J6 MARKING Search Results

Contextual Info: LDVER RDW ELECTRICAL SPECIFICATIONS* l.D TURNS RATIO P 1-P E-P3 i (J1 -J2 ) CP 4-P 5 -P 6) ; (J3 -J6 > 2.0 INDUCTANCE <P6-P4> (P3-PL) 3.0 LEAKAGE INDUCTANCE P 6 -P 4 (WITH J6 AND J3 SHDRT) P3-P1 (WITH J2 AND JL SHDRT) 4.0 INTERW INDING CAPACITANCE CP6.P5.P4) TD (J6,J3)

35NAG

Abstract: td 6d01
Contextual Info: LDWER ROW <D <£> <£> £> ELECTRICAL SPECIFICATIONS: 1.Û TURNS RATIO (PL-P2-P3 i CJ1-J2) (P 4-P 5-P6 ) i CJ3-J6) 2.0 INDUCTANCE (P6-P4) (P3-P1) 3.0 LEAKAGE INDUCTANCE P6-P4 <V1TH J6 AND J3 SHDRT) P3-P1 (WITH JE ANI J1 SHDRT) 4.Û INTERWINDING CAPACITANCE (P6,P5,P4) TD (J6,J3>

marking J6

Abstract: KRA739U
Contextual Info: SEMICONDUCTOR KRA739U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking J6 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark J6 KRA739U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRA739E

Contextual Info: SEMICONDUCTOR KRA739E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking J6 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark J6 KRA739E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

Contextual Info: 1CT : 1CT J1 TD+ J2 TD- J3 RD+ J4 J5 J6 RD- J7 J8 lOOOpF, 2 K V ELECTRICAL SPECIFICATIONS: 1 .0 TURNS RATIO: P 3 -P 7 -P 6 : (J3-J6 ) (P 1 -P 4 -P 5 -P 2 ) : (J1-J2 ) 1 CT 1 CT 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: (P 3 -P 6 ) (J1-J2 ) 400uH 400uH MIN.

Contextual Info: L D V E R RDW ELECTRICAL l.D SPECIFICATIONS* TURNS RATIO P 1 -P E -P 3 i (J 1 -J 2 ) C P 4 -P 5 -P 6 ) ; (J3 -J6 > 2.0 INDUCTANCE <P 6 -P 4 > (P3-PL) 3.0 LEAKAGE INDUCTANCE P6-P 4 P3-P1 4.0 INTERW INDING CAPACITAN CE (W ITH J6 (W ITH 5,0 DC RESISTANCE J2

ni usb 6501

Abstract: NI 6501 RJ45 USB RJ45 usb connector
Contextual Info: 1CT : 1CT J1 J2 J3 J4 J5 J6 J7 J8 lO O O p F , TD + TDRD+ RD- 2 K V N DT E S 1,0 P I N S V I T H D U T E L E C T R I C A L CONNECTION ARE EMITTED, ELECTRICAL SPECIFICATIONS: 1.0 TU RNS RATIO: P 7 - P 6 - P 8 (P 1 -P 3 -P 2 ) : (J3 -J6 ) : (J1 -J2 ) 2.0

Contextual Info: SOT-23 Plastic-Encapsulate Transistors S9014LT1 NPN TRANSISTOR FEATURES • High total power dissipation.(pc=0.2w) · Complementary to S9015LT1 MARKING: J6 MAXIMUM RATINGS* TA=25? unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage

S9014

Abstract: transistor SOT23 J6
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

transistor SOT23 J6

Abstract: S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

transistor S9014

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

transistor SOT23 J6

Abstract: transistor S9014 S9014 SOT-23 j6 sot23 J6 transistor j6 transistor sot-23 SOT-23 j6 transistor npn s9014 S9014 J6 J6 SOT 23
Contextual Info: S9014 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to S9015 MARKING: J6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

Contextual Info: DMA56604 Silicon PNP epitaxial planar type Unit: mm For digital circuits • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: J6  Basic Part Number

k632

Abstract: k440 8 Augat K1255 KT 816 kn5700b1 PK110 KN-500
Contextual Info: K Series - Page J5 KCB Series - Page J6 KE Series - Page J7 KLNS Series - Page J9 KN Series - Page J9 PK Series - Page J14 J PKD Series - Page J15 Need more technical information? Consult your local Augat sales office listed on the back cover PKR Series - Page J19

Component Marking

Abstract: EIA J code marking marking code capacitors EIA "J" code marking eia marking code tantalum marking code w5 marking marking j106 J106 MARKING E6
Contextual Info: Tantalum Chip Capacitors NTC-T Series CAPACITANCE CODES VOLTAGE CODES A e G J A C D E V H COMPONENT MARKING J Case Size J A5 E5 J5 N5 S5 W5 A6 E6 J6 N6 S6 W6 A7 J7 N7 S7 Code 2.5 4 6.3 10 16 20 25 35 50 Polarity Marking anode J 104 154 224 334 474 684 105

BA142

Abstract: EIA J code marking A7 marking tantalum marking code marking code E6 e5 marking marking code 336 MARKING CODE N k 10 marking code
Contextual Info: Tantalum Chip Capacitors NTC-T Series CAPACITANCE CODES VOLTAGE CODES A e G J A C D E V H COMPONENT MARKING J Case Size J A5 E5 J5 N5 S5 W5 A6 E6 J6 N6 S6 W6 A7 J7 N7 S7 Code 2.5 4 6.3 10 16 20 25 35 50 Polarity Marking anode J 104 154 224 334 474 684 105

Contextual Info: 1CT : 1CT lOOOpF, 2 K V NOTES ELECTRICAL SPECIFICATIONS: 1 .0 TURNS RATIO: 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING 5 .0 DC 1,0 PINS VITHDUT ELECTRICAL CONNECTION ARE EMITTED, P 4 -P 5 -P 6 (P 3 -P 2 -P 1 ) : (J3-J6 ) : (J1-J2 ) 1 CT :

marking 2x

Abstract: RJ45 USB RJ45 usb connector
Contextual Info: ELECTRICAL SPECIFICATIONS: 1.0 TU RNS RATIO: TU RNS RATIO P 6 -P 8 -P 3 ( P 2 - P 7 - P 1 ) : (J2 -J1 ) : (J6 -J3 ) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: 5.0 DC RESIST A N CE ( J 6 —J3) = (J 2 — J 1 )

transistor marking p3

Abstract: LU1S041 LU1S041B
Contextual Info: 10/100 BASE-TX “LAN-MATE” P/N: LU1S041B DATA SHEET SMALL SIZE A. GENERAL SPECIFICATONS 1. COMPLIES WITH REQUIREMEND OF IEEE802.3u SRANDARDS. 2. RJ 45 CONNECTOR WITH 10/100 BASE-TX MAGNETIC. B.ELECTRICAL SPECIFICATIONS: 25°C 1. TURN RATIOS: (P6-P3): (J6-J3) =1CT: 1CT & (P2-P1):(J2-J1)=1CT: 1CT

Contextual Info: 10/100 BASE-TX “LAN-MATE” P/N: LU1S041A DATA SHEET SMALL SIZE A. GENERAL SPECIFICATONS 1. COMPLIES WITH REQUIREMEND OF IEEE802.3u SRANDARDS. 2. RJ 45 CONNECTOR WITH 10/100 BASE-TX MAGNETIC. B.ELECTRICAL SPECIFICATIONS: 25°C 1. TURN RATIOS: (P6-P4): (J6-J3) =1CT: 1CT & (P3-P1):(J2-J1)=1CT: 1CT

Contextual Info: 1.41 CT lO OOpF, 2 KV ELECTRICAL SPECIFICATIONS: NOTES: 1.0 TU RNS RATIO: P 4 - P 5 - P 6 (P 1 -P 2 -P 3 ) : (J3 -J6 ) : (J1 -J2 ) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: ( J 6 - J 3 ) = (J 2 - J 1 ) (P 6 -P 4 )

70025

Abstract: wy 413 USB Connector pcb layout RJ45 USB 12 pin RJ45 LED usb to rj45 rj45 to usb
Contextual Info: 1CT ! 1CT J1 TD + J2 TD- J3 RD+ J4 J5 J6 RD- J7 J8 ^7 7 lOOOpF, 2 K V SHIELD ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO : P 3 - P 7 - P 6 : ( J 3 - J 6 ) (P 1 -P 4 -P 5 -P 2 ) : (J 1 -J 2 ) 1CT : 1CT ± 3 % 1CT : 1CT ± 3 % 2 .0 INDUCTANCE : 400uH 400uH

70031

Contextual Info: 1CT ! 1CT J1 TD + J2 TD- J3 RD+ J4 J5 J6 RD- J7 J8 lOOOpF, 2 K V SHIELD ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO : P 3 - P 7 - P 6 : ( J 3 - J 6 ) (P 1 -P 4 -P 5 -P 2 ) : (J 1 -J 2 ) 1CT : 1CT ± 3 % 1CT : 1CT ± 3 % 2 .0 INDUCTANCE : 350uH 350uH MIN.