JANSF2N7270 Search Results

Contextual Info: PD - 90673B IRHM7450 JANSR2N7270 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7450 IRHM3450 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on)

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

JANSR2N7270

Abstract: IRHM8450 IRHM7450 JANSF2N7270
Contextual Info: PD - 90673B IRHM7450 JANSR2N7270 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7450 IRHM3450 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on)

Contextual Info: _ I n t e r n a t i o n a l R e c t if ie r Government and Space Products Part Number P bvdss Vohj) RDS(on) (Ohmi) 10« To*25* ID« Tc*100° (Amp*) (Amps) Total Dos* Rating Radi (Si) PD« To2P (Watts) Fax-onDrniand Number

JANSR2N7270U

Abstract: JANSF2N7270U
Contextual Info: PD - 90819B IRHN7450 JANSR2N7270U 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN7450 100K Rads (Si) IRHN3450 300K Rads (Si) IRHN4450

Contextual Info: Government and Space Products International IO R Rectifier • d Part Number Tc=2S°C RDS on b VD$S (A) (V) T f=100°C (A) Total Dose Rating Rads (Si) p @ Ic = 25°C (W) HEXFET ® Power MOSFETs Fax Case on Demand Outline Key Number R a d ia tio n H a rd e n e d

smd 233

Abstract: IRHN7450 IRHN8450 JANSR2N7270U
Contextual Info: PD - 90819B IRHN7450 JANSR2N7270U 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN7450 100K Rads (Si) IRHN3450 300K Rads (Si) IRHN4450

Contextual Info: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _