J JB TRANSISTOR Search Results

Contextual Info: h ’7 > y X ^ / T ransistors 2SD1943 2SD1943 NPN '> • ; = ! > i£ J i> J t ^ ± illiffl/L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor h FE V 'm i' Vr>4 V 'A ''J| "r • ^JB 'ri'iilS /D im en sio ns Unit: mm 1) 4. 5 ± 0 . 2 : h FE =

Contextual Info: j Jb£.mL-L,onaiLetoi L/^ 10ducts. One 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1062 Silicon PNP Power Transistor a <x DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-120V(Min)

Contextual Info: D 1 I O 3 O Z - 1 2 O 3 a )V ^<7 — : Outline Drawings P O W ER TRA N SISTO R MODULE : Features • SBfiJGE High Voltage • 7 'J — 'J V • ASO Jb'"J2iL' -f Krt/BE Including Free W heeling Diode Excellent Safe Operating Area Insulated Type : A p p lica tio n s

TRANSISTOR D401

Abstract: D401 -y 2SD1963 D4011
Contextual Info: h 7 > S' 7 $ /Transistors O “ C m Q A * • ^ w w 2SD1963 it f ^ ^ '> 7 ^ y u - ^ 0 N P N y ,; n > K 7 > y ^ ^ Epitaxial Planar NPN Silicon Transistor fé S â fc ï^ J iflte ffl/L o w Freq. Power Amp. 7 s h P ? K 7 7 7 V j- f f l/S t r o b o Flash. • 51-JB‘T a i a / Dimensions Unit : mm)

2SC4045

Contextual Info: 2SC4045 h 7 y V 7» $ /Transistors 2SC 4045 + y'JH> V ÿ s v W Epitaxial Planar NPN Silicon Transistor Amplifier • ÿJ-JB'^'iisEI/Dimensions Unit : mm 1) fT t f M i-'o fT=3.2GHz(Typ.) 2) Ce • rbb’ < ¡ÜŸÜÎio Ce • rbb'=4ps(Typ.) 3) N F A ^ J 'il'o

PC401 solder mask

Abstract: GP-039-2 GP-039 CD54-330K GP039 LT1109 LT1109A LT1109CS8-12 MBRS120T3 CD54-330
Contextual Info: DEMO MANUAL DC019 FLASH MEMORY Vpp GENERATOR / X L IP K A ß . JB L m J TECHNOLOGY LT1109 +5V to +12V Converter 60mA Output Current DCSCRIPTIOfl The Fiash Memory Vpp Generator demonstration circuit is a complete, functional DC-to-DC converter capable of supplying 12V ±5% at up to 60mA from a 5V ±10% input.

2SB1535F5

Abstract: 2SB1535
Contextual Info: h7 > V £ /Transistors 2SB1535F5 Epitaxial Planar PNP Silicon Transistor féüá£S27*0,fÍ/l-o w Freq. Power Amp. • il-JB ^äiS/D im ensions Unit : mm • &J& 1) V ce (sat) 6. 5 + 0. 2 VcE (sat)S—0.6V 5 l + 3- 1 - 00 .- 21 r , i. (lc /lB = -0 .5 5 A /-0 .0 3 A )

a7z transistor

Contextual Info: L.1 8 3 6 8 6 0 2 S O L I T R O N _D E V IÇES D I ÛBbflbOS □GGlETfl 3 | ~ INC 61C 0 1 2 9 8 olitron Devices, Inc. S P E C I F I C A T I O N S D 7"'z 7 ' ? ï £ P P Cé J>£_ 9 / 3 P */A7Z NO.: . & A Ï V £ ?J . - - TYPE: A / P / / S /L /C & A J P o u JB Z

Tektronix 336

Abstract: Tektronix 464 Tektronix schematic tektronix capacitor diode EB 24
Contextual Info: TEKTRONIX INC / 4bE MELECS ß cIObl7S D 0000217 QuickChip 7 Integrated Circuit Array fi TEKP1 T -^ Z -3 ï T ektronix / Te and Measurement Test E L jb J 1 • I 00 ■ i i ■I ■s a s S ' l i ' B i ' c n B I B B I I B B ■—H W IimilMII HNHOHHHMNNHIHNIWHIMHMM

Contextual Info: D E jb llS T S a V . j M I C R O S E M I CORP/POWLK □ 2 "í;~- oaoomt, □ D T - 2 3 — Á á - ' r O - •*- V - '- i - í , / «"i'-' v.: -rw -.Y.;' .•*•C-4-,-.■1 #*=; v:-?-¿. ' T U C H IM O I.O IJV .s .* „ -r - ;» . . CÎVW; ?-V . ¿ .-f'

upa74ha

Abstract: UPA74 PA74H gw 348 PA74HA k 2445 transistor
Contextual Info: NEC Aj i ï T / \ W V -7 9 Com pound Transistor f x N L it ¿¿PA74HA P N X + □ ] h I M ift fé S H f& K iJ t I B fll NPN Silicon Epitaxial Compound Transistor Differential Amplifier #Ä /FEA TU RES O 1 chip ffîiè 'C Jb h flìsb , - 4 T 1 Ë J V B E = 2 mV T Y P . )

ba6257

Abstract: t 326 Transistor
Contextual Info: BA6257 B À 6 2 5 7 • 7 eh * * * K 7 - r 7-Channel Driver a • ^JB rfiS IS I/D im ensions Unit : mm B A 6 2 5 7 li, 7 8A>)<09$RI7’J US 1 K K 5 'T / ''T 't o MOS I C A ' 6 * m K ? < ?'T' È 5 J: 9 A * ■f> £ - ? > * # & < , K £ ( * j* L , D lP ie p in A tJ T H K U ^ I -t'ilfiS i: U T i ' S t .

Contextual Info: 2SB852K h7 >y'x £ /Transistors O C D Q C O I f O D O W ^ IV x -A -izi-jb K PNPy'ja>$-y>h>h7>y'Xii [ ilia 'l l & 7s -f y-J- > ^ f f l/H ig h Gain Am p. & Sw itching Epitaxial Planar Super M in i-M o ld PNP Silicon Darlington T ransistor • W B rrife E I/D im e n s io n s U nit : mm

2SD1017

Abstract: 2SD101
Contextual Info: 2S D 1017 2SD1017 N P N = m * £ « t ^ '> y □ "s ' h ~7 NPN Silicon Triple Diffused Transistor ss ? — ? n ; w * m « i ih a * Color TV l w Re9"""or 0u,c“, *1- [2I/PACKAGE DIMENSIONS o [Mjütü X" Jb ò o Vceo —250 V Unit : mm o j  & g ^ s t â i i f t ^ e s æ - c s í . , - r -yX > r ^ m .

Contextual Info: MMBTH10W VHF/UHF Transistors COLLECTOR 3 3 P b Lead Pb -Free 1 1 BASE FEATURES: 2 2 EMITTER SOT-323(SC-70) * We declare that the material of product compliance with RoHS requirements. Maximum Ratings (TA=25°C Unlesso therwise noted) Rating Symbol Value Unit

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10QWT1 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc 2 SC-70/SOT-323

LMBTH10QLT1

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 LMBTH10QLT1 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit CEO 25 Vdc Vdc Vdc Collector–Emitter Voltage V Collector–Base Voltage V CBO 30 Emitter–Base Voltage V EBO 3.0 2 SOT-23

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. Ordering Information LMBTH10QLT1G Device Marking Shipping LMBTH10QLT1G 3EQ 3000/Tape&Reel LMBTH10QLT3G 3EQ 10000/Tape&Reel 3 1 MAXIMUM RATINGS

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 LMBTH10PLT1 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit CEO 20 Vdc Vdc Vdc Collector–Emitter Voltage V Collector–Base Voltage V CBO 30 Emitter–Base Voltage V EBO 3.0 2 SOT-23

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 LMBTH10QLT1 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit CEO 25 Vdc Vdc Vdc Collector–Emitter Voltage V Collector–Base Voltage V CBO 30 Emitter–Base Voltage V EBO 3.0 2 SOT-23

LMBTH10LT1

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc SOT–23

sc70 marking 3Q

Abstract: MPS 425 5 pin sc70 marking 3Q LMBTH10QWT1
Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10QWT1 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc 2 SC-70/SOT-323

MPS 425

Abstract: LMBTH10WT1
Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10WT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc SC-70/SOT–323