IXYS DSEI 2
Abstract: E72873 dsei 31-06c ixys dsei
Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 440 640 400 600 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C DSEI 2x 30 DSEI 2x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ¬
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OT-227
E72873
30-04C
31-04C
30-06C
31-06C
IXYS DSEI 2
E72873
dsei 31-06c
ixys dsei
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Untitled
Abstract: No abstract text available
Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 440 640 400 600 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C DSEI 2x 30 DSEI 2x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ①
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OT-227
E72873
30-04C
31-04C
30-06C
31-06C
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dsei 31-06c
Abstract: ixys dsei IXYS DSEI 2X E72873 3104c IXYS DSEI 2 3188 diode
Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 440 640 400 600 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C DSEI 2x 30 DSEI 2x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ①
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OT-227
E72873
30-04C
31-04C
30-06C
31-06C
dsei 31-06c
ixys dsei
IXYS DSEI 2X
E72873
3104c
IXYS DSEI 2
3188 diode
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E72873
Abstract: 30-10B
Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 1000 1000 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-10B DSEI 2x 31-10B DSEI 2x30 DSEI 2x31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5
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OT-227
E72873
30-10B
31-10B
E72873
30-10B
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Untitled
Abstract: No abstract text available
Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 1000 1000 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-10B DSEI 2x 31-10B DSEI 2x30 DSEI 2x31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5
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OT-227
E72873
30-10B
31-10B
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E72873
Abstract: ixys dsei 61-12b
Text: DSEI 2x 61 Fast Recovery Epitaxial Diode FRED VRRM V V 200 200 miniBLOC, SOT-227 B E72873 Type DSEI 2x 61-02A Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM
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OT-227
E72873
1-02A
E72873
ixys dsei 61-12b
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IXYS DSEI 2X
Abstract: DSEI 2X101-06 dsei 101-12a 101-06A E72873 AS1000
Text: DSEI 2x 101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 VRRM = 600 V IFAVM = 2x 96 A = 35 ns trr miniBLOC, SOT-227 B E72873 Type DSEI 2x 101-06A Symbol Test Conditions Maximum Ratings (per diode) IF(RMS) IF(AV)M ¬ IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5
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OT-227
E72873
01-06A
2x101-12
IXYS DSEI 2X
DSEI 2X101-06
dsei 101-12a
101-06A
E72873
AS1000
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IXYS DSEI 2
Abstract: ixys dsei 2x30
Text: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 IFAVM = 2x30 A VRRM = 600 V trr = 35 ns Type DSEI 2x 30-06P DSEI 2x 31-06P 2x 30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular; d = 0.5
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30-06P
31-06P
IXYS DSEI 2
ixys dsei 2x30
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ixys dsei 2x30
Abstract: DSEI IXYS 2x31 IXYS DSEI 2 DSEI 20-01 A
Text: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 1000 1000 IFAVM = 2x30 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 30-10P DSEI 2x 31-10P 2x30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM
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30-10P
31-10P
ixys dsei 2x30
DSEI IXYS 2x31
IXYS DSEI 2
DSEI 20-01 A
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Untitled
Abstract: No abstract text available
Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 1200 1200 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-12B DSEI 2x 31-12B DSEI 2x 30 DSEI 2x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5
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OT-227
E72873
30-12B
31-12B
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ixys dsei 2x31-06c
Abstract: 2x31-06c ixys dsei ixys dsei 2x30 06c ultrasonic distance circuit design IXYS DSEI 2
Text: DSEI 2x30-06P IFAVM = 2x30 A VRRM = 600 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 Type DSEI 2x 30-06P Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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2x30-06P
30-06P
20070731a
ixys dsei 2x31-06c
2x31-06c
ixys dsei
ixys dsei 2x30 06c
ultrasonic distance circuit design
IXYS DSEI 2
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Dsei 2x101-12A
Abstract: ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b
Text: FRED Contents Package style/Bauform 1b TO-252 AA 1b 1 1a 1 TO-220 AC 1 1a TO-263 AA 1a 2 TO-247 AD 2 2a TO-247 AD 2b ISOPLUS 247 TM 2a/b 2a 2a 3 SOT-227 B, miniBLOC 3 1999 IXYS All rights reserved VRRM IFAV trr V A ns 600 600 600 6 8 8 35 35 35 600 1000
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O-252
0-06A
0-10A
0-12A
D1-16
D1-18
D1-20
0-02A
Dsei 2x101-12A
ixys dsei 1x31-06c
ixys dsei 2x31-06c
IXYS DSEI 2X121-02a
ixys dsei 2x30-06c
DSEI IXYS 2x31-12B
2x61-06c
2x121-02a
2x31-12B
2x31-10b
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ixys dsei 2x101
Abstract: No abstract text available
Text: IXYS _ DSEI 2x101 Fast Recovery Epitaxial Diode FRED VR3M V„RM V V 1200 1200 PI ° DSEI 2x 101-12A Test Conditions If(RMS) Ifbm Tyj —T vjm T c = 50°C; rectangular, d = 0.5 tp < 10 |xs; rep. rating, pulse width limited by T vjm Ifsm Tvj = 45°C;
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2x101
E72873
ixys dsei 2x101
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Untitled
Abstract: No abstract text available
Text: IXYS Fast Recovery Epitaxial Diode FRED DSEI 2x161 lFAVM = 2x158 A = 35 ns 1 K2 vRSM VRRM V VRRM = 200 v Type f- 0 I •+-0 V miniBLOC, SOT-227 B K2 K1 200 DSEI 2x161-02A 200 Symbol Test Conditions Maximum Ratings (per diode) 100 158 600 A A A t = 10 ms (50 Hz), sine
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2x161
2x158
OT-227
2x161-02A
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ixys dsei 2x30-06c
Abstract: ixys dsei 2x30-05c
Text: 4bflb52b O O O i a n 2TÌ • IXY □IXYS DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diodes I FAV V t RRM rr = 2x30 A = 400-600 V < 35 ns miniBLOC, SOT-227 B v RSIf v Type Type DSEI 2X30-04C DSEI 2X30-05C DSEI 2X30-06C DSEI 2x31 -04C DSEI 2x31-050 DSEI 2x31-060
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4bflb52b
OT-227
2X30-04C
2X30-05C
2X30-06C
2x31-050
2x31-060
D-68619
ixys dsei 2x30-06c
ixys dsei 2x30-05c
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ixys dsei 2x30-04c
Abstract: No abstract text available
Text: DSEI 2X30-04C/06C DSEI 2X31-04C/06C DIXYS Diode 2X30-04C/06C 2X31-04C/06C FRED V RSM V rrm 440V 640V 400V 600V Symbol Type DSEI 2x 30/31 -04C DSEI 2x 30/31 -06C o -l- I f DSEI2x30 Test Conditions T VJ I "^"v j M A A TVJ = 150°C t = 10 mS (50 Hz), sine t = 8.3 ms (60 Hz), sine
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2X30-04C/06C
2X31-04C/06C
DSEI2x30
00D343R
D-68623
ixys dsei 2x30-04c
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ixys dsei 2x30-05c
Abstract: ixys dsei 2x30-04c ixys dsei
Text: 4bflb22b O G O ia n D Y I X E H B IIX Y S DSEI 2x30 IFAV DSEI 2x31 VRRM Fast Recovery Epitaxial Diodes 2x30 A 400-600 V < 35 ns miniBLOC, SOT-227 B v RSM V T yp e Typ e V V 440 540 640 400 500 600 Symbol Test Conditions •cavi . TVJ = Tvjm Tc = 85°CT rectangular, 6= 0.5
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4bflb22b
OT-227
2X30-04C
2x31-040
2x30-05C
2x31-050
2x30-060
2x31-060
D-68619
ixys dsei 2x30-05c
ixys dsei 2x30-04c
ixys dsei
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ixys dsei 2x31-10b
Abstract: No abstract text available
Text: QIXYS 4bflfc>22b 0 0 0 1 0 2 1 TM7 « I X Y Fast Recovery Epitaxial Diodes DSEI 2x30 DSEI 2x31 ^FAV V RRM t_ = 2x30 A = 600-1000 V < 50 ns miniBLOC, SOT-227 B v RSU v rrm V T yp e Type DSEI 2x30-06B DSEI 2x30-08B DSEI 2x30-10B DSEI 2x31-06B DSEI 2x31-08B DSEI 2x31-10B
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OT-227
2x30-06B
2x30-08B
2x30-10B
2x31-06B
2x31-08B
2x31-10B
D-68619
ixys dsei 2x31-10b
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2x30-10B
Abstract: 2x31-10b ixys dsei 2x31-10b ixys dsei 2x30-10b
Text: MbflL.22b 0001021 T47 « I X Y □IXY S Fast Recovery Epitaxial Diodes DSEI 2x30 DSEI 2x31 ^FAV V RRM t. = 2x30 A = 600-1000 V < 50 ns miniBLOC, SOT-227 B v RSM V 640 800 1000 v rrm T y p e T y p e V 600 800 1000 DSEI 2x30-06B DSEI 2x30-08B DSEI 2x30-10B DSEI 2x31-06B
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OT-227
2x30-06B
2x31-06B
2x30-08B
2x31-08B
2x30-10B
2x31-10B
D-68619
2x31-10b
ixys dsei 2x31-10b
ixys dsei 2x30-10b
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DSEI IXYS 2x31
Abstract: IXYS DSEI 2X IXYS fast recovery rectifiers
Text: Fast Recovery Epitaxial Diode FRED DSEI 2x 30 DSEI 2x31 I 1 VRRM V Type V 1000 1000 4 I p : DSEI 2x 30-1 OB DSEI 2x 31 -1 OB - I r 1 k -. — ÎI- 1 DSEI 2x30 Symbol ^FRMS U « U rm ^FSM l2t Test Conditions DSEI 2x31 Maximum Ratings (per diode) Tyj I v jw
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OT-227
E72873
DSEI IXYS 2x31
IXYS DSEI 2X
IXYS fast recovery rectifiers
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dsei 31-06c
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED Type 440 640 400 600 Symbol LT— I <H-H- 1-0 DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C Test Conditions DSEI 2x 30 DSEI 2x 31 Maximum Ratings (per diode) ^FRM TVJ T\um Tc = 85°C; rectangular, d = 0.5
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30-04C
31-04C
30-06C
31-06C
OT-227
E72873
dsei 31-06c
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Untitled
Abstract: No abstract text available
Text: •_4bßb22b 0 0 0 1 Ö2 S 5^2 M I X Y □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 lFAV = 2x60 A V rrm trr = 600-1000 V < 50 ns miniBLOC, SOT-227 B V v*» V 640 800 1000 600 800 1000 Type p ° ! 3 •- — Symbol Test Conditions 'frms *FAV* 1 Ifmi
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OT-227
2x61-06B
2x61-08B
2x61-10B
D-68619
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ixys dsei 2x61-06C
Abstract: No abstract text available
Text: Mt a b PZ b D D G i a S 3 7 1 T • I X Y D I X Y S DSEI 2x61 Fast Recovery Epitaxial Diodes lFAV = 2x60 A VRRM = 400-600 V tn < 35 ns miniBLOC, SOT-227 B V V 440 540 640 400 500 600 2 • DSEI 2x61-04C DSEI 2x61-05C DSEI 2x61-06C 1 1 o-J H Ho 3 -« 4
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OT-227
2x61-04C
2x61-05C
2x61-06C
D-68619
ixys dsei 2x61-06C
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ixys dsei
Abstract: IXYS DSEI 2X
Text: □IX Y S DSEI 2x101-02A Preliminary Data v RRM Fast Recovery Epitaxial Diode FRED v RSM v Type 200 V 200 V DSEI 2x101-02A Symbol Test Conditions ^FRMS Tyj = T vjm A ^FAVM ^FRM TVJ = 125°C;Tc = 97°C; rectangular,§ = 0.5 (Note 1) 28 tp < 10jas; rep. rating, pulse width limited by TVJM400
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2x101-02A
OT-227
10jas;
D-68623
00D3M43
ixys dsei
IXYS DSEI 2X
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