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    PanJit Semiconductor

    PanJit Semiconductor P4SMAJ12_R2_00001

    ESD Protection Diodes / TVS Diodes 400W Transient Voltage Suppressors 12V UNI
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    NAC P4SMAJ12_R2_00001 7,500
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    PanJit Semiconductor P4SMAJ12_R2

    Surface Mount Transient Voltage Suppressor - 7IN. REEL. Package Type: SMA
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    NAC P4SMAJ12_R2 Reel 1,800
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    J12R2 Datasheets Context Search

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    6726AW

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6726A Product Preview 128K x 8 Bit Fast Static Random Access Memory The M C M 6726A is a 1,048,576 b it static random a ccess m em ory organized as 131,072 x 8 bits. This device is fab rica ted using high perfo rm a n ce silicon-gate


    OCR Scan     		MCM6726A MCM6726AW 6726AW J15R2 J10R2 PDF

    26DQ3

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67P804 Product Preview 256K x 4 Bit Synchronous Static RAM with Registered Outputs The M otorola M C M 67P 804 is a 1.048,576 bit static random a ccess m em ory organized as 262,144 x 4 bits. This device is fabricated using M otorola's highperform ance sllicon-gate B iC M O S technology. It fea tu re s separate TT L input and


    OCR Scan     		MCM67P804 DQ255i MCM67P804 67P804 67P804W J10R2 MCM67P804W J12R2 26DQ3 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256K x 4 Bit Separate I/O Synchronous Fast Static RAM The MCM67Q804 is a 1,048,576 bit static random access nemory, organized as 262,144 x 4 bits. This device is fabricated using Motorola’s high-performance silicon-gate BiCMOS technology. It features separate TTL input and output buff­


    OCR Scan     		MCM67Q804 MCM67 67Q804 J10R2 J12R2 MCM67Q804 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6726 128K x 8 Bit Fast Static Random Access Memory The MCM6726 is a 1,048,576 bit static random access memory organized as 131,072 words of 8 bits. This device is fabricated using high performance silicongate BiCMOS technology. Static design eliminates the need for external clocks


    OCR Scan     		MCM6726 MCM67; J10R2 J12R2 PDF

    101G34

    Abstract: No abstract text available
    Text: Oroer this docirninnt SEMICONDUCTOR TECHNICAL DATA by mcmctcwow MCM67Q804 256K x 4 Bit Separate I/O Synchronous Fast Static RAM The M C M 67Q 804 is a 1,048,576 bit static random access memory, organized as 262,144 x 4 bits. It features separate TTL input and output buffers, which are


    OCR Scan     		MCM67Q804/D 101G34 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6728 256K x 4 Bit Fast Static Random Access Memory The MCM6728 is a 1,048,576 bit static random access memory organized as 262,144 words of 4 bits. This device is fabricated using high performance silicon-gate BiCMOS technology. Static design eliminates the need for external clocks or timing


    OCR Scan     		MCM6728 J10R2 J12R2 J15R2 PDF

    MCM6706A-12

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6706A 32K x 8 Bit Static Random Access Memory The MCM6706A is a 262,144 bit static random access memory organized as 32,768 words of 8 bits, fabricated using high performance silicon-gate BiCMOS technology. Static design eliminates the need for external clocks or timing strobes.


    OCR Scan     		MCM6706A 28-lead MCM6706A-8 CM6706A-10= 67Q6A 6706AJ8 6706AJ10 6706AJ12 MCM6706A-12 PDF

    MCM6209C

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6209C Advance Information 64K x 4 Bit Fast Static RAM With Output Enable The M C M 6209C is fabricated using Motorola's high-performance silicon-gate C M O S technology. Static design eliminates the need for external clocks or timing strobes,


    OCR Scan     		MCM6209C 6209C 6209CP15 6209CP20 6209CP25 6209CP35 6209CJ12 6209CJ20 MCM6209C PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6728 256K x 4 Bit Fast Static Random Access Memory The MCM6728 is a 1,0-18,576 bit static random access memory organized as 262,144 words of 4 bits. This device is fabricated using high performance silicon— gate BiCMOS technology. Static design eliminates the need for external clocks


    OCR Scan     		MCM6728 MCM6728 J10R2 J12R2 PDF

    J10R2

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6729A Product Preview 256K x 4 Bit Fast Static Random Access Memory The M C M 6729A is a 1,048,576 bit static random a ccess m em ory orga n ized as 262,144 x 4 bits. This device is fabricated using high perform ance silicon-gate


    OCR Scan     		MCM6729A 6729AW J10R2 729AW J12R2 MCM6729AW J15R2 J10R2 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6264C 8K x 8 Bit Fast Static RAM The M C M 6264C is fa b rica ted using M otorola's high—f erform ance s ilic o n -g a te C M O S technology. Static design e lim inates th e need fo external clocks or tim ing strobes, w hile C M O S circuitry reduces pow e r consu nption and provides for


    OCR Scan     		6264C 6264C MCM6264CJ12 MCM6264CJ15 MCM6264CJ20 6264CJ25 6264CJ35 6264CP12 6264CP15 6264CP20 PDF

    AST500

    Abstract: No abstract text available
    Text: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA MCM6729A 256K x 4 Bit Fast Static Random Access Memory The MCM6729A is a 1.048,576 bit static random access memory organized as 262,144 words of 4 bits. This device is fabricated using high performance sili­ con—gate BiCMOS technology. Static design eliminates the need for external


    OCR Scan     		MCM6729A MCM6729AW CM6729AW 6729AW J10R2 J12R2 AST500 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256K x 4 Bit Separate I/O Synchronous Fast Static RAM The M C M 67 Q 8 0 4 is a 1,048,576 bit static random a ccess memory, organized as 2 6 2 ,14 4 x 4 bits. T h is device is fab rica ted using M otorola’s h ig h -p erform a n ce


    OCR Scan     		DaQ804 MOM67Q804 MCM67Q J10R2 J12R2 MCM67Q804 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6727A Product Preview 1M x 1 Bit Fast Static Random Access Memory WJ PACKAGE 400 MIL SOJ CASE 810 The M C M 6727A is a 1,048,576 bit static random a ccess m em ory organized as 1,048,576 x 1 bits. This device is fabricated using high perform ance silicon-gate


    OCR Scan     		MCM6727A 6727AW J10R2 J12R2 CM6727AW PDF

    6206DJ20

    Abstract: No abstract text available
    Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MCM6206D 32K x 8 Bit Fast Static RAM The MCM6206D is fabricated using Motorola’s high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks or timing strobes, while CMOS circuitry reduces power consumption and provides for greater reliability.


    OCR Scan     		MCM6206D 6206D 6206DP12 6206DP15 6206DP20 6206DP25 6206DJ12 6206DJ15 6206DJ20 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67F804 Product Preview 256K x 4 Bit Synchronous Static RAM with Latched Outputs The M C M 67F804 is a 1,048,576 bit static random a ccess m em ory organized as 262,144 x 4 bits. This device is fab rica ted using M otorola's high-perform ance


    OCR Scan     		MCM67F804 67F804 i4-209 MCM67F804 67F8Q4 67F804W J15R2 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MCM6265C 8K x 9 Bit Fast Static RAM The M C M 6265C is fabricated using M otorola's high-perform ance silicon-gate C M OS technology. Static design elim inates the need for external clocks or tim ing strobes, w hile C M O S circuitry reduces pow er consum ption and provides for greater reliability.


    OCR Scan     		MCM6265C 6265C 6265C 6265CP12 6265CP15 6265CP20 6265CP25 6265CP35 6265CJ12 6265CJ15 PDF