IXYS IXBOD Search Results

IXGP70N33

Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim

IXYS CORPORATION

Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
Contextual Info: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS

bod ixys

Abstract: IXYS IXBOD
Contextual Info: Breakover Diodes Applications ● Transient voltage protection High-voltage switches ● Crowbar ● Lasers ● Pulse generators ● i IH IBO V VH VBO H 1999 IXYS All rights reserved H-1 IXBOD 1 -06.10 Single Breakover Diode VBO Standard V Types VBO = 600-1000V

IXYS IXBOD

Abstract: lt 747 bod ixys
Contextual Info: D IX Y S Breakover Diodes Applications • Transient voltage protection • High-voltage switches • Crowbar • Lasers • Pulse generators o- 1998 IXYS All rights reserved H -1 mmm IXBOD 1 -06.10 1A. X U Single Breakover Diode =600 - 1000V ^AVM ”

IXYS IXBOD

Contextual Info: Schottky Diode 10-95 A V RRM V 1 'f a v @ T1c A V FM @ 1 "FM °C 1 *AR mJ V @ RM rated V RWM mA A T j max. °C Package style Fig. No. Type The developm ent of Schottky diodes chips in the voltage range of V RRM = 35 - 100 V and for Beginning 1997 will be contained these diodes in the IXYS delivery program.

IXBOD1-06

Contextual Info: IXBOD1 Breakover Diode Gen1 BOD1 VBO [V] VBO = 600-1000 V IAVM = 0.9 A Standard Types 600 ±50 IXBOD1-06 700 ±50 IXBOD1-07 800 ±50 IXBOD1-08 900 ±50 IXBOD1-09 1000 ±50 IXBOD1-10 Backside: isolated A K Features / Advantages: Applications: Package: FP-Case

Contextual Info: IXBOD2 Breakover Diode Gen2 BOD2 VBO [V] VBO = 400-1400 V IAVM = 0.9 A Standard Types 400 ±50 IXBOD2-04 500 ±50 IXBOD2-05 600 ±50 IXBOD2-06 700 ±50 IXBOD2-07 800 ±50 IXBOD2-08 900 ±50 IXBOD2-09 1000 ±50 IXBOD2-10 1100 ±50 IXBOD2-11 1200 ±50 IXBOD2-12

diode js

Abstract: DIODE JS.6 IXYS IXBOD
Contextual Info: n i • I i1 YA vJL U IXBOD 1 -06.10 Single Breakover Diode > o ffl ±50 ±50 ±50 ±50 =600 -1000V ^AVM ” A Standard V 600 800 900 1000 VB0 Types IXBOD IXBOD IXBOD IXBOD 1 -06 1 -08 1 -09 1 -10 Symbol Test Conditions Ratings Id T w = 25°C; V = 0,8x V B0

2a103

Contextual Info: Breakover Diodes Applications l Transient voltage protection High-voltage switches l Crowbar l Lasers l Pulse generators l i IH IBO V VH VBO Application Note H - 6 Remark: For special selection of more than 2 pieces IXBOD 1-. for every break down voltage of VBO > 2000 V please contact us.

IXYS IXBOD

Abstract: bod ixys zener 20 15r h8 diode zener c822c kp 100 thyristor
Contextual Info: Breakover Diodes Applications l Transient voltage protection High-voltage switches l Crowbar l Lasers l Pulse generators l i IH IBO V VH VBO Application Note H - 6 Remark: For special selection of more than 2 pieces IXBOD 1-. for every break down voltage of VBO > 2000 V please contact us.

Contextual Info: IXBOD 1 -06.10 Single Breakover Diode VBO Standard V Types VBO = 600-1000V IAVM = 0.9 A A K 600 ±50 700 ±50 800 ±50 900 ±50 1000 ±50 IXBOD 1 -06 IXBOD 1 -07 IXBOD 1 -08 IXBOD 1 -09 IXBOD 1 -10 Symbol Conditions ID TVJ = 125°C; Ratings 20 V = 0,8x VBO

Contextual Info: IXBOD 1 -12R.42R D Breakover Diode Modules Version: RD Version: R VBO Standard BOD - VBO Standard BOD - VBO Standard V Types Elements V Types Elements V Types IXBOD 1 -12R(D) IXBOD 1 -13R(D) IXBOD 1 -14R(D) IXBOD 1 -15R(D) IXBOD 1 -16R(D) IXBOD 1 -17R(D)

mosfet controlled thyristor

Abstract: mcc 55-12 a3 diode smd diode nomenclature ixys mcc 56 smd diode a3 MCC SMD DIODE H- bridge mosfet circuit smd 3 phase rectifier bridge 3 phase rectifier scr controller
Contextual Info: Product Nomenclature Diode Dice C-DWEP 69-12 Sample A3 Packing method C T W Single dice in trays, electrically tested Dice in wafers, unsawed, electrically tested, inked bad die Dice in wafers on foil, sawed, electrically tested, inked bad die Die function

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455