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    J681 TRANSISTOR Search Results

    J681 TRANSISTOR Result Highlights (5)

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    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

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    transistor J681

    Abstract: J681 j681 transistor 2sj681
    Contextual Info: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ５．２±０．２ z 4-V gate drive １．６ z Low drain−source ON resistance: RDS (ON) = 0.12 Ω (typ.)


    Original     		2SJ681 transistor J681 J681 j681 transistor 2sj681 PDF

    j681 transistor

    Contextual Info: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ５．２±０．２ z 4-V gate drive z Low drain−source ON resistance: RDS (ON) = 0.12 Ω (typ.)


    Original     		2SJ681 j681 transistor PDF

    transistor J681

    Abstract: 2SJ681 J681 j681 transistor tr j681
    Contextual Info: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 5.2 ± 0.2 z 4-V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.) z High forward transfer admittance: |Yfs| = 5.0 S (typ.)


    Original     		2SJ681 transistor J681 2SJ681 J681 j681 transistor tr j681 PDF

    J681

    Abstract: transistor J681 j681 transistor 2SJ681
    Contextual Info: 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)


    Original     		2SJ681 J681 transistor J681 j681 transistor 2SJ681 PDF

    transistor J681

    Abstract: 2sj681 J681 j681 transistor
    Contextual Info: 2SJ681 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U−MOSIII 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)


    Original     		2SJ681 transistor J681 2sj681 J681 j681 transistor PDF