J Y W MARKING Search Results

Contextual Info: DIM. A * * B ALTERNATIVE PIN LOCATION MARKING E W L T PIN 1 X Y C K1 H K P J A B C E F H J K K1 L P T W X Y MIN. TYP. MAX. 0.697 17.70 0.711 (18.06) 0.286 (7.26) 0.299 (7.59) 0.088 (2.24) 0.105 (2.67) 0.390 (9.90) 0.419 (10.64) 0.650 (16.51) 0.003 (0.08)

2952A

Abstract: SHINDENGEN DIODE
Contextual Info: y 3 y h ^/'v UT ^ —K S ch ottk y Barrier Diode Axial Diode m D2S4M 40V 2A •T j OUTLINE DIMENSIONS Case : 0.8 ^ II 1 5 0 TC T o 0 ( 2) M • P h R S M T’ I'y Z J 'J 'J ifiSÏ • 0 .8 0 U - K W & W K iN ) ''C o lo r c o d e (S ilv e r) ffl Ì* # < 5 0 ] S M ia

Contextual Info: 1=1 0,1 Ig h 1= 1 0.1 M b \ : ^jl fT^TI tW~WnD . ff^TIH^W fl^~W H^>l H 1 H^~W H^>l H^Wl H^TI H^>l H^~Wl H^Wl fl^Wl ff^TI H^~WH^Wl H^>l Ll fl^W H^TIH^Wl | [ [-c s 3 fl^j~^ii-4T^|^n-n^|^B- ir^j^n- n^p^n tf^p n -ff^pB-V ! ^ ff< pn -n ^ j ^ V i F Y W | ^ i r ^ | ^ i ^ 4 i y T H f , j ^ ^

Contextual Info: Super Fast Recovery Diode Twin Diode OUTLINE SF5LC30 300V 5A Feature • trr=30ns • 7 J IÆ -J I/ K • trr=30ns • Ü g S iilŒ 2k V S I I • Dielectric Strength 2kV • T .'f y f y 'r w s • Switching Regulator • 7 5 ^ 7 tv -J L / • Fly W heel

Contextual Info: DIM. TYP. MIN. MAX. A * * ALTERNATIVE PIN LOCATION MARKING B E W L T PIN 1 X Y C K1 H K P J F A B C E F H J K K1 L P T W X Y 0.395 10.03 0.413 (10.49) 0.286 (7.26) 0.299 (7.59) 0.088 (2.24) 0.105 (2.67) 0.390 (9.90) 0.419 (10.64) 0.350 (8.89) 0.003 (0.08)

Contextual Info: DIM. A * * B ALTERNATIVE PIN LOCATION MARKING E W L T PIN 1 X Y C K1 H K P J F A B C E F H J K K1 L P T W X Y TYP. MIN. MAX. 0.495 12.57 0.510 (12.95) 0.286 (7.26) 0.299 (7.59) 0.088 (2.24) 0.105 (2.67) 0.390 (9.90) 0.419 (10.64) 0.450 (11.43) 0.003 (0.08)

Contextual Info: DIM. A * * B ALTERNATIVE PIN LOCATION MARKING E W L T PIN 1 X Y C K K1 H P J F A B C E F H J K K1 L P T W X Y MIN. TYP. MAX. 0.613 15.57 0.597 (15.16) 0.286 (7.26) 0.299 (7.59) 0.093 (2.36) 0.105 (2.67) 0.390 (9.90) 0.419 (10.64) 0.550 (14.1) 0.003 (0.08)

LT 2806

Abstract: trr M7 diode dc m7 pnp 855 1SS123 JT MARKING 1SS12
Contextual Info: z r — •$? • y — h NEC X " f y 3- > 'J $'<4 K Switching Diode 1SS123 w .n & M x t ° ^ = ¥ v 7 7; u i i v f; = i > ^ 7 ; u ^ y ^ - - k w & T s 'iv + y v m Silicon Epitaxial Double Diode (Series Connected) High Speed Switching W& / PACKAGE DIMENSIONS

T0247 package

Abstract: alpha marking code ALPHA YEAR CODE K10B60D
Contextual Info: ALPHA & OMEGA SEMICONDUCTOR T0247 PACKAGE MARKING DESCRIPTION oI 1 P o y ^ K 1 0B60D ^ K 1 0B60D FAYWLT FAYWLT O \i \J U Standard product NOTE: LOGO K10B60D F A Y W L&T 1 U° ^ O J 1 o 0 - AOS Logo - Part number code - Fab code - Assembly location code - Year code

Contextual Info: ¿L í,í. >Y :-r m%á 3ÔE » MICRON TECHNOLOGY INC itM^iL V • blllSMñ O G Q S W . .j/,»l-4*>,J"'V 'y y 1 «ÎIRN, ^ -T ta T ^ ÎdâMta * * - ,Æ REPLACES: MT85C16$4 64Kx 16 SRAM SRAM MODULE FEATURES • « • • • • PIN ASSIGNMENT (Top View)

A83-006

Abstract: ERA83-006 LM MARKING A323 marking code a83
Contextual Info: ERA83-006 ia a±'MBa s t y y ÿ j j -—p : Outline Drawings SCHOTTKY BARRIER DIODE • $tH : : Features •ftVf ■H/-F Lo w V f : Marking h-5-3- r : n S u p e r high speed sw itch in g. • C o lo r co d e : W h it e a n te « » « « « ~9 High reliability by planer design

8G1014-Z

Abstract: 8G1044C-Z 8G1066 AC125V AC1500V 8GA1016-Z 8G2012-Z 8GA1014-Z fujisokuswitches 8G2016
Contextual Info: COPAL ELECTRONICS 8G R oH SÜtffäß 0 * y z s v 7 W ' f y & m h y jls z j y ? Washable Type Miniature Toggle Switches •4$ A -K it— ^ 7 h ffllZ $T<DT\ Zf'J > ? 'È £ t * 4 o "J V 5 r o S Æ £ i i ft 3 tz » I t t f - $ - if-0 1 ' T i ' £ t

1084CD

Contextual Info: SWE-Family AC-DC Converters <100 W Benign Environment SWE-Family TOKO 50/75/100 W AC-DC Converters Input to ou tpu t isolation S ingle output <y‘.y x 'x iW ltf^ h i^ f * V^,\ J . .W /w V .'.ViV.'.V.V.V.W < a. 5 V<w- Â 'i. •X'iàf.WAA . .' • Noise standard: meets EN 55011/55022

7H diode

Abstract: IPA50R140CP DIODE marking ED X9 diode marking BEM LM7m
Contextual Info: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W 4 EHB: M ?: ; 8;IJ/ =L"a`# ?D 1,   W EM ;IJ<?=KH; E<C ;H?J/ , + N . Y V !0 8M\_Sj .) O R =L"a`#%_Sj )'*-) " -1 `< Q Y%fkb W 2 BJH7 BEM =7J ; 9>7H=; W " NJH;C ; : L : JH7J;: W % ?=> F;7A 9KHH;DJ97F78?B?JO

MARKING aep

Contextual Info: ' t y y ÿ ' f # —K : Outline Drawings SCHOTTKY BARRIER DIODE • 4 # f i ’ Features • l&Vc Lo w V f ■ : Super high speed sw itchin g. »aft 1 J» >1 ■K 1 ? High reliability by planer design. • Marking 9 oi 3 W :ft5m m b'7f S KM A «TBI WiH^nW

Contextual Info: FERYSTER 25±0.2 Mounting holes 13.1-0.2 2 3 10JJ\ 4 J \ f <J J f L6 01.3+0.1 in co o c\j CM CD CM ( N VJ [ { \ f \ \ J f \ \ ) { •s ) 1 □ □ 10 9 8 7 6 5 4 x 5 = 20 Pin 1 marking 18-0.2 16.4 min. 03 CD o I CO WWW. F K F E R Y S T E R spo lka ja w n a B. i Z . S o b kb w

IC1602

Abstract: IC160Z-0324 bb45 RE32 ic160z-0324-30" 6QZ-0844-4Q IC TT 3043
Contextual Info: IC160Series PLCC YAMAICHI 1.27mm Pitch euecTRONics Features v f r v K i& '6 ^ t £ jL » ^ - r 7 ) n -y a y y ^ J im t h ( H H S M T ^ - r ^ : 5.0mmN te / u tcT * *j 7 $ ^ 7 : 6.0mm) S M S r W R o H S 3 i^ i5 Low-profile design mountable on PCB at height 5.0mm (SMT)

Contextual Info: Panasonic S S ecwg iit it J lt S = Equipped with a Safety Mechanism= Metallized Polyester/Polypropylene Film Capacitor f /w x w w fs tfa y jv * Type Plastic Film Capacitors ECWG / ? 7 4 X K # >Ji X f ^ 7 4 IW A /# D 7 "n £ 1 ^ > 7 T > l'.A £ fflV » fc *S i§ 3 W *j& , * J I 5 t e i M B * - - X * 8 ,

smd diode schottky code marking 1A

Abstract: marking code SMD xf smd marking XF diode MARKING CODE A9
Contextual Info: Schottky Barrier Diode Single Diode mtm D1 FJ10 OUTLINE U n it-m m Package : 1F W eight 0.058g T y p i) / Ccilhode mark 100V 1A Feature (< • /J v g y S M D • S m all S M D • Tj=150°C • T j= 1 5 0 °C • •(SIr= 0 .2 m A • L o w Ir = 0 .2 itiA

h7d marking

Contextual Info: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W฀4EHB:M?:;฀8;IJ฀/ =L"a`#฀?D฀1, W฀ EM;IJ฀<?=KH;฀E<฀C;H?J฀/,+฀N฀.Y V !0฀8M\_Sj .) O R =L"a`#%_Sj )'*-)  -1 `< Q Y%fkb W฀2BJH7฀BEM฀=7J;฀9>7H=; W฀"NJH;C;฀:L :J฀H7J;:

ERA85-009

Contextual Info: ' t y y ÿ ' f # —K : O utline Drawings SCH O TTK Y BARRIER DIODE • 4 # f i ’ Features • l&Vc Lo w V f ■ : Super high speed sw itchin g. »aft oi 1 J» 1 9 1 > ■K High reliability by planer design. • Marking ? 3 W :ft5m m b'7f S KM A «TBI 1 0 f l- 0 . l l f l - N . 1 2 Æ -D

7flu

Abstract: DRS8016 DRR7110 DRR7116 DRS7016 DRR7016 DRS7116 DRR7010 AC200 DC100V
Contextual Info: D R S - D R R ^ ^ W U t m 7 4 y J n - 9 \ J - * { y * Ä 7 .5 Hyper-Miniature Dip Rotary Switches (P C S iffiJ/F o r PC Mount Terminations) • . Hyper-miniature Size ( 7 .5 V ) M ) 1. o f 1 /2 volume of conventional version for high density

DE473

Abstract: EXBH9 EXBH
Contextual Info: New SMT SIP Resistor Networks S i P ? - y 7 & i & X * ‘y V 7 - f EXBH>'J-X — New SMT SIP Resistor Networks Series EXBH SIP?1' ^ ^ NEW: SIP-CHIP ✓ • f t IP J - y - f - / / é / / Features * • w .i i s r f f i f c • Jum per function

Contextual Info: •*» - *•^ ¿ a ir [ j ' Y 0%T80^ T““* Y U W h w ¿’“ 'i W A D V A N C E D C Y 7 C 6 4 2 1 1 /1 2 /1 3 IN F O R M A T IO N C Y 7 C 6 4 3 1 1 /1 2 /1 3 CY7C64211/12/13 CY7C64311/12/13 Full-Speed USB 12 Mbps Microcontroller Cypress Sem iconductor Corporation