MG800FXF1JMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
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TK065U65Z
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Toshiba Electronic Devices & Storage Corporation
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MOSFET, N-ch, 650 V, 38 A, 0.065 Ohm@10V, TOLL |
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TK5R1P08QM
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Toshiba Electronic Devices & Storage Corporation
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MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK |
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TK190E65Z
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 650 V, 0.19 Ω@10V, TO-220, DTMOSⅥ |
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TK090U65Z
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Toshiba Electronic Devices & Storage Corporation
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MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL |
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