J Y W SOT23 Search Results
J Y W SOT23 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BAV99 |
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Switching Diode, 100 V, 0.215 A, SOT23 |
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TBAS16 |
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Switching Diode, 80 V, 0.215 A, SOT23 |
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TBAV70 |
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Switching Diode, 80 V, 0.215 A, SOT23 |
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TBAW56 |
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Switching Diode, 80 V, 0.215 A, SOT23 |
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BAV70 |
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Switching Diode, 100 V, 0.215 A, SOT23 |
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J Y W SOT23 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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S0T23-5
Abstract: TSS0P16 S0T23 sc 6038 LM4765T LM2710 M1117 SDT23 TSS0P14 LM1117
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OCR Scan |
SC-70 OT-23 6JA100-190 OT-223 ejA75-110Â O-263 CSP-32 6JA88 T0-220 O-252 S0T23-5 TSS0P16 S0T23 sc 6038 LM4765T LM2710 M1117 SDT23 TSS0P14 LM1117 | |
MAX4304
Abstract: MAX4105
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OCR Scan |
740MHz, OT23-5 MAX4104/MAX4105/MAX4304/MAX4305 AX4104 MAX4304, MAX4105 400V/sec MAX4305 OT-23 MAX4304 | |
MAX4333Contextual Info: 19-1192; Rev 1; 4/97 y k i y j x i v k i Single/D ual/Q uad, L o w -P o w e r, Single-Supply, R a i l - t o - R a i l I/O Op A m p s w i t h S h u t d o w n Low -pow er operation com bined with rail-to-rail input com m on-m ode range and output swing makes these |
OCR Scan |
MAX4330 MAX4333 | |
MAX4769
Abstract: Nippon capacitors MAX4166EPA
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OCR Scan |
MAX4165-M AX4169 MAX4166/MAX4168 MAX4769 Nippon capacitors MAX4166EPA | |
sj 2025 for amplifiers
Abstract: Nippon capacitors
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OCR Scan |
4165-M MAX4166/MAX4168 28-PIN sj 2025 for amplifiers Nippon capacitors | |
Contextual Info: 13-1395; Rev 0; 10/98 y k i y j x i v k i Low-Cost, Low-Power, Low-Dropout, SOT23-3 Voltage References Features The M A X 6 0 0 1 -M A X 6 0 0 5 fa m ily of SOT23, lo w -co st series voltage references meets the cost advantage of shunt references and offers the power-saving advantage |
OCR Scan |
OT23-3 MAX6001 X6001 | |
SOT23-6 AAAE
Abstract: MAX4223 IN-87 la sot23-8 analog MH SOT23-8 av 8114 MAX4223ESA
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OCR Scan |
MAX4223-MAX4228 MAX4223/MAX4224/MAX4226/MAX4228 350pA MAX4223/ MAX4225/MAX4226 10pMAX MAX4223/MAX4224 MAX4225-MAX4228 4223-M MAX4224EUT-T SOT23-6 AAAE MAX4223 IN-87 la sot23-8 analog MH SOT23-8 av 8114 MAX4223ESA | |
NE68018Contextual Info: Low Noise Bipolar Transistors i ir * J * k ji W ft •i íU fÁ A Vac S I P W W NF - fi* ' VtP t y p m tm VCE V) (Sm I* Ic TYP (mA) (dB) tr W tfce iiS lS 1 PÉ TtP «m SURFACE MOUNT PLASTIC Faxon PÄ M w SS Daratnd Doc No. NE68018 2.0 6 5 1.8 10.0 6 10 |
OCR Scan |
OT-23) NE68018 | |
MAX4333Contextual Info: 19- 1192; R e v 3 ; 2 /9 8 y k i y j x i v k i Single/D ual/Q uad, L o w -P o w e r, Single-Supply, R a i l-t o - R a il I/O Op A m p s w i t h S h u t d o w n The M A X 4 33 0 -M A X 43 34 s in g le /d u a l/q u a d op am ps com bine a wide 3MHz bandwidth, low-power operation, |
OCR Scan |
245pA MAX4331/ MAX4333 28-PIN | |
Contextual Info: 19-1062; Rev 0; 6/96 y k i y j x i v k i Low -Voltage, SPST, CMOS Analog Sw itches _ Features The M AX4501/M A X4502 are s in g le -p o le /s in g le -th ro w SPST , lo w -v o lta g e , s in g le -s u p p ly , C M O S a n a lo g s w itch e s. The M AX4501 is no rm a lly o pen (NO). The |
OCR Scan |
AX4501/M X4502 AX4501 MAX4502 OT23-5 S01/M 250C2 | |
lg R500 block diagram
Abstract: RF remote control circuit diagram
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OCR Scan |
AX1624/M X1625 lg R500 block diagram RF remote control circuit diagram | |
BCW60 Series
Abstract: BCW60 BCW60A BCW60B BCW60C BCW60D
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OCR Scan |
EM573 BCW60 OT-23. DD24S7b BCW60 Series BCW60A BCW60B BCW60C BCW60D | |
ic abaj
Abstract: mark EA SOT23-5 Nippon capacitors MAX4333
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OCR Scan |
AX4330-MAX4334 245pA 250mV MAX4331/ MAX4333 ic abaj mark EA SOT23-5 Nippon capacitors | |
Contextual Info: National 3* Se mi c o n du c t j r CQ c/> c CLC452 S i n g l e S u p p l y , L o w - P o w e r , High O u t p u t , Current Feedback Amplifier General Description Features The CLC452 has a new output stage that delivers high output drive current 100mA , but consumes minimal quiescent supply |
OCR Scan |
CLC452 CLC452 100mA) 130MHz 00V/fis | |
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Contextual Info: vtS H Â Y ▼ _BAT54/A/C/S Vishay Telefunken Surface Mount Schottky Barrier Diodes Features • L o w T u rn -o n V o lta g e • F a st S w itc h in g • PN J u n c tio n G u a rd R ing fo r T ra n s ie n t a n d ESD P ro te ctio n |
OCR Scan |
BAT54/A/C/S D-74025 -Apr-99 | |
08 sot23
Abstract: LG SOT23 S269-BO
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OCR Scan |
S269-BO 100mA, OHL01698, OHL01693, OHL01208, OHL01207, OHL01278, OHLOH93, OHL01672, OHL01673, 08 sot23 LG SOT23 | |
sot23 mark code AE
Abstract: Nippon capacitors
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OCR Scan |
MAX4174/5) MAX4174/5, MAX4274/5) MAX4281/2/4) MAX4175/MAX4275) 23MHz 470pF MAX4281 sot23 mark code AE Nippon capacitors | |
BR571Contextual Info: MOTOROLA SC ÎXSTRS/R F> 6 3 6 7 2 5 4 MOTOROLA SC STD D | b3t?e5M UD7Ö7DÖ 1 X S T R S /R F 89D 7 8 7 0 8 D - p - j f MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPS571 MXR571 MMBR571 N P N Silicon High Frequency T ransistors . . . d e s ig n e d for lo w noise, w id e d y n a m ic ra nge front-end am plifiers a n d lo w -n oise |
OCR Scan |
Typ041 150BSC BR571 | |
TS-2306-EContextual Info: S T S 2306E S amHop Microelectronics C orp. J an. 10 2008 V er1.0 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. |
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2306E OT-23 OT-23 TS-2306-E | |
HM SOT23-5
Abstract: MAX433 25X2 MAX4334 EUA SOT23-8 Nippon capacitors MAX4333
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OCR Scan |
245iiA OT23-5 MAX4330) 250iiV AX4331 /MAX4333) HM SOT23-5 MAX433 25X2 MAX4334 EUA SOT23-8 Nippon capacitors MAX4333 | |
Contextual Info: 19-4770; Rev 0; 8/98 y k i y j x i v k i Single/Dual/Octal CMOS S w i t c h D e b o u n c e r s _ F e a t u r e s The M A X 6816/M A X 6817/M A X 6818 are s in g le , du a l, and octal sw itch d e b o u n c e rs th a t p ro v id e clean interfacing |
OCR Scan |
6816/M 6817/M | |
TS-3401Contextual Info: S T S 3401 S amHop Microelectronics C orp. J un.15 2004 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S ID -30V -3A F E AT UR E S S uper high dense cell design for low R DS ON . ( m W ) Max R DS (ON) R ugged and reliable. 75 @ V G S = -10V |
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OT-23 OT-23 TS-3401 | |
Contextual Info: S T S 2307 S amHop Microelectronics C orp. J UL.30 2004 v1.1 P -C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. |
Original |
OT-23 OT-23 | |
s2301Contextual Info: S T S 2301 S amHop Microelectronics C orp. J UL.30 2004 ver1.1 P -C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S -20V ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. |
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OT-23 OT-23 s2301 |