diode marking j35
Abstract: "N-Channel JFET" n-channel JFET sot23 K1109 J3E diode condenser microphone electret condenser microphone datasheets J37 transistor N-channel JFET J36 SOT23
Text: UNISONIC TECHNOLOGIES CO., LTD K1109 N-CHANNEL JFET N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE DESCRIPTION The UTC K1109 is N-channel JFET for electrets condenser microphone. FEATURES * High gm implies low transfer loss * Built-in gate-source diode and resistor implies fast power on
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K1109
K1109
K1109L
K1109G
K1109-x-AC3-R
K1109-x-AE3-R
K1109L-x-AC3-R
K1109L-x-AE3-R
K1109G-x-AC3-R
K1109G-x-AE3-R
diode marking j35
"N-Channel JFET"
n-channel JFET sot23
J3E diode
condenser microphone
electret condenser microphone datasheets
J37 transistor
N-channel JFET
J36 SOT23
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J3E diode
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD K1109 N-CHANNEL JFET N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE DESCRIPTION The UTC K1109 is N-channel JFET for electret condenser microphone. FEATURES * High gm implies low transfer loss * Built-in gate-source diode and resistor implies fast power on
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K1109
K1109
K1109L
K1109G
K1109-x-AC3-R
K1109-x-AE3-R
K1109L-x-AC3-R
K1109L-x-AE3-R
K1109G-x-AC3-R
K1109G-x-AE3-R
J3E diode
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GA352QR7GF102K
Abstract: ERJ8BQFR25V schottky diode N9 SOD-123 smb schottky diode s4 D2212A r56 magnetic usb readbyte writebyte HFJ24-MAX2E RJ-45 poe ethernet OPTICAL COUPLER
Text: 19-4026; Rev 0; 2/08 MAX5952A Evaluation Kit/Evaluation System Order the MAX5952AEVCMAXQU for a complete PCbased evaluation of the MAX5952A. Order the MAX5952AEVKIT if you already have a CMAXQUSB interface board or do not require PC-based evaluation of the MAX5952A.
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MAX5952A
MAX5952AEVCMAXQU
MAX5952A.
MAX5952AEVKIT
Pre-802
750mA/Port)
RJ-45
10/100BASE-TX
GA352QR7GF102K
ERJ8BQFR25V
schottky diode N9 SOD-123
smb schottky diode s4
D2212A
r56 magnetic
usb readbyte writebyte
HFJ24-MAX2E
RJ-45 poe ethernet
OPTICAL COUPLER
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GA352QR7GF102K
Abstract: NEC B1100 MAX5020 poe splitter circuit HFJ24-MAX2E INTEL 40 pin ICs RJ-45 poe ethernet schottky diode N9 SOD-123 smb schottky diode s4
Text: 19-4026; Rev 0; 2/08 MAX5952A Evaluation Kit/Evaluation System Order the MAX5952AEVCMAXQU for a complete PCbased evaluation of the MAX5952A. Order the MAX5952AEVKIT if you already have a CMAXQUSB interface board or do not require PC-based evaluation of the MAX5952A.
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MAX5952A
MAX5952AEVCMAXQU
MAX5952A.
MAX5952AEVKIT
Pre-802
750mA/Port)
RJ-45
10/100BASE-TX
GA352QR7GF102K
NEC B1100
MAX5020
poe splitter circuit
HFJ24-MAX2E
INTEL 40 pin ICs
RJ-45 poe ethernet
schottky diode N9 SOD-123
smb schottky diode s4
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T2D DIODE 94
Abstract: QE R518 T2D DIODE 46 EPC1PC8 QE r517 crystal j3f SG-8200 resistor r336 r331 r322 r330 r1 QE r525 qe r524
Text: LXD9781 PQFP Demo Board with FPGAs for RMII-to-MII Conversion Developer Manual January 2001 As of January 15, 2001, this document replaces the Level One document Order Number: 249043-001 LXD9781 PQFP Demo Board with FPGAs for RMII-to-MII Conversion User Guide.
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LXD9781
for9781
LXT9781
20-Pin
144-Pin
16-Pin
SN74LVC244ADW
T2D DIODE 94
QE R518
T2D DIODE 46
EPC1PC8
QE r517
crystal j3f
SG-8200
resistor r336 r331 r322 r330 r1
QE r525
qe r524
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74HC595 SMD
Abstract: smd transistor w18 T2D DIODE 46 8 pin SMD ic 2068 smd 1a2 QE r525 QE R519 T04 p6 smd GMC31X7R104K50NT u1g SMD
Text: LXD9781 BGA Demo Board with FPGAs for RMII-to-MII Conversion Developer Manual January 2001 As of January 15, 2001, this document replaces the Level One document Order Number: 249044-001 LXD9781 BGA Demo Board with FPGAs for RMII-to-MII Conversion User Guide.
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LXD9781
12065C104KATMA
SMS-120-01-G-D
R58-60,
1/10W
R230-237
20-SOP
SN74LVTH244ADWR
74HC595 SMD
smd transistor w18
T2D DIODE 46
8 pin SMD ic 2068
smd 1a2
QE r525
QE R519
T04 p6 smd
GMC31X7R104K50NT
u1g SMD
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F760
Abstract: GGT DIODE ERB32 F553 H150 T151 T810 T930 J3E diode
Text: ERB32 i .2A • * » ■ * » : Outline Drawings FAST RECOVERY DIODE : Features Super high speed switching H S tF I Marking • te V F A 5- 3 - V ; fi Low V F Color code : Orange • «fifS-ft Abridged type name ŒŒ? « Voltoge class D yh fc Lot No. High reliability
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ERB32
TKESTS30
aTi30S3
I95t/R89)
F760
GGT DIODE
F553
H150
T151
T810
T930
J3E diode
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Si515
Abstract: No abstract text available
Text: d r i& t n ik l G B • * a x T ^ i ^ i L — " j T 's ' f W - f N '> J U n M y ’J - X j 2 M B 1 1 N C - 1 2 IJ - X ' j 1200V/100A/ 2 ffliifi : Features • y f H i g h Speed Switching • J±8*Rj Voltage Drive Low Inductance Module Structure ■E3& : Applications
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200V/100A/
J94/J94)
Si515
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EVK31-050
Abstract: M190G J3E diode 30H3 M201 P460 T151 MTM M201
Text: EVK31-O5O 50a • S ± / < 7 - je ì >j . - ; u W M ’t H / < 7 — : Outline Drawings POWER TRANSISTOR MODULE : Features • 7 U —jJW U ' s W 4 • hFE^Siv,' • IfeÎ&Tfé — K rtS I Including Free Wheeling Diode High DC Current Gain Insulated Type
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EVK31-O5O
E82988
l95t/R89
EVK31-050
M190G
J3E diode
30H3
M201
P460
T151
MTM M201
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6di75a-050
Abstract: cl25C J3E diode
Text: 6DI75A-050 75 a S ± / < 9 — I'Outline Drawings P O W ER TRA N SISTO R MODULE 94 L_ , 115 ,(10) I 0), >15 , IS i 17 4.5 14 4S 14 Í.5 14 45 IT : Features • ~7 l) — « - p . *J > $ $ 4 • h F E *''ft^ v KrtSfe Including Free W heeling Diode High DC Current Gain
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6DI75A-050
19g24
l95t/R89
Shl50
cl25C
J3E diode
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6DI75A-050
Abstract: transistor kt transistor 8771 T460 T760 T810 T930 6DI75A050 jis s25c
Text: 6DI75A-050 75 a S ± / < 9 — I'Outline Drawings P O W ER TRA N SISTO R MODULE 94 L_ , 115 ,(10) I 0), >15 , IS i 17 4.5 14 4S 14 Í.5 14 45 IT : Features • ~7 l) — « - p . *J > $ $ 4 • hFE*''ft^v KrtSfe Including Free Wheeling Diode High DC Current Gain
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6DI75A-050
E82988
l95t/R89
transistor kt
transistor 8771
T460
T760
T810
T930
6DI75A050
jis s25c
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J3E diode
Abstract: No abstract text available
Text: Tem ic SÌ8956AZ/883 Siliconix Quad N-Channel Enhancement-Mode MOSFET Product Summary V 'd s V I d « • » S (o n ) ( ß ) (A ) o .l @ V G S = 1 0 V 5 0 .2 @ V G S = 4 .5 V 1 20 L C C -20 Si S i D 2 D 2 G ì D4 D4 G3 S3 S3 Tbp View Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)
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8956AZ/883
P-36673--
P-36673--Rev.
2S4735
J3E diode
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LE50 equivalent transistor
Abstract: J3E diode
Text: EVK31-O5O 50a • S ± / < 7 - je ì >j . - ; u W M ’t H : Outline Drawings / < 7 — POWER TRANSISTOR MODULE : Features • 7 U —jJW U ' s W • hFE^Siv,' • IfeÎ&Tfé 4 — K rtS I Including Free Wheeling Diode High DC Current Gain Insulated Type
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EVK31-O5O
E82988
U388-7680
I95t/R
LE50 equivalent transistor
J3E diode
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m210 g
Abstract: J3E diode
Text: 2DI100Z-100 iooa : Outline Drawings POWER TRAN SISTO R MODULE ÌR 25 F e a tu re s • S W JÏ High Voltage • 7 'J — jfr-f y — KrtflK • A S O A 'J ÏIl' • ÿfeiiïïi Including Free W heeling Diode Excellent Safe Operating Area Insulated Type • Æ liÉ ^ A p p lic a t io n s
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2DI100Z-100
E82988
11S19^
I95t/R89)
m210 g
J3E diode
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MEU11
Abstract: mq-k1
Text: 2 D E J O O A -O s < r 7 - Y :7 > i ï A 9 5 O 200a / * 7 — ; u : Outline Drawings :£ i > ^ - ) l ' POWER TRANSISTOR MODULE • 4 $ £ : Features • ^Œ3lE High Current • h« High DC Current Gain • fÊfliïfé Insulated Type IA M PN o . A p p lic a tio n s
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E82988
MEU11
mq-k1
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L3105
Abstract: JC EB mot b195 transistor
Text: E V L31-055 iooa / < 7 - hv POWER TRANSISTOR MODULE Features • ' • 7 U —f r 'f U • h F E ^ 'ift t' • = t— K r tj In c lu d in g Free W h e e lin g D iode H ig h DC C u rre n t Gain Insulated Type ’ A p p lic a tio n s P ow er S w itc h in g
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L31-055(
L3105
JC EB mot
b195 transistor
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2SJ154
Abstract: TC-7702 nec 2sJ154 pt 4115 Diode CVJ
Text: M O S Field E ffe c t P o w e r T ra n s is to r 2SJ154 MOS F E T i i f 2SJ154Ü , P f - ^ T 'A 'I Ë P '^ - M O S <r> a \ j j c i è & k æ x j f l F E T T% 5 V B i g J U C 7 f > ^ ^ x ¥ 4 Ï : mm t - t . 4.7 MAX. :* V ÎK Æ V W # / ' f tW K , S < ,
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2SJ154
2SJ154Ã
2SJ154
TC-7702
nec 2sJ154
pt 4115
Diode CVJ
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2SK680
Abstract: 2sk68 TRANSISTOR DG S-10 tc6106
Text: M O S Field Effect Power Transistor 2SK680Ü, N - f ?Wb|ÊÉ ^“'7 - M 0 S F E T T ', J : £ i f i f ê l i I ! j * r 5 T t b £ : x -i v - f > i , ^ 7 i t i t i 5 V t l# JC « ( ¥ f i 4 .5 ± 0 .1 X T 't„ f f if t - C V 'S f c t f ) , T : m m ) ?
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2SK680
2SK680Ã
Cycled50
0-47L
2SK680
2sk68
TRANSISTOR DG S-10
tc6106
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x27c
Abstract: No abstract text available
Text: B k J B := . • E S ■ W f c r s i Wè ê ë ê MX27C1 100/27C1 024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • • Operating current: 40mA 64K x 16 organization MX27C1024, JEDEC pin out • Standby current: 100uA • 128K x 8 or 64K x 16 organization(M X27C1100,
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MX27C1
100/27C1
8/64K
MX27C1024,
100uA
40pin
X27C1100,
X27C1024)
X27C11nnnnnnnnnnnnnnnnn
PM0156
x27c
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S4846
Abstract: PT15D r6c5 pti8 PT10c
Text: Datasheet August 1996 microelectronics group Lucent Technologies Bell Labs Innovations ORCA OR2CxxA 5.0 V and OR2TxxA (3.3 V) Series Field-Programmable Gate Arrays Features • Flip-flop/latch options to allow programmable prior ity of synchronous set/reset vs. clock enable
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16-bit
32-bit
DS96-140FPGA
DS96-025FPGA)
S4846
PT15D
r6c5
pti8
PT10c
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TMs 1122 NL
Abstract: TMS1000 TMS 1070 NL tms1100 TMS 1100 tms 1000 TMS1070 TMS1300 Tms 1300 TMS 1070 HL
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED S em iconductor Group Programmer’s Reference Manual TMS 1000 Series MOS/LSI One-Chip Microcomputers T e x a s In s t r u m e n t s IN C O R P O R A T ED Inform ation contained in this publication is believed to be
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resu00
TMs 1122 NL
TMS1000
TMS 1070 NL
tms1100
TMS 1100
tms 1000
TMS1070
TMS1300
Tms 1300
TMS 1070 HL
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