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    Dsei 2x101-12A

    Abstract: ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b
    Text: FRED Contents Package style/Bauform 1b TO-252 AA 1b 1 1a 1 TO-220 AC 1 1a TO-263 AA 1a 2 TO-247 AD 2 2a TO-247 AD 2b ISOPLUS 247 TM 2a/b 2a 2a 3 SOT-227 B, miniBLOC 3 1999 IXYS All rights reserved VRRM IFAV trr V A ns 600 600 600 6 8 8 35 35 35 600 1000


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    PDF O-252 0-06A 0-10A 0-12A D1-16 D1-18 D1-20 0-02A Dsei 2x101-12A ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b

    ixys dsei 2x101

    Abstract: IXYS DSEI 2 2x91A ixys dsei 2x91
    Text: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x91 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 101-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5


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    PDF 2x101 VX-18 IK-10 101-12P 2x101-12 ixys dsei 2x101 IXYS DSEI 2 2x91A ixys dsei 2x91

    2x101-06 200A

    Abstract: 2x101-06 DSEI 2X101-06 ixys dsei 2x101
    Text: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x96 A VRRM = 600 V trr = 35 ns Type DSEI 2x 101-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5


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    PDF 2x101 VX-18 IK-10 101-06P Con1000 2x101-06 2x101-06 200A 2x101-06 DSEI 2X101-06 ixys dsei 2x101

    Untitled

    Abstract: No abstract text available
    Text: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x91 A VRRM = 1200 V = 40 ns trr Type DSEI 2x 101-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5


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    PDF 2x101 VX-18 IK-10 101-12P 2x101-12

    QR200

    Abstract: No abstract text available
    Text: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x96 A VRRM = 600 V = 35 ns trr Type DSEI 2x 101-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5


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    PDF 2x101 VX-18 IK-10 101-06P 2x101-06 QR200

    IXYS DSEI 2X

    Abstract: DSEI 2X101-06 dsei 101-12a 101-06A E72873 AS1000
    Text: DSEI 2x 101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 VRRM = 600 V IFAVM = 2x 96 A = 35 ns trr miniBLOC, SOT-227 B E72873 Type DSEI 2x 101-06A Symbol Test Conditions Maximum Ratings (per diode) IF(RMS) IF(AV)M ¬ IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5


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    PDF OT-227 E72873 01-06A 2x101-12 IXYS DSEI 2X DSEI 2X101-06 dsei 101-12a 101-06A E72873 AS1000

    Untitled

    Abstract: No abstract text available
    Text: DSEI 2x 101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 VRRM = 1200 V IFAVM = 2x 91 A = 40 ns trr miniBLOC, SOT-227 B E72873 Type DSEI 2x 101-12A Symbol Test Conditions Maximum Ratings (per diode) IF(RMS) IF(AV)M ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5


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    PDF OT-227 E72873 01-12A 2x101-12

    DSEI 2X101-06

    Abstract: 2x101 2x101-06 "SOT-227 B" dimensions 101-06A E72873 2x101-06 200A
    Text: DSEI 2x 101 Fast Recovery Epitaxial Diode FRED VRRM = 600 V IFAVM = 2x 96 A trr = 35 ns Preliminary data VRSM VRRM V V 600 600 miniBLOC, SOT-227 B E72873 Type DSEI 2x 101-06A Symbol Test Conditions Maximum Ratings (per diode) IF(RMS) IF(AV)M ① IFRM TVJ = TVJM


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    PDF OT-227 E72873 01-06A 2x101-06 DSEI 2X101-06 2x101 2x101-06 "SOT-227 B" dimensions 101-06A E72873 2x101-06 200A

    dsei 101-12a

    Abstract: E72873
    Text: DSEI 2x 101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 VRRM = 1200 V IFAVM = 2x 91 A trr = 40 ns miniBLOC, SOT-227 B E72873 Type DSEI 2x 101-12A Symbol Test Conditions Maximum Ratings (per diode) IF(RMS) IF(AV)M ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5


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    PDF OT-227 E72873 01-12A 2x101-12 dsei 101-12a E72873

    DSEI 2X101-06

    Abstract: ixys dsei 101-06A E72873 IXYS DSEI 2
    Text: DSEI 2x 101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 VRRM = 600 V IFAVM = 2x 96 A trr = 35 ns miniBLOC, SOT-227 B E72873 Type DSEI 2x 101-06A Symbol Test Conditions Maximum Ratings (per diode) IF(RMS) IF(AV)M ① IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5


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    PDF OT-227 E72873 01-06A 2x101-06 DSEI 2X101-06 ixys dsei 101-06A E72873 IXYS DSEI 2

    Untitled

    Abstract: No abstract text available
    Text: DSEI2x101-06A V RRM = 600 V I FAV = 2x 96 A t rr = 35 ns FRED Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs Part number Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips Low leakage current Short recovery time


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    PDF DSEI2x101-06A pow200 2x101-06 60747and 20110519a

    DSEI2X101-06A

    Abstract: DSEI2*101-06A 06a marking
    Text: DSEI2x101-06A V RRM = 600 V I FAV = 2x 96 A t rr = 35 ns FRED Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs Part number DSEI2x101-06A Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips ● Low leakage current


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    PDF DSEI2x101-06A 2x101-06 60747and 20110519a DSEI2X101-06A DSEI2*101-06A 06a marking

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    ixys dsei 2x101

    Abstract: No abstract text available
    Text: IXYS _ DSEI 2x101 Fast Recovery Epitaxial Diode FRED VR3M V„RM V V 1200 1200 PI ° DSEI 2x 101-12A Test Conditions If(RMS) Ifbm Tyj —T vjm T c = 50°C; rectangular, d = 0.5 tp < 10 |xs; rep. rating, pulse width limited by T vjm Ifsm Tvj = 45°C;


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    PDF 2x101 E72873 ixys dsei 2x101

    ixys dsei

    Abstract: IXYS DSEI 2X
    Text: □IX Y S DSEI 2x101-02A Preliminary Data v RRM Fast Recovery Epitaxial Diode FRED v RSM v Type 200 V 200 V DSEI 2x101-02A Symbol Test Conditions ^FRMS Tyj = T vjm A ^FAVM ^FRM TVJ = 125°C;Tc = 97°C; rectangular,§ = 0.5 (Note 1) 28 tp < 10jas; rep. rating, pulse width limited by TVJM400


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    PDF 2x101-02A OT-227 10jas; D-68623 00D3M43 ixys dsei IXYS DSEI 2X

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Fast Recovery Epitaxial Diode FRED DSEI 2x101 1200 V V RRM 2x99 A F(AV)M t Preliminary data 40 ns rr miniBLOC, SOT-227 B V rSM V 1200 Symbol Type V rrm V Test Conditions -N - -Ho Maximum Ratings (per diode) 140 99 TBD A A A t = 10 ms (50 Hz), sine


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    PDF 2x101 OT-227 2x101-12A D-68623

    IXYS DSEI 2X101-12a

    Abstract: ixys dsei 2x101 Dsei 2x101-12A
    Text: Fast Recovery Epitaxial Diode FRED DSEI 2x101 1200 V 2x99 A 40 ns V RRM F(AV)M Preliminary data V rsm V 1200 V rrm Type V 1200 -1 0I t fcl > c.’ .1 ^.1 W1 1 miniBLOC, SOT-227 B ~ 1 1v DSEI 2x101-12A M axim um Rcitings (per diode) Symbol Test C onditions


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    PDF 2x101 OT-227 2x101-12A D-68623 IXYS DSEI 2X101-12a ixys dsei 2x101 Dsei 2x101-12A

    101-06A

    Abstract: No abstract text available
    Text: DIXYS Fast Recovery Epitaxial Diode FRED DSEI 2x101 V RRM — IFAVM - 600 V 2x 96 A 35 ns vr Preliminary data V rsm V rrh V V 600 600 _ w DSEI 2x 101-06A Symbol T est C o nd ition s U(RMS) Tyj — T VJM 1200 1300 A A TVJ = 150°C; t = 10 ms (50 Hz), sine


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    PDF 01-06A 2x101 OT-227 E72873 101-06A

    ixys dsei 2x101

    Abstract: dse12x101-06 DSE12X101 ixys dsei 101-06A DSEI 12 06A 2x101 dse1 IXYS DSEI 2X E72873
    Text: Fast Recovery Epitaxial Diode FRED DSEI2x 101 VRRM = 600 V W = 2x 96 A trr = 35 ns m Preliminary data V rsm V rrm V V 600 1-N - |-o DSEI 2x 101-06A Test Conditions Maxim um Ratings (per diode) Ì Frm "i"vj = "Tvjm T c = 7 0 °C ; rectangular, d = 0.5


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    PDF 2x101 01-06A ixys dsei 2x101 dse12x101-06 DSE12X101 ixys dsei 101-06A DSEI 12 06A dse1 IXYS DSEI 2X E72873

    dsei2x101-02a

    Abstract: ixys dsei 1800 IXYS 25C8 0504N
    Text: DSEI2x101-02A QIXYS Preliminary Data v RRM Fast Recovery Epitaxial Diode FRED v RSM ^RBM Type 200 V 200 V DSEI 2x101-02A Symbol Test Conditions ^FRM ^FSM TVJ =45°C ; t = 1 0 m s (50 Hz), sine t = 8 .3 m s (60 Hz), sine 600 660 A A T w = 150°C; t = 1 0 m s (50 Hz), sine


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    PDF DSEI2X101-02A 2x100 2x101-02A byTVJM400 OT-227 00D3443 D-68623 ixys dsei 1800 IXYS 25C8 0504N