IXYS RECTIFIER Search Results

LDS8710

Abstract: solar converter LCD Display backlight Solar home lighting system String Lights
Contextual Info: FOR IMMEDIATE RELEASE IXYS Contact: Dr. Octav Chirica IXYS Corporation Tel: 408-457-9000 IXYS Introduces New LED Driver Family with 40 V Integrated Synchronous Rectifier to drive up to 42 LEDs Milpitas, CA, and Biel, Switzerland. June 29, 2010 – IXYS Corporation NASDAQ: IXYS

7" LCD DISPLAY

Abstract: LCD Display backlight LDS8710 solar converter
Contextual Info: FOR IMMEDIATE RELEASE IXYS Contact: Dr. Octav Chirica IXYS Corporation Tel: 408-457-9000 IXYS Introduces Demo Boards for New LED Driver Family with 40 V Integrated Synchronous Rectifier to drive up to 42 LEDs Milpitas, CA, and Biel, Switzerland, August 19, 2010 – IXYS Corporation NASDAQ: IXYS

LBA716

Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division

IXYS Introduces Higher Operating Temperatures for Bi-Polar Modules

Abstract: MDMA200P1600SA MCMA200P1600SA MCMA200PD1600SA Phase-leg Rectifier Diode
Contextual Info: FOR IMMEDIATE RELEASE Contacts: Bradley Green, IXYS Switzerland, Tel: +41 323 744 020 Ronnie Ganitano, IXYS Corporation, Tel: 408-457-9000 IXYS Introduces Higher Operating Temperatures for Bi-Polar Modules Biel, Switzerland, May 4, 2010 – IXYS Corporation NASDAQ: IXYS , a leader in power

XYS launches New PolarP2TM Power MOSFET Family

Abstract: Ixtq460p2 IXFB120N50P2 mosfet ixys IXTH450P2 IXTP450P2 IXTQ450P2 IXTQ470P2 ixtq460
Contextual Info: IXYS Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 IXYS launches New PolarP2TM Power MOSFET Family Milpitas, CA. and Biel, Switzerland. July 15, 2010 – IXYS Corporation NASDAQ:IXYS announces today the release of its new PolarP2TM Power MOSFET family, IXYS’ latest generation of fast and

IGBT inverter calculation

Abstract: 3 phase IGBT inverter design design drive circuit of IGBT inverter circuit using IGBT module igbt igbt sixpack IXAN0070 IGBT JUNCTION TEMPERATURE CALCULATION igbt 600V 100A short circuit IGBT CHIP 1700V
Contextual Info: IXAN0070 Drive with the IXYS XPT IGBT IXYS used its expertise to design the optimal IGBT for motor drives applications By Iain Imrie, Jeroen van Zeeland, Ulrich Kelberlau, Vladimir Tsukanov and Elmar Wisotzki IXYS Corporation IXYS introduces the XPT IGBT, IXYS newest generation of short-circuit rated IGBTs with paralleling

IXEP1400

Abstract: CPC1706 CPC1020N
Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.

IXEP1400

Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.

IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages

Abstract: IXFZ520N075T2 IXTZ550N055T2
Contextual Info: Press Release Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages. Milpitas, CA. and Biel, Switzerland. October 5, 2010 – IXYS Corporation NASDAQ:IXYS announces

MMIX1F520N075T2

Contextual Info: Press Release Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 IXYS Introduces High-Current GigaMOS TrenchT2TM Power MOSFETs in New Proprietary SMPD Power Packages. Milpitas, CA. and Biel, Switzerland. October 7, 2010 – IXYS Corporation NASDAQ:IXYS announces the

xenon hid ballast

Abstract: Xenon HID Block Diagram circuit diagram ballast xenon single phase inverters circuit diagram solar inverters circuit diagram HID lamp ballast HID igniter xenon ballast single phase inverter mosfet ballast diagram
Contextual Info: POWER Efficiency Through Technology N E W P R O D U C T B R I E F ISOPLUS i4-PACTM Half-Bridge MOSFET Modules IXYS Introduces new isolated phase leg modules january 2010 OVERVIEW IXYS introduces new half-bridge MOSFET modules that are available in IXYS proprietary

Contextual Info: Welcome to the world of IXYS Semiconductors! IXYS is made up of a team that is dedicated to providing efficient, cost effective, semiconductor solutions to meet a multitude of power control needs. Headquartered in California’s Silicon Valley, IXYS has differentiated itself by focusing on the higher power end of the semiconductor product spectrum.

Inverter Welder

Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter
Contextual Info: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM

IXGP70N33

Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim

htz240f

Contextual Info: HIGH VOLTAGE RECTIFIERS January 2002 USA: IXYS Corporation 3540 Bassett Street • Santa Clara · CA 95054 Phone: 408 982-0700 · FAX: (408) 496-0670 e-mail: sales@ixys.com EUROPE: IXYS Semiconductor GmbH Edisonstr. 15 · Lampertheim · Germany Phone: +49.6206.503.0 · Fax: +49.6206.503.627

single phase inverter IGBT

Abstract: Single Phase to Three Phase Converter 3 phase igbt INVERTER ac motor eupec FB15R06KL4 inverter igbt circuit diagrams single phase to 3 phase inverter AC FP10R12YT3 FP15R12YT3 FP10R12YT3 eupec IGBT cross reference
Contextual Info: □ IXYS w Overview: IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond OCB module packaging technology, located in Lampertheim, Germany has extended its portfolio of IGBT

IXYS CORPORATION

Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
Contextual Info: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS

Westcode Announces New ‘Megawatt’ Press-Pack IGBT Product

Abstract: press-pack igbt T2250AB25E
Contextual Info: Press Release Contacts: Westcode Semiconductors Ltd, UK - Frank Wakeman, +44 1249 444524. IXYS Long Beach – Ray Segall, 562-296-6584 US sales enquiries only Westcode Announces New ‘Megawatt’ Press-Pack IGBT Product Biel, Switzerland, November 18, 2009 — IXYS Corporation (NASDAQ:IXYS) announced that

f g megamos

Abstract: megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE
Contextual Info: I X Y S CORP 16E 5 IS 4b fit55t Q000563 H H§ I T t-m MODULESand PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested

f g megamos

Abstract: megamos 13 megamos IXGE75N100Z ID 48 Megamos
Contextual Info: I X Y S CORP 16E 5 IS 4 b fit55t Q000563 H H§ ITt-m MODULES and PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested

IXBK55N300

Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250
Contextual Info: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking

75-12N07

Abstract: Fast Recovery Bridge Rectifier, 60A, 600V 7490A
Contextual Info: □ IXYS VUE 75-12N07 ECO-PAC Threee Phase Rectifier Bridge IdAV - 74 A VRRM = 1200V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED Prelim inary Data oD V V A c_ , -

DSB15IM45IB

Abstract: common cathode to220 DSA20C45PB DSA30C45HB DSA30C45 DSA30C45PB DSB30C30PB DSB30C45HB DSB30C45PB DSB30C60PB
Contextual Info: □ IXYS New Generation of Silicon Schottky rectifiers VER Y LO W V f R E C T I F I E R S R A N G I N G F R O M 8 T O 2 0 0 V O L T S F O R O R 'I N G A N D S M P S A P P L I C A T I O N S March 2006 Overview: IXYS Corporation - a leader in power semiconductors for Power Conversion and Motion Control

IXAN0001

Abstract: 0001 vienna rectifier GE SCR Manual 3 phase pfc design and of 1- vienna rectifier 3 phase inverters using mosfets circuit diagram "3-phase PFC" three phase rectifier pwm three phase three level active front end rectifier
Contextual Info: IXAN0001 3-Phase Power Factor Correction, Using Vienna Rectifier Approach and Modular Construction for Improved Overall Performance, Efficiency and Reliability1 Mr.Abhijit D. Pathak, Senior Applications Engineer, IXYS Corp., Santa Clara, CA U.S.A. Mr. Ralph E. Locher,