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    J 13009 - 2 Price and Stock

    onsemi FJP13009H2TU

    Bipolar Transistors - BJT NPN Sil Transistor
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    Mouser Electronics FJP13009H2TU 847
    • 1 $2.18
    • 10 $1.76
    • 100 $1.19
    • 1000 $0.827
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    onsemi FJP13009TU

    Bipolar Transistors - BJT NPN Sil Transistor
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    Mouser Electronics FJP13009TU 821
    • 1 $1.59
    • 10 $1.28
    • 100 $0.847
    • 1000 $0.591
    • 10000 $0.538
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    Kyocera AVX Components 300904102104JX

    KYOCERA TTP SPACE
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    Mouser Electronics 300904102104JX
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    Kyocera AVX Components 300904102154JX

    KYOCERA TTP SPACE
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    Mouser Electronics 300904102154JX
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    Kyocera AVX Components 300904103224JC

    KYOCERA TTP SPACE
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    Mouser Electronics 300904103224JC
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    J 13009 - 2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    E 13009 2

    Abstract: transistor E 13009 EB 13009 D e 13009 l p 13009 D 13009 K transistor mje EB 13009 e 13009 d transistor E 13009 l
    Contextual Info: / b aS3T31 001=113? 1 DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V ESE D T *" 3 3 - 1 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended fo r use


    OCR Scan     		aS3T31 O-220 MJE13008 bb53131 E 13009 2 transistor E 13009 EB 13009 D e 13009 l p 13009 D 13009 K transistor mje EB 13009 e 13009 d transistor E 13009 l PDF

    SR 13009

    Abstract: E 13009 e13009 transistor sr 13009 transistor E 13009 D 13009 K 13008 TRANSISTOR E 13009 L e 13009 f J 13009 - 2
    Contextual Info: Tem ic TE13008 • TE13009 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • High reverse voltage • Power dissipation Pu,| = 100 W • Glass passivation • Short switching times Applications Electronic lamp ballast circuits


    OCR Scan     		TE13008 TE13009 SR 13009 E 13009 e13009 transistor sr 13009 transistor E 13009 D 13009 K 13008 TRANSISTOR E 13009 L e 13009 f J 13009 - 2 PDF

    transistor E 13009

    Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
    Contextual Info: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10


    OCR Scan     		2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4I26 2N4400 2N4401 transistor E 13009 transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009 PDF

    j 13009

    Abstract: J 13009 - 2 e 13009 f mj 13009 E 13009 L p 13009 D 13009 K 13009R
    Contextual Info: ± 0 N m ü re ID Is- ; / l \ t * *4 CUL a. O * id OQ z -D z ^ Í7-* ; : * ' ^ <? 94V -0) ^ & 7 b * 'J ^ V ' S> 3 C IR C U IT *7 6 6 -^- - f a -fe . J» . : . ^ ^ IT : » H l . N O .1) A * * ^ ^7 ^ ^ e in . 3 /aml¿X _L<iO — 'V =*c t ^ » Ä i S I 5 0 . 3 pm ü i,_ b < ^ .^ r> ^ =V , 8*P*|$1 p.miiX J^ co * ¥ - æ ^


    OCR Scan     		J-12583 30-JAN j 13009 J 13009 - 2 e 13009 f mj 13009 E 13009 L p 13009 D 13009 K 13009R PDF

    176380-3

    Contextual Info: 4 I •h I *£#£ : o / t\ * : OD n U N ft I ^ i* >■:T ; 7 y ? X A 0 66-^- -f o ^ CUL 9 4 V - 0 J 7. 15 ft, A*. «3 ^ ^ ^ A *an-i±_ti-r : ? v ; A W t . 3>*mJiA_h.0D — v >r 'U -!'' * > v * » C » * * « 0. 3pm3C.ii , 0. 76jjmUjt_h.<75 f t > y , W « 1fJMJ, _fc<r>^ 9 > v *


    OCR Scan     		76jjm 76pro' 29/HAY/ 176380-3 PDF

    diode D45C

    Abstract: JE 800 transistor L146 IC BD800
    Contextual Info: STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O s u s V o lts M ax M in 8 500 700 f*FE M in /M a x @ lc |XS tf ps Amp M ax M ax M JF16006A 5 min 8 2.5 0.25 5 B U 1008A F 3 min 3 min 4.5 4.5 8* 8* 0.5*


    OCR Scan     		340B-03 JF16006A JF10012# 100/12k JF16212* JF16018* JF16206 D44VH10 D45VH diode D45C JE 800 transistor L146 IC BD800 PDF

    Leach relay M83536

    Abstract: MS25271-D1 M83536 M83536/10-024 M39016-6-109L MS27400 MS27743 MS27401 M83536/2-024 MS27400-9
    Contextual Info: QPL Qualified Products Listing Solutions for Power Switching and Control Authorized Worldwide Distributors UNITED STATES ALABAMA Avnet Electronics Marketing Huntsville Ph: 256 837-8700; Fax: 830-2565 ARIZONA Avnet Electronics Marketing Phoenix Ph: (480) 643-5600; Fax: 643-5775


    Original     		F-57430 5/2004/2K Leach relay M83536 MS25271-D1 M83536 M83536/10-024 M39016-6-109L MS27400 MS27743 MS27401 M83536/2-024 MS27400-9 PDF

    MT4C16270DJ-7

    Contextual Info: M IC R O N Mi MT4C16270 256Kx 16 DRAM TtoiMxasr. MC. DRAM 256K x 16 DRAM EDO PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3m W standby; 375m W active, typical


    OCR Scan     		MT4C16270 256Kx 512-cycle 40-Pin MT4C1027Q MT4C16270DJ-7 PDF

    e13009

    Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and


    OCR Scan     		MJE13005* e13009 E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data PDF

    bta1b

    Abstract: ANI 1015 1N3064 1N916 binary multiplier
    Contextual Info: f MI L - M- 3 8 5 1 0 / 3 1 8 A 9 August 1983 SUPERSEDI NG MI L - M- 3 8 5 1 0 / 3 1 8 USAF 20 A p r i l 1979 MI L I T ARY S P E C I F I C A T I O N MI C R OC I R C U I T S , D I G I T A L , LOW POWER SCHOTTKY T T L , BI NARY MU L T I P L I E R , MONOLI THI C S I L I C ON


    OCR Scan     		MIL-M-38510/318A MIL-M-38510/318 MIL-M-38510, bta1b ANI 1015 1N3064 1N916 binary multiplier PDF

    2yl1

    Abstract: GNS 3011 2SC3003 13007 h3 324C 3014-100 54ls541 die itt diodes lz 1a1 hi1a2 E 13007
    Contextual Info: MIL-M-38510/324C 15 OCTOBER 1987 SUPERSEDING-MIL-M-38510/324B 16 February 1984 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL OCTAL BUFFER GATES WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON This specification Is approved for use by all Depart­


    OCR Scan     		HIL-M-38510/324C MIL-M-38510/324B MIL-M-38510, MIL-M-38510/324C 2yl1 GNS 3011 2SC3003 13007 h3 324C 3014-100 54ls541 die itt diodes lz 1a1 hi1a2 E 13007 PDF

    54HC08

    Abstract: SR 13003 E 13007-1 54hc32 J006 13003 sd 9lc marking E 13007 E 13009 z EN 13009
    Contextual Info: MIL-M-38510/652A 15 Ma* 1987 5 U P L K 3 E Ü I N G -MIL-M-38510/652 31 Ma r c h 1986 M I LI TARY S PECI FI CAT I ON »„ n „ . M I C R O C I R C U I T S , D I G I T A L , HIGH SPEED, CMOS, AND GATES, OR GATES, MONOLITHIC S I L I C O N , P O S I T I V E LOGIC


    OCR Scan     		MIL-M-38510/652A MIL-M-38510/652 Sha11 MIL-M-38510, 54HC32 54HC86 54HC08 54HC11 MIL-M-38510/652A 60VERMENT SR 13003 E 13007-1 J006 13003 sd 9lc marking E 13007 E 13009 z EN 13009 PDF