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    JANTXV 1N3595 EQUIVALENT Search Results

    JANTXV 1N3595 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FM42UG
    		Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80B Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FH40NG
    		Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/SDIP42-P-600-1.78 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FM42LUG
    		Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80B Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS28LFG
    		Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP176-P-2020-0.40D Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG
    		Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation

    JANTXV 1N3595 EQUIVALENT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    3595

    Abstract: 1N3595-1 SV359
    Contextual Info: 1N3595-1, 1N3595US-1 Standard VF CONTROLLED DIODE SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5086, REV. A.1 AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV*, SS* VF Controlled Diodes Qualified per MIL-PRF-19500/241


    Original     		1N3595-1, 1N3595US-1 MIL-PRF-19500/241 3595 1N3595-1 SV359 PDF

    1N3595-1US

    Abstract: JANTXV 1N3595 equivalent 1n3595-1 1N 457 equivalent 1N3595US JANTX 1N3595 jantx1n3595-1 1N3595-1 JANTX JANS1N3595US melf diode D-5D
    Contextual Info: 1N3595-1, 1N3595US-1 Standard VF CONTROLLED DIODE SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5086, REV. A AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV*, SS* Vf Controlled Diodes Qualified per MIL-PRF-19500/241


    Original     		1N3595-1, 1N3595US-1 MIL-PRF-19500/241 MIL-PRF-19500/241 MIL-PRF19500/241 1N3595-1US JANTXV 1N3595 equivalent 1n3595-1 1N 457 equivalent 1N3595US JANTX 1N3595 jantx1n3595-1 1N3595-1 JANTX JANS1N3595US melf diode D-5D PDF

    1N3595AUS

    Abstract: 1N3595US JANKCB1N3595 JANTXV 1N3595 equivalent 1N3595-1 1N3595UR-1 1n3595us-1 1N3595A-1 j3595 JS3595A
    Contextual Info: INCH-POUND MIL-PRF-19500/241M 25 January 2010 SUPERSEDING MIL-PRF-19500/241L 10 June 2008 The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 April 2010. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED


    Original     		MIL-PRF-19500/241M MIL-PRF-19500/241L 1N3595-1, 1N3595US, 1N3595UR-1, 1N3595A-1, 1N3595AUS, 1N3595AUR-1, MIL-PRF-19500. 1N3595AUS 1N3595US JANKCB1N3595 JANTXV 1N3595 equivalent 1N3595-1 1N3595UR-1 1n3595us-1 1N3595A-1 j3595 JS3595A PDF

    1N5595

    Abstract: JANKCA1N3595 M4E-1 1N3595US 1N3595 1N3595-1 1N3595UR-1 1N3595US-1 xr111 HP 4066
    Contextual Info: MIL SPECS 44E D • ÜQD0125 QG3M747 03b ■ MILS IINCH POUNDl |The documentation and process | ¡conversion measures necessary to [ |comply with this revision shall be | Icompleted by 23 Hay 1994_[_ MIL-S-19500/241F 23 February 1994 SUPERSEDING


    OCR Scan     		G0DQ125 GG34747 MIL-S-19500/241F MIL-S-19500/241E 1N3595, 1N3595US, 1N3595UR, 1N3595-1, 1N3595UR-1, 1N3595US-1 1N5595 JANKCA1N3595 M4E-1 1N3595US 1N3595 1N3595-1 1N3595UR-1 xr111 HP 4066 PDF

    JANTXV 1N3595 equivalent

    Contextual Info: INCH-POUND MIL-PRF-19500/241N 14 November 2013 SUPERSEDING MIL-PRF-19500/241M 25 January 2010 The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 January 2014. PERFORMANCE SPECIFICATION SHEET *


    Original     		MIL-PRF-19500/241N MIL-PRF-19500/241M 1N3595-1, 1N3595UB, 1N3595UBCA, 1N3595UBD, 1N3595UBCC, 1N3595UB2, 1N3595UB2R, 1N3595US, JANTXV 1N3595 equivalent PDF

    lm 4011

    Abstract: 1N3595US-1 1N3595US diode 1N3595 1N3595US1 JAN 1N3595 1N3595 D-5D 1N3595-1 1N3595UR-1 D0-35
    Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 August 2000. INCH-POUND MIL-PRF-19500/241H 1 May 2000 SUPERSEDING MIL-PRF-19500/241G 7 April 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE


    Original     		MIL-PRF-19500/241H MIL-PRF-19500/241G 1N3595US, 1N3595UR, 1N3595-1, 1N3595UR-1, 1N3595US-1 lm 4011 1N3595US-1 1N3595US diode 1N3595 1N3595US1 JAN 1N3595 1N3595 D-5D 1N3595-1 1N3595UR-1 D0-35 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF