JA 101Q Search Results

Contextual Info: ü ja lile o . GT-96010 Remote Access Coprocessor Preliminary Revision 1.0 8/12/97 Please contact Galileo Technology for possi b e updates before finalizing a design. FEATURES * Integrated serial communications controller and system core logic device - Direct interface to i960 Jx family of CPUs

JA101P

Abstract: ja 101q
Contextual Info: DISCRETE SEMICONDUCTORS JA101 PNP general purpose transistor Product specification Supersedes data of 1997 Mar 10 File under Discrete Semiconductors, SC10 Philips Sem iconductors 1998 Aug 04 PHILIPS Philips Semiconductors Product specification PNP general purpose transistor

Contextual Info: //A110QB Voltage Follower F A IR C H IL D A S chlum berger Com pany MIL-STD-883 July 1986 — Rev 15 Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 8-Lead Can Top View The juAHOQB is a monolithic operational am plifier internal­

344c amplifier

Abstract: 7611M LA 7612 AM-7611C ADC-7109 AM-7611M AM-7615M ESE 1012 la 7613 1ma5
Contextual Info: □Mn DtMññH^DEL AM -761X Series Low Power CMOS O perational A m plifiers FEATURES • Wide Operating Voltage Range — ± 0 .5 V to ± 8 V • Program mable Power Consum ption — as low as 10^W • High Input Im pedance — 10120 • Low Input Bias — 50 pA max.

Contextual Info: IRLW/I530A Advanced Power MOSFET FEATURES B V DSS — 1 0 0 V ♦ Avalanche Rugged Technology ^DS on - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .1 2 Q 14 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K ♦ 175°C Operating Temperature

RRMH

Abstract: RRME selenium rectifier RRM27 asea RRME RRMH ASEA RRM17 "selenium rectifier" 8 pin relay device 220 volt 4 uf 400 volt ac capacitor
Contextual Info: Catalogue RK 78-1 E E d itio n 2 F e b ru a ry 1973 F ils R. p a rt 2 Plug-in components Capacitor, resistor and diode devices V e rs io n s a n d m o u n tin g C o n te nts In th e A S E A pJog-in relay -system, d iffe re n t If a p o sitio n id e n tific a tio n p la te is re q u i­

23c1000

Abstract: 0403A1 MX23C1000 23C100 MX23C1000MC12
Contextual Info: MX23C1OCJO/IVIX23C1 CMO 1 M a r n i 28K x 81 CMOS MASK ROM FEATURES • • • • • Operating current: 40mA Standby current: 10OuA Package type: - 28 pin plastic DIP/SOP - 32 pin plastic DIP/SOP/PLCC/TSOP 131,072 x 8 organization Single +5V power supply

IT8771

Abstract: 7218A 7218C M7218A
Contextual Info: y k i y j x i y k i 8 D ig it LED D isplay D river General Description The Maxim ICM7218 display driver interfaces m icro­ processors to an 8 digit, 7 segment, numeric LED display. Included on chip are two types of 7 segment

UA317

Abstract: Fairchild dtl catalog free transistor equivalent book 2sc lm741 MA339PC MA725HM MA7805KM UA759 gi 9640 diod MA4136PC
Contextual Info: $9.9! •— r c m m pq, F A IR C H IL D A S chlum berger C om pany Linear Data Book Linear Division Introduction The Linear Data Book includes the standard linear product line plus our new W inchester Disk Drive circuits and CLASIC standard cells. For ease o f reference linear

Contextual Info: W29C101 Pinbond Electronics Corp. 64K X 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C101 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is

TL4558

Abstract: 500MSPS CXA1276K
Contextual Info: SONY CXA1276K 8-bit 500 MSPS Flash A/D Converter For the availability of this product, please contact the sales office, Description The CXA1276K is an 8-bit ultrahigh-speed flash A/D converter IC capable of digitizing analog signals at a maximum rate of 500 MSPS. The digital I/O

MOC 2021

Abstract: TL4558 CXB1109 500MSPS CXA1276K
Contextual Info: ,O N Y | _ C X A 1 2 7 6 K 8-bit 500 MSPS Flash A/D Converter Description The CXA1276K is an 8-bit ultrahigh-speed flash A/D converter !C capable of digitizing analog signals at a maximum rate of 500 MSPS. The digital I/O level of this A/D converter is compatible with the ECL

Contextual Info: CY14V101Q3 1 Mbit 128 K x 8 Serial SPI nvSRAM Features • 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 128 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by user using

Contextual Info: CY14V101Q3 1 Mbit 128 K x 8 Serial SPI nvSRAM Features • 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 128 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by user using

OF SPI protocol

Abstract: CY14V101Q3
Contextual Info: CY14V101Q3 1 Mbit 128 K x 8 Serial SPI nvSRAM Features • 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 128 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by user using

Contextual Info: CY14B101Q1 CY14B101Q2 CY14B101Q3 1 Mbit 128 K x 8 Serial SPI nvSRAM Features • 1 Mbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 128 K x 8 ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by user using

Contextual Info: CY14B101Q1 CY14B101Q2 CY14B101Q3 1-Mbit 128 K x 8 Serial SPI nvSRAM 1-Mbit (128 K × 8) Serial SPI nvSRAM Features • 8-pin dual flat no-lead (DFN) package and 16-pin small outline integrated circuit (SOIC) package ❐ Restriction of hazardous substances (RoHS) compliant

Contextual Info: CY14B101Q1 CY14B101Q2 CY14B101Q3 1 Mbit 128 K x 8 Serial SPI nvSRAM Features • ❐ 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 128 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by user using

Contextual Info: CY14B101Q1 CY14B101Q2 CY14B101Q3 1-Mbit 128 K x 8 Serial SPI nvSRAM 1-Mbit (128 K × 8) Serial SPI nvSRAM Features • ❐ 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 128 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated

Contextual Info: CY14B101Q1 CY14B101Q2 CY14B101Q3 1-Mbit 128 K x 8 Serial SPI nvSRAM 1-Mbit (128 K × 8) Serial SPI nvSRAM Features 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 128 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated

Contextual Info: CY14B101Q1 CY14B101Q2 CY14B101Q3 1-Mbit 128 K x 8 Serial SPI nvSRAM 1-Mbit (128 K × 8) Serial SPI nvSRAM Features • ❐ 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 128 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated

TFA 1001

Abstract: CY14X101Q2A CY14C101Q
Contextual Info: CY14C101Q CY14B101Q CY14E101Q 1-Mbit 128 K x 8 Serial (SPI) nvSRAM 1-Mbit (128 K × 8) Serial (SPI) nvSRAM Features • ■ 1-Mbit nonvolatile static random access memory (nvSRAM) internally organized as 128 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated

Contextual Info: CY14C101Q CY14B101Q CY14E101Q 1-Mbit 128 K x 8 Serial (SPI) nvSRAM 1-Mbit (128 K × 8) Serial (SPI) nvSRAM Features • 1-Mbit nonvolatile static random access memory (nvSRAM) internally organized as 128 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated

Contextual Info: CY14C101Q CY14B101Q CY14E101Q 1-Mbit 128 K x 8 Serial (SPI) nvSRAM 1-Mbit (128 K × 8) Serial (SPI) nvSRAM • ■ 1-Mbit nonvolatile static random access memory (nvSRAM) internally organized as 128 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated