEP30-06BR
DSEP30-12CR
IXGP70N33
IXGQ90N33
SK0604
IXTP76N075
IXER35N120D1
IXGP70N33TBM-A
DH60-18A
VBO19
SK0712
IXTH1N250
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calculation of IGBT snubber
Abstract: DSEP ISOPLUS247 dt300
Text: Fast, faster, fastest! Optimized diodes for switching applications by Udo Steinebrunner, IXYS Semiconductor GmbH, Lampertheim Abstract Great efforts have been made to improve power switches – MOSFETs and IGBTs – to decrease forward voltage drop and as
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IXAN0060
Abstract: series connection of mosfet ISOPLUS247 calculation of IGBT snubber dt300
Text: Fast, faster, fastest! Optimized diodes for switching applications by Udo Steinebrunner, IXYS Semiconductor GmbH, Lampertheim IXAN0060 Abstract Great efforts have been made to improve power switches – MOSFETs and IGBTs – to decrease forward voltage drop and as
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IXAN0060
IXAN0060
series connection of mosfet
ISOPLUS247
calculation of IGBT snubber
dt300
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Dsei 2x101-12A
Abstract: ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b
Text: FRED Contents Package style/Bauform 1b TO-252 AA 1b 1 1a 1 TO-220 AC 1 1a TO-263 AA 1a 2 TO-247 AD 2 2a TO-247 AD 2b ISOPLUS 247 TM 2a/b 2a 2a 3 SOT-227 B, miniBLOC 3 1999 IXYS All rights reserved VRRM IFAV trr V A ns 600 600 600 6 8 8 35 35 35 600 1000
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O-252
0-06A
0-10A
0-12A
D1-16
D1-18
D1-20
0-02A
Dsei 2x101-12A
ixys dsei 1x31-06c
ixys dsei 2x31-06c
IXYS DSEI 2X121-02a
ixys dsei 2x30-06c
DSEI IXYS 2x31-12B
2x61-06c
2x121-02a
2x31-12B
2x31-10b
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D-68623
Abstract: No abstract text available
Text: Advanced Technical Data Fast Recovery Epitaxial Diode FRED VRSM V VRRM V Type 640 600 DSEI 6-06AS DSEI 6 IFAVM = 6 A VRRM = 600 V trr = 35 ns marking on product C A TO-252AA 6I060AS Cathode (Flange) Anode Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM
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6-06AS
O-252AA
6I060AS
packag503-0,
D-68623
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Untitled
Abstract: No abstract text available
Text: DSEI2x101-12A FRED VRRM = 1200 V I FAV = 2x 91 A t rr = 40 ns Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs Part number DSEI2x101-12A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips
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DSEI2x101-12A
OT-227B
60747and
20130703a
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Untitled
Abstract: No abstract text available
Text: DSEI2x101-06A FRED VRRM = 600 V I FAV = 2x 96 A t rr = 35 ns Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs Part number DSEI2x101-06A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc ● Planar passivated chips
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DSEI2x101-06A
OT-227B
60747and
20130703b
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din 7985 B
Abstract: SCREW din 7985 din 7985
Text: DSEI 2x 60-04C Fast Recovery Epitaxial Diode FRED IFAVM = 2x 60 A VRRM = 400 V trr = 35 ns 2 VRSM VRRM V V 440 400 1 miniBLOC, SOT-227 B Type DSEI2x60-04C 3 4 E72873 Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM
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60-04C
DSEI2x60-04C
OT-227
E72873
O-247
20121212a
din 7985 B
SCREW din 7985
din 7985
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DSEI2X101-06A
Abstract: DSEI2*101-06A 06a marking
Text: DSEI2x101-06A V RRM = 600 V I FAV = 2x 96 A t rr = 35 ns FRED Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs Part number DSEI2x101-06A Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips ● Low leakage current
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DSEI2x101-06A
2x101-06
60747and
20110519a
DSEI2X101-06A
DSEI2*101-06A
06a marking
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Untitled
Abstract: No abstract text available
Text: DSEI2x101-06A V RRM = 600 V I FAV = 2x 96 A t rr = 35 ns FRED Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs Part number Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips Low leakage current Short recovery time
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DSEI2x101-06A
pow200
2x101-06
60747and
20110519a
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D-68623
Abstract: 1200v diode d686
Text: DSEI 20-12A IFAVM = Fast Recovery Epitaxial Diode FRED VRSM VRRM Type 1200V 1200V DSEI 20-12A VRRM = 1200 V trr = 40 ns C A TO-220 AC Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM
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0-12A
O-220
D-68623
1200v diode
d686
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IXYS DSEI 2
Abstract: 6006A 60-06A
Text: DSEI 60-06A DSEI 60-06AT VRRM = 600 V IFAVM = 60 A trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 A Type C TO-247 AD C DSEI 60-06A DSEI 60-06AT C A TO-268 AA (AT Type) A A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM ①
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0-06A
60-06AT
O-247
O-268
IXYS DSEI 2
6006A
60-06A
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dse*60-06A
Abstract: 60-06A DSEI60-06A DSEI60-06AT
Text: DSEI60-06A DSEI60-06AT Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 IFAV = 60 A VRRM = 600 V trr = 35 ms Type A C TO-247 AD C DSEI 60-06A DSEI 60-06AT A C TO-268 AA (AT Type) A A C A = Anode, C = Cathode IFRMS IFAVM IFRM IFSM I2t
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DSEI60-06A
DSEI60-06AT
O-247
0-06A
60-06AT
O-268
dse*60-06A
60-06A
DSEI60-06A
DSEI60-06AT
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SOT227B
Abstract: DSEI2X121-02A DSEI12-06A DSEI2X61-12b DSEI2*61-12 DSEI2X31-12B DSEI2*61 ixys dsei2x31-06c DSEP2X61-12A DSEP12-12A
Text: klH TEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten\ 495 739-09-95, 644-41-29 electronics flMOAbi FRED (Fast Recovery Epitaxial Diodes) $upMbi IXYS np0M3B0flMTenb f lM a n a 3 0 H p a ö o H M X T e M n e p a T y p Kofl: : IXYS : o t - 40oC f l o + 150oC V f npw [B]
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flnana30H
ot-40Â
DSEI12-06A
T0220AC
DSEP12-12A
DSEP30-03A
T0247AD
DSEI60-06A
SOT227B
DSEI2X121-02A
DSEI2X61-12b
DSEI2*61-12
DSEI2X31-12B
DSEI2*61
ixys dsei2x31-06c
DSEP2X61-12A
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DSEI35-06AS
Abstract: No abstract text available
Text: IXYS Fast Recovery Epitaxial Diode FRED DSEI 35 VRRM = 600 V ^FAVM trr 35 A = 35 ns = Advanced data v v 600 600 DSEI 35-06AS A = Anode, C = Cathode, NC = No connection TAB = Cathode Symbol Test Conditions Maximum Ratings ^FRMS W m ^FRM TVJ - "^"vjm Tc = 65°C; rectangular, d = 0.5
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DSEI35
DSEI35-06AS
O-263
DSEI35-06AS
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Untitled
Abstract: No abstract text available
Text: Id IXYS • Fast Recovery Epitaxial Diode FRED DSEI60 lFAVM = 69 A VRRM = 200 V trr = 35 ns TO-247 AD c A Sym bol T e st C o n d itio n s ^FRMS "*vj = "*"vjM T c = 85°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by T VJM 98 69 800
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DSEI60
O-247
4bflb22b
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Untitled
Abstract: No abstract text available
Text: IXYS Fast Recovery Epitaxial Diode FRED DSEI 2x161 lFAVM = 2x158 A = 35 ns 1 K2 vRSM VRRM V VRRM = 200 v Type f- 0 I •+-0 V miniBLOC, SOT-227 B K2 K1 200 DSEI 2x161-02A 200 Symbol Test Conditions Maximum Ratings (per diode) 100 158 600 A A A t = 10 ms (50 Hz), sine
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2x161
2x158
OT-227
2x161-02A
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IXYS DSEI 2X121-02a
Abstract: ixys dsei 2x30-12b DSEI IXYS 2x31-12B ixys dsei 1x31-06c IXYS DSEI 2 DSEI 120-06A 1x31-06c dsei 2x60 IXYS DSEI 2X61-12B DSEI IXYS 2x31
Text: IXYS _ FRED Contents K Package style/Bauform Type Page ns 1b TO-252AA 1 TO-220 AC 1a TO-263AA 35 35 35 k \ 1a 2 TO-247 AD 2a TO-247 AD 2b ISOPLUS 247 3 SOT-227 B, miniBLOC new DSEI6-06AS DSEI 8-06A DSEI 8-06AS D1-2 D1-4 D1-4 35 50 50 40
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O-252AA
DSEI6-06AS
8-06AS
2-06A
2-10A
2-12A
0-12A
19-06AS
36-06AS
0-06A
IXYS DSEI 2X121-02a
ixys dsei 2x30-12b
DSEI IXYS 2x31-12B
ixys dsei 1x31-06c
IXYS DSEI 2
DSEI 120-06A
1x31-06c
dsei 2x60
IXYS DSEI 2X61-12B
DSEI IXYS 2x31
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Untitled
Abstract: No abstract text available
Text: □ IXYS Fast Recovery Epitaxial Diode FRED V RSM V V RRM DSEI30 IFAVM V , 37 A 600 V t 35 ns RRM f ^ A A Type c TO-247 AD V 640 600 DSEI 30-06A Symbol Test Conditions ^FRMS ^FAVM * ^FRM TVJ ~ T vjm T0 = 85°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by TVJM
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DSEI30
O-247
0-06A
4bflb22b
0003fl7b
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LT 0216 diode
Abstract: No abstract text available
Text: IXYS Fast Recovery Epitaxial Diode FRED DSEl 30 lFAVM = 26 A VRRM = 1200 V trr = 40 ns TO-247 A = Anode, C = Cathode Maximum Ratings Symbol Test Conditions Urhs W » TVj = T"vjM Tc = 85°C; rectangular, d = 0.5 t, < 10 us; rep. rating, pulse width limited by TVJM
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O-247
O-247
LT 0216 diode
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ixys dsei
Abstract: IXYS DSEI 2X
Text: □IX Y S DSEI 2x101-02A Preliminary Data v RRM Fast Recovery Epitaxial Diode FRED v RSM v Type 200 V 200 V DSEI 2x101-02A Symbol Test Conditions ^FRMS Tyj = T vjm A ^FAVM ^FRM TVJ = 125°C;Tc = 97°C; rectangular,§ = 0.5 (Note 1) 28 tp < 10jas; rep. rating, pulse width limited by TVJM400
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2x101-02A
OT-227
10jas;
D-68623
00D3M43
ixys dsei
IXYS DSEI 2X
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dsei2x101-02a
Abstract: ixys dsei 1800 IXYS 25C8 0504N
Text: DSEI2x101-02A QIXYS Preliminary Data v RRM Fast Recovery Epitaxial Diode FRED v RSM ^RBM Type 200 V 200 V DSEI 2x101-02A Symbol Test Conditions ^FRM ^FSM TVJ =45°C ; t = 1 0 m s (50 Hz), sine t = 8 .3 m s (60 Hz), sine 600 660 A A T w = 150°C; t = 1 0 m s (50 Hz), sine
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DSEI2X101-02A
2x100
2x101-02A
byTVJM400
OT-227
00D3443
D-68623
ixys dsei
1800 IXYS
25C8
0504N
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Untitled
Abstract: No abstract text available
Text: □IXYS DSEI 20-12A Fast Recovery Epitaxial Diode FRED ^R S M 1200V v rrM TyPe 1200V DSEI 20-12A Symbol Test Conditions ^F R M S T"vj ^FAVM ^FRM ^FSM TVJ = A TVJ = 1 50°C TVJ = f , \ 70 17 A 220 A A 130 140 A A t = 10 ms (50 Hz), sine 110 A t = 8.3 ms (60 Hz), sine
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0-12A
O-220
00Q34S4
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Untitled
Abstract: No abstract text available
Text: □ IX Y S Advanced Technical Data Fast Recovery Epitaxial Diode FRED V RSM V TyPe V rrm V 640 600 DSEI 6-06AS DSEI6 m arking on product f A C I \ IFAVM 6A vrRRM 600 V t 35 ns TO-252AA 6I060AS Cathode (Flange) Sym bol Test Conditions ^FRMS "^"vj = "^"vjM
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6-06AS
O-252AA
6I060AS
D-68623
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