Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues • We declare that the material of product 3 compliance with RoHS requirements. 1 Ordering Information 2 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel
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LBAV74LT1G
3000/Tape
LBAV74LT3G
10000/Tape
236AB)
OT-23
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marking MA
Abstract: KTK920T
Text: SEMICONDUCTOR KTK920T MARKING SPECIFICATION TSQ PACKAGE 1. Marking method Laser Marking MA 1 No. JA 2. Marking 2 Item Marking Description Device Mark MA KTK920T * Lot No. JA 2006. 1st Week [ 0 : 1st Chracter, 1:2nd Character ] Note * Lot No. marking method
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KTK920T
marking MA
KTK920T
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues Pb-Free Package is Available. Ordering Information 3 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel 1 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB
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LBAV74LT1G
3000/Tape
LBAV74LT3G
10000/Tape
236AB)
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues • We declare that the material of product 3 compliance with RoHS requirements. 1 Ordering Information 2 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel
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LBAV74LT1G
3000/Tape
LBAV74LT3G
10000/Tape
OT-23
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KDS135S
Abstract: JA MARKING SOT23 marking J1
Text: SEMICONDUCTOR KDS135S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 JA 1 2 Item Marking Description Device Mark JA KDS135S - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KDS135S
OT-23
KDS135S
JA MARKING SOT23
marking J1
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marking E5
Abstract: KDS166T S5 MARKING marking S5 E5 MARKING
Text: SEMICONDUCTOR KDS166T MARKING SPECIFICATION TSV PACKAGE 1. Marking method Laser Marking S5 1 No. JA 2. Marking 2 Item Marking Description Device Mark S5 KDS166T * Lot No. JA 2005. 1st Week [ 0 : 1st Chracter, 1:2nd Character ] Note * Lot No. marking method
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KDS166T
marking E5
KDS166T
S5 MARKING
marking S5
E5 MARKING
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mark Bb
Abstract: e5 marking
Text: SEMICONDUCTOR USFB13L MARKING SPECIFICATION USF PACKAGE 1. Marking method Laser Marking 2. Marking 2 BB JA 1 CATHODE MARK No. Item Marking Description Device Mark BB USFB13L * Lot No. JA Manufacturing date Year/Week Note) * Lot No. marking method Year Periode (Year)
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USFB13L
mark Bb
e5 marking
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS126T MARKING SPECIFICATION TS6 PACKAGE 1. Marking method Laser Marking UB 1 No. JA 2. Marking 2 Item Marking Description Device Mark UB KDS126T * Lot No. JA 2005. 1st Week [ 0 : 1st Chracter, 1:2nd Character ] Note * Lot No. marking method
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KDS126T
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marking JA
Abstract: KDS135 Semiconductor marking JA
Text: SEMICONDUCTOR KDS135 MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking JA 0 1 2 1 No. Item Marking Description Device Mark JA KDS135 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KDS135
marking JA
KDS135
Semiconductor marking JA
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KMA6D0P20X
Abstract: M01 marking
Text: SEMICONDUCTOR KMA6D0P20X MARKING SPECIFICATION TSOP-6 PACKAGE 1. Marking method Laser Marking. 2. Marking M01 1 JA 2 3 No. Item Marking Description Device Mark M01 KMA6D0P20X * Lot No. JA Manufacturing date Year/Week Pin No. Dot Pin 1 Note) * Lot No. marking method
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KMA6D0P20X
KMA6D0P20X
M01 marking
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KRA721U
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA721U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking JA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JA KRA721U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRA721U
KRA721U
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KRA721E
Abstract: marking JA
Text: SEMICONDUCTOR KRA721E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking JA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JA KRA721E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRA721E
KRA721E
marking JA
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214012
Abstract: 2651 300V awg26 105c 020C E83005 IEC60512 IEC60664 AWM 2651 839021
Text: 1.27 mm SRC 単列コネクター ミニブリッジ ケーブルシステム www.erni.com Catalog JA 074560 01/10 Edition 5 www.erni.com 2 Catalog JA 074560 Catalog 10/06 JA 074560 01/10 Edition 1 Edition www.erni.com 5 1.27 mm SRC 単列コネクター - ミニブリッジ™ ケーブルシステム
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BAL99
Abstract: No abstract text available
Text: Zowie Technology Corporation Switching Diode 3 ANODE BAL99 1 CATHODE 3 2 2 SOT-23 MAXIMUM RATINGS Symbol Value Unit Continuous Reverse Voltage VR 70 Vdc Peak Forward Current IF 100 mAdc Symbol Max. Unit PD 225 1.8 mW mW / oC R JA 556 PD 300 2.4 R JA TJ,TSTG
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BAL99
OT-23
BAL99
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Untitled
Abstract: No abstract text available
Text: UK Low Noise, Low Power, 32 Taps X9316 E2POT Nonvolatile Digital Potentiometer FEATURES DESCRIPTION • Low Micropower CMOS — Vcc = 3V to 5.5V — Active Current, 50|jA Increment Max — Standby Current, 400|jA (Store) Max • Low Noise • 31 Resistive Elements
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OCR Scan
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X9316
X9316
X9316W
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LQH3C470
Abstract: BD914 Sanyo OS-CON capacitors LT1316CMS8 LT1316CS8
Text: r r u u m TECHNOLOGY _ LT1316 Micropower DC/DC Converter with Programmable Peak Current Limit FCRTURCS D C S C R IP TIO n • Precise Control of Peak Switch Current ■ Quiescent Current: 33|jA in Active Mode 3|jA in Shutdown Mode ■ Low-Battery Detector Active in Shutdown
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OCR Scan
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LT1316
300mV
500mA
500mA
300mA
V/600mA
200mA
500mV
12joA
LQH3C470
BD914
Sanyo OS-CON capacitors
LT1316CMS8
LT1316CS8
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Untitled
Abstract: No abstract text available
Text: P o w er M an ag em en t Low Power, 5Y |HP Reset - Active LOW, Open-Drain Output Improved Dallas DS1233D replacement — Over 60% lower maximum supply current - 350m s Reset Period Low Supply Current — 20|jA maximum 5.5V — 15|jA maximum (3.6V) The IMP1233D supply voltage monitor is an improved, low-power
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DS1233D
IMP1233D
DS1233D.
supp70
1233D04
408-432-9100/www
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LTC1154
Abstract: No abstract text available
Text: 11 m i / r u ^Æ Êm F LTC1154 m TECHNOLOGY High-Side M icro po w e r MOSFET Driver F€ R TU R € S D € S C R IP T IO fl • Fully Enhances N-Channel Power MOSFETs ■ 8|jA Iq Standby Current ■ 85|jA Iq ON Current ■ No External Charge Pump Capacitors
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OCR Scan
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LTC1154
LTC1154
CA95035-7487
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Untitled
Abstract: No abstract text available
Text: MAXIMUM RATINGS Symbol Value Reverse Voltage Rating Vr 70 Vdc Forward C urrent if 200 m A dc *FM surqel 500 m Adc Symbol M ax Unit Pd 225 mW 1.8 m W *C Ro ja 556 ;c / w pd 300 mW 2.4 mW/°C Ro ja 417 °C'W TJ ' Tstq - 5 5 to +150 3C Peak Forw ard Surge C urrent
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OCR Scan
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MMBD6100LT1
OT-23
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtmm SG 30TC 12M Unit : mm Package : FTO-220G o -y H d ^ J 120V 30A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • o u t lin e Ir=40|jA Tj=175°C Full Molded Low Ir=40|jA Resistance for thermal run-away
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OCR Scan
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FTO-220G
J533-1)
SG30TC12M
50IIz
J533-1
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DIODE MARKING EJL
Abstract: DIODE EJL SG20TC15M SS81
Text: Schottky Barrier Diode Twin Diode • fl- tlH S G 20T C 15M OUTLINE Unit: mm Package : FTO-220G Weight L54g Typ 150V 20A 4.5 Feature • Tj=1751C • 1SIr=30|jA • U lc x u • • • • • Tj=175°C High lo Rating Full Molded Low Ir=30)jA Resistance for thermal run-away
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SG20TC15M
30jjA
FTO-220G
i50HzT
CJ533-1)
DIODE MARKING EJL
DIODE EJL
SG20TC15M
SS81
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Untitled
Abstract: No abstract text available
Text: LinfiAR. TECHNOLOGY f ö lL i M Q J M i l Final Electrical Specifications LTC1665 Micropower Octal 8-Bit DAC Fe b ru a ry 1999 KRTURCS D C S C R IP TIO n • Tiny: 8 DACs in the Board Space of an SO-8 ■ Ultralow Power: 56|jA per DAC Plus 1|jA Sleep Mode for Extended Battery Life
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OCR Scan
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1000pF
10-Bit
LTC1660
LTC1454:
LTC1454L:
LTC1458:
LTC1458L:
10ppm/
1665i
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SG30TC
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FTO-220G SG30TC 15M Unit : mm Weight 1.54g Typ nvhfB-SKW 15 0 V 3 0 A .4.5 Feature >Tj=150°C • Tj=150°C • 1 High lo Rating >7HÆ -J b K » » Full Molded 1 Low Ir=40|jA Ir=40|jA ' Resistance for thermal run-away
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OCR Scan
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PDF
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SG30TC
FTO-220G
J533-1)
SG30TC15M
50IIz
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SG30TC15M
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode • fl-tlH O U T L IN E S G 30T C 1 5 M 150V 30A Feature • Tj=1751C • Tj=175°C • High lo Rating • Full Molded • 1SIr=40|jA • Low Ir=40|jA • U lc x u • Resistance for thermal run-away Main Use • X 'f'yf-y'fM M
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OCR Scan
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SG30TC15M
FTO-220G
waveti50Hz-t
CJ533-1
SG30TC15M
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